概述
数据手册APTGT100X120E3 概述
3 Phase bridge Trench IGBT Power Module 3相桥沟道IGBT功率模块
APTGT100X120E3 数据手册
通过下载APTGT100X120E3数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载APTGT100X120E3
VCES = 1200V
IC = 100A @ Tc = 80°C
3 Phase bridge
Trench IGBT® Power Module
Application
•
Features
•
AC Motor control
Trench + Field Stop IGBT® Technology
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
•
•
•
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
19
17
15
Benefits
•
•
•
•
•
•
•
Stable temperature behavior
Very rugged
20
21
14
13
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
1
2
3
4
5
6
7
8
9
10
11 12
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
140
100
280
±20
480
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 125°C
RBSOA Reverse Bias Operating Area
200A@1100V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 - 3
APT website – http://www.advancedpower.com
APTGT100X120E3
Electrical Characteristics
Symbol Characteristic
All ratings @ Tj = 25°C unless otherwise specified
Test Conditions
Min Typ Max Unit
1200
BVCES Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 5mA
VGE = 0V, VCE = 1200V
V
ICES
Zero Gate Voltage Collector Current
5
mA
Tj = 25°C
Tj = 125°C
VGE = VCE , IC = 4 mA
VGE = 20V, VCE = 0V
1.4
5.0
1.7
2.0
2.1
VGE =15V
IC = 100A
VCE(on) Collector Emitter on Voltage
VGE(th) Gate Threshold Voltage
V
6.5
400
V
nA
IGES
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min Typ Max Unit
Cies
Coes
Cres
Td(on)
Tr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
7200
pF
400
300
260
30
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 100A
RG = 3.9Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 100A
ns
Td(off) Turn-off Delay Time
420
70
Tf
Td(on)
Tr
Fall Time
Turn-on Delay Time
Rise Time
290
45
ns
Td(off) Turn-off Delay Time
520
90
Tf
Fall Time
RG = 3.9Ω
Eoff
Turn off Energy
12
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IF = 100A
VGE = 0V
Tj = 25°C
Tj = 125°C
1.6
1.6
2.1
VF
Er
Diode Forward Voltage
Reverse Recovery Energy
V
IF = 100A
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
5
9
mJ
VR = 600V
di/dt =900A/µs
IF = 100A
VR = 600V
di/dt =900A/µs
10
19
Qrr
Reverse Recovery Charge
µC
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.26
0.48
°C/W
RthJC
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
VISOL
2500
V
TJ
TSTG
TC
Torque
Wt
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
-40
-40
-40
3
150
125
125
4.5
°C
Mounting torque
To Heatsink
M5
N.m
g
Package Weight
300
2 - 3
APT website – http://www.advancedpower.com
APTGT100X120E3
Package outline
PIN 1
PIN 21
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
3 - 3
APT website – http://www.advancedpower.com
APTGT100X120E3 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| APTGT100X120E3G | MICROSEMI | Insulated Gate Bipolar Transistor | 获取价格 |
|
| APTGT100X120TE3 | ADPOW | 3 Phase bridge Trench IGBT Power Module | 获取价格 |
|
| APTGT150A120 | ADPOW | Phase leg Fast Trench + Field Stop IGBT Power Module | 获取价格 |
|
| APTGT150A1202G | MICROSEMI | Insulated Gate Bipolar Transistor | 获取价格 |
|
| APTGT150A120D1 | ADPOW | Phase leg Trench IGBT Power Module | 获取价格 |
|
| APTGT150A120D1G | MICROSEMI | Phase leg Trench + Field Stop IGBT Power Module | 获取价格 |
|
| APTGT150A120D3 | ADPOW | Phase leg Trench IGBT Power Module | 获取价格 |
|
| APTGT150A120D3G | MICROSEMI | Insulated Gate Bipolar Transistor | 获取价格 |
|
| APTGT150A120G | MICROSEMI | Phase leg Fast Trench + Field Stop IGBT Power Module | 获取价格 |
|
| APTGT150A120G-Module | MICROCHIP | Configuration: Phase legVCES (V): 1200VCESat (V): 1.7Current (A) Tc=80C: 150Silicon type: TRENCH 3 IGBT Package: SP6C | 获取价格 |
|
APTGT100X120E3 相关文章
Bourns 密封通孔金属陶瓷微调电位计产品选型手册(英文版)
- 2024-09-20
- 5
Bourns 精密环境传感器产品选型手册(英文版)
- 2024-09-20
- 8
Bourns POWrTher 负温度系数(NTC)热敏电阻手册 (英文版)
- 2024-09-20
- 8
Bourns GMOV 混合过压保护组件产品选型手册(英文版)
- 2024-09-20
- 6
