APT50M85B2VR [ADPOW]

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.; 功率MOS V是新一代高压N沟道增强型功率MOSFET 。
APT50M85B2VR
型号: APT50M85B2VR
厂家: ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述:

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
功率MOS V是新一代高压N沟道增强型功率MOSFET 。

晶体 晶体管 功率场效应晶体管 开关 脉冲 高压 局域网
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APT50M85B2VR_04

POWER MOS V MOSFET

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11 ADPOW

APT50M85B2VRG

Power Field-Effect Transistor, 56A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3

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0 MICROSEMI

APT50M85JVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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23 MICROSEMI

APT50M85JVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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43 ADPOW

APT50M85JVFRE3

Power Field-Effect Transistor, 50A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4

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0 MICROSEMI

APT50M85JVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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57 ADPOW

APT50M85JVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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29 MICROSEMI

APT50M85JVRE3

Power Field-Effect Transistor, 50A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4

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0 MICROSEMI

APT50M85LVFR

POWER MOS V FREDFET

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11 ADPOW

APT50M85LVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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33 ADPOW

APT50M85LVFR

Power Field-Effect Transistor, 56A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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0 ADPOW

APT50M85LVFRG

Power Field-Effect Transistor, 56A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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0 MICROSEMI

APT50M85LVR

POWER MOS V MOSFET

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15 ADPOW

APT50M85LVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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21 ADPOW

APT50M85LVR

Power Field-Effect Transistor, 56A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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0 ADPOW