APT5010JLC [ADPOW]
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.; 功率MOS VITM是新一代的低栅电荷，高电压N沟道增强模式功率MOSFET。
| 型号： | APT5010JLC |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. |
| 文件： | 总2页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT5010JLC
500V 44A 0.100 W
TM
S
POWER MOS VI
S
Power MOS VITM is a new generation of low gate charge, high voltage
N-Channel enhancement mode power MOSFETs. Lower gate charge is
achievedby optimizingthemanufacturingprocesstominimizeCiss andCrss.
Lower gate charge coupled with Power MOS VITM optimized gate layout,
delivers exceptionally fast switching speeds.
D
G
SOT-227
"UL Recognized"
ISOTOP®
D
• Lower Gate Charge
• Faster Switching
• Lower Input Capacitance
• Easier To Drive
G
• 100% Avalanche Tested
• Popular SOT-227 Package
S
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT5010JLC
UNIT
VDSS
ID
Drain-Source Voltage
500
44
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
176
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
450
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Watts
W/°C
PD
3.6
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
-55 to 150
300
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
44
1
EAR
EAS
50
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
500
44
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms
µA
0.100
25
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
IDSS
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
250
±100
5
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
EUROPE
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT5010JLC
Test Conditions
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
5200
1050
200
150
27
VGS = 0V
VDS = 25V
f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
3
VGS = 10V
Total Gate Charge
Qgs
Qgd
VDD = 0.5 VDSS
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
ns
ID = ID[Cont.] @ 25°C
75
td(on)
tr
td(off)
tf
VGS = 15V
11
V
DD = 0.5 VDSS
12
ID = ID[Cont.] @ 25°C
RG = 0.6W
Turn-off Delay Time
Fall Time
30
6
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
44
UNIT
IS
ISM
VSD
trr
Continuous Source Current (Body Diode)
Amps
1
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
176
1.3
2
(VGS = 0V, IS = -ID[Cont.]
)
Volts
ns
Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
570
Qrr
11.0
µC
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.28
40
UNIT
RqJC
RqJA
Junction to Case
°C/W
Junction to Ambient
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction
temperature.
See MIL-STD-750 Method 3471
Starting T = +25°C, L = 2.58mH, R = 25W, Peak I = 44A
j
G
L
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
SOT-227(ISOTOP®)PackageOutline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030) 12.6 (.496)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Emitter
Collector
30.1 (1.185)
30.3 (1.193)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Emitter
Dimensions in Millimeters and (Inches)
Gate
APT'sdevicesarecoveredbyoneormoreofthefollowingU.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
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