APT5012 [ADPOW]

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.; 功率MOS V是新一代高压N沟道增强型功率MOSFET 。


型号：	APT5012
厂家：	ADVANCED POWER TECHNOLOGY
描述：	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 功率MOS V是新一代高压N沟道增强型功率MOSFET 。高压
文件：	总4页 (文件大小：65K)
中文：	中文翻译
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APT5012WVR

500V 40A 0.120Ω

POWER MOS V^®

TO-267

Power MOS V^®is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V^®

also achieves faster switching speeds through optimized gate layout.

• Faster Switching

• Lower Leakage

• 100% Avalanche Tested

• New TO-267 Package

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT5012WVR

UNIT

V_DSS

I_D

Drain-Source Voltage

500

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

160

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

±30

±40

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

Watts

450

P_D

3.6

W/°C

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

-55 to 150

300

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

2500

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

500

TYP

MAX

UNIT

BV_DSS

I_D(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

On State Drain Current

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

Amps

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, 0.5 I_D[Cont.])

Ohms

0.120

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

I_DSS

µA

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 2.5mA)

250

±100

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA

405 S.W. Columbia Street

EUROPE

Bend, Oregon 97702-1035

F-33700 Merignac - France

Phone: (541) 382-8028

Phone: (33) 5 57 92 15 15

FAX: (541) 388-0364

FAX: (33) 5 56 47 97 61

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord

DYNAMIC CHARACTERISTICS

Symbol Characteristic

APT5012WVR

Test Conditions

MIN

TYP

MAX

UNIT

C_iss

C_oss

C_rss

Q_g

Input Capacitance

7400

1000

380

312

8900

1400

570

470

V_GS= 0V

V_DS= 25V

f = 1 MHz

Output Capacitance

Reverse Transfer Capacitance

V_GS= 10V

Total Gate Charge

Q_gs

Q_gd

V_DD= 0.5 V_DSS

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

I_D= I_D[Cont.]@ 25°C

127

190

t_d(on)

t_r

t_d(off)

t_f

V_GS= 15V

V_DD= 0.5 V_DSS

I_D= I_D[Cont.]@ 25°C

R_G= 0.6Ω

Turn-off Delay Time

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

I_S

Continuous Source Current (Body Diode)

Amps

I_SM

V_SD

t _rr

Pulsed Source Current

Diode Forward Voltage

(Body Diode)

160

1.3

(V_GS= 0V, I_S= -I_D[Cont.]

)

Volts

Reverse Recovery Time (I_S= -I_D[Cont.], dl_S/dt = 100A/µs)

Reverse Recovery Charge (I_S= -I_D[Cont.], dl_S/dt = 100A/µs)

620

Q _rr

14.7

µC

THERMAL CHARACTERISTICS

Symbol Characteristic

MIN

TYP

MAX

0.28

UNIT

R_θJC

R_θJA

Junction to Case

°C/W

Junction to Ambient

Repetitive Rating: Pulse width limited by maximum junction

temperature.

See MIL-STD-750 Method 3471

Starting T = +25°C, L = 3.13mH, R = 25Ω, Peak I = 40A

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

0.3

D=0.5

0.1

0.05

0.2

0.1

0.05

Note:

0.01

0.02

0.005

0.01

SINGLE PULSE

Duty Factor D =

Peak T = P x Z

+ T

θJC

0.001

10^-5

10^-4

10^-3

10^-2

10^-1

1.0

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

APT5012WVR

100

=7V, 8V, 10V & 15V

=15V

=7V, 8V & 10V

5.5V

4.5V

100

150

200

250

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS

FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

100

1.5

NORMALIZED TO

= -55°C

= 10V

0.5

[Cont.]

= +25°C

1.4

1.3

1.2

1.1

1.0

0.9

= +125°C

> I (ON) x

(ON)MAX.

250µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

=10V

=20V

100

= +125°C

= +25°C

T = -55°C

120

, GATE-TO-SOURCE VOLTAGE (VOLTS)

I , DRAIN CURRENT (AMPERES)

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS

FIGURE 5, R (ON) vs DRAIN CURRENT

1.15

1.10

1.05

1.00

0.95

0.90

100

125

150

-50 -25

25 50 75 100 125 150

T , CASE TEMPERATURE (°C)

T , JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE

FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

1.2

= 0.5 I [Cont.]

= 10V

1.1

1.0

0.9

0.8

0.7

0.6

2.0

1.5

1.0

0.5

0.0

-50 -25

25 50

75 100 125 150

-50 -25

25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

T , CASE TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE

FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

APT5012WVR

200

100

30,000

10µS

OPERATION HERE

LIMITED BY R (ON)

100µS

iss

10,000

5,000

1mS

oss

10mS

rss

1,000

500

100mS

=+25°C

=+150°C

SINGLE PULSE

100

50 100

500

.01

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA

FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

200

= I [Cont.]

100

=100V

=+150°C

T =+25°C

=250V

=400V

100

200

300

400

500

0.4

0.8

1.2

1.6

2.0

Q , TOTAL GATE CHARGE (nC)

, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

TO-267 Package Outline

20.45 (.805)

20.20 (.795)

1.80 (.071)

1.25 (.049)

10.23 (.403)

10.10 (.398)

4.19 (.165)

3.95 (.156)

24.15 (.951)

23.60 (.929)

20.32 (.800)

20.07 (.790)

16.90 (.665)

16.40 (.646)

Drain

Source

Gate

19.05 (.750)

12.70 (.500)

1.65 (.065) Dia. Typ.

1.40 (.055) 3 Leads

4.20 (.165) BSC

7.40 (.291)

6.60 (.260)

5.00 (.197) BSC

Dimensions in Millimeters and (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810

5,256,583

5,045,903

4,748,103

5,089,434

5,283,202

5,182,234

5,231,474

5,019,522

5,434,095

5,262,336

5,528,058

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