MS1491 [ADPOW]
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, M111, 3 PIN;
| 型号： | MS1491 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, M111, 3 PIN 局域网 晶体管 |
| 文件： | 总3页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS1491
RF & MICROWAVE TRANSISTORS
UHF MOBILE APPLICATIONS
Features
·
·
·
·
·
·
470 MHz
12.5 VOLTS
POUT = 45 WATTS
GP = 5.2 dB MINIMUM
GOLD METALIZATION
COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1491 is a 12.5 volt silicon NPN transistor designed
primarily for UHF communications. The device utilizes an
emitter ballasted die geometry capable of operating into an
infinite load VSWR under specified operating conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCBO
Parameter
Value
Unit
V
Collector-Base Voltage
36
VCEO
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
16
4.0
10
V
V
VEBO
IC
A
PTOT
TSTG
TJ
Total Power Dissipation
Storage Temperature
Junction Temperature
175
W
°C
°C
-65 to +200
+200
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance
1.0
°C/W
MSCXXXX.PDF 01-19-99
MS1491
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVCBO
BVCES
BVCEO
BVEBO
ICES
IC = 5 mA
IC = 20 mA
IC = 50 mA
IE = 5 mA
VCE = 22 V
VCE = 5 V
IE = 0 mA
VBE = 0 V
IB = 0 mA
IC = 0 mA
IE = 0 mA
IC = 1 A
36
---
---
V
36
16
4.0
---
---
---
---
---
---
---
---
V
V
---
V
5
mA
---
HFE
20
200
DYNAMIC
Symbol
Test Conditions
Value
Typ.
---
Min.
45
Max.
Unit
POUT
GP
f = 470 MHz
f = 470 MHz
f = 470 MHz
f = 1 MHz
PIN = 15W
PIN = 15W
PIN = 15W
VCE = 12.5V
VCE = 12.5V
VCE = 12.5V
VCE = 12.5V
---
W
5.2
55
---
---
---
---
---
---
dB
%
hC
COB
170
pf
IMPEDANCE DATA
FREQ
ZIN(W)
ZCL(W)
470 MHz
512 MHz
1.5 – j2.8
0.75 – j1.8
1.6 – j2.4
0.8 – j1.1
PIN = 15W
VCE = 12.5V
MSCXXXX.PDF 01-19-99
MS1491
PACKAGE MECHANICAL DATA
MSCXXXX.PDF 01-19-99
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