APT45GP120B2DQ2 [ADPOW]

POWER MOS 7 IGBT; 功率MOS 7 IGBT
APT45GP120B2DQ2
型号: APT45GP120B2DQ2
厂家: ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述:

POWER MOS 7 IGBT
功率MOS 7 IGBT

双极性晶体管
文件: 总9页 (文件大小:439K)
下载:  下载PDF数据表文档文件

APT45GP120B2DQ2G

POWER MOS 7 IGBT

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21 ADPOW

APT45GP120B2DQ2G

POWER MOS 7 IGBT

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39 ADPOW

APT45GP120B2DQ2G

Power Semiconductors Power Modules

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15 MICROSEMI

APT45GP120BG

Power Semiconductors Power Modules

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42 MICROSEMI

APT45GP120J

Power Semiconductors Power Modules

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13 MICROSEMI

APT45GP120J

POWER MOS 7 IGBT

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26 ADPOW

APT45GP120J

POWER MOS 7 IGBT

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27 ADPOW

APT45GP120JD2

34A, 1200V, N-CHANNEL IGBT, ISOTOP-4

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0 MICROSEMI

APT45GP120JDF2

Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES

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0 MICROSEMI

APT45GP120JDF2

Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, ISOTOP-4

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0 ADPOW

APT45GP120JDQ2

POWER MOS 7 IGBT

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35 ADPOW

APT45GP120JDQ2

POWER MOS 7 IGBT

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34 ADPOW

APT45GP120JDQ2

Power Semiconductors Power Modules

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3 MICROSEMI

APT45GR65B2DU30

Insulated Gate Bipolar Transistor, 118A I(C), 650V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, T-MAX, TO-247, 3 PIN

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0 MICROSEMI

APT45GR65BSCD10

Insulated Gate Bipolar Transistor, 92A I(C), 650V V(BR)CES, N-Channel,

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0 MICROSEMI