TCS600 [ADPOW]
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 55ST, 2 PIN;
| 型号： | TCS600 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 55ST, 2 PIN 局域网 CD 晶体管 |
| 文件： | 总2页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
R.1.A.992005-HERICK
TCS600
600 Watts, 50 Volts, Pulsed
Avionics 1030 MHz
GENERAL DESCRIPTION
CASE OUTLINE
55ST Style 1
The TCS600 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1030/1090 MHz, with the
pulse width and duty required for TCAS applications. The device has gold thin-
film metallization and diffused ballasting for proven highest MTTF. The
transistor includes input and output prematch for broadband capability. Low
thermal resistance package reduces junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25°C
1458 W
Maximum Voltage and Current
Collector to Base Voltage (BVces)
65 V
3.5 V
40 A
Emitter to Base Voltage (BVebo
Collector Current (Ic)
)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65 to +200 °C
+230 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
F = 1030 MHz
MIN TYP MAX UNITS
Pout
Pin
Pg
Power Out
600
W
W
Power Input
VCC = 50 Volts
PW = 32 µsec
DF = 1%
80
Power Gain
8.7
dB
Collector Efficiency
Pulse Droop
50
ηc
0.5
dB
Pd
VSWR
Load Mismatch Tolerance
F = 1030 MHz
4:1
FUNCTIONAL CHARACTERISTICS @ 25°C
BVebo
BVces
hFE*
*
Emitter to Base Breakdown
Ie = 50 mA
3.5
65
20
V
V
Collector to Emitter Breakdown Ic = 100 mA
DC – Current Gain
Thermal Resistance
Vce = 5V, Ic = 5A
θjc1
°C/W
0.12
NOTE 1: At rated output power and pulse conditions.
*: Not measureable due to internal EB returns.
Initial Issue MAY 1999
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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