MMBR951MLT1 [ADPOW]
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC PACKAGE-3;
| 型号： | MMBR951MLT1 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC PACKAGE-3 |
| 文件： | 总1页 (文件大小：337K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBR951MLT1/MRF9511MLT1
RF & MICROWAVE TRANSISTORS
R F P R O D U C T S D I V I S I O N
DESCRIPTION
KEY FEATURES
High FTau-8GHz
!
!
The MMBR951MLT1/MRF9511MLT1 are low noise, high gain, discrete
silicon bipolar transistors housed in low cost plastic packages.
Low noise-1.3dB@1GHz
Low cost SOT23/SOT143
package
IMPORTANT:
For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
APPLICATIONS/BENEFITS
C)
ABSOLUTE MAXIMUM RATINGS (TCASE = 25
Symbol
VCBO
VCEO
VEBO
IC
PDISS
TJ
TSTG
ꢀ
Parameter
ꢀ
Value
20
10
1.5
100
Unit
V
V
!
LNA, Oscillator
, Pre-Driver
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
V
mA
mW
C
322
150
-55 to +150
C
SOT-143
MRF9511MLT1
SOT-23
MMBR951MLT1
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
233
C/W
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
Symbol
Test
Conditions
Units
Min.
20
10
Typ.
Max.
I
I
I
I
I
V
V
uA
BVCBO
BVCEO
IEBO
C = .1mA
C =.1mA
E = 0
B = 0
C = 0
V
V
0.1
200
EB = 1V
CE = 6 V
IC
50
hFE
=
5 mA
DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
Symbol
Test
Conditions
Units
Min.
Typ.
Max.
CCB
F
P
V
CB = 10 V
= 1.0 MHz
f
.45
V
V
V
CE = 6 V
CE = 6 V
CE = 6 V
FTau
NFmin
= 1.0 GHz
= 1.0 GHz
= 1.0 GHz
= 1.0 GHz
GHz
dB
dB
dB
IC= 30 mA
IC= 5 mA
IC= 5 mA
IC= 30 mA
f
f
f
f
8.0
1.3
13.5
13.5
G
NF
2
S
V
CE = 6 V
21
Copyright 2000
CXXXX.PDF 2000-11-06
Microsemi
Page 1 of 1
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
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