APT35GP120B2DF2 [ADPOW]

Insulated Gate Bipolar Transistor, 96A I(C), 1200V V(BR)CES, N-Channel, B2, TMAX-3;
APT35GP120B2DF2
型号: APT35GP120B2DF2
厂家: ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述:

Insulated Gate Bipolar Transistor, 96A I(C), 1200V V(BR)CES, N-Channel, B2, TMAX-3

文件: 总7页 (文件大小:88K)
下载:  下载PDF数据表文档文件

APT35GP120B2DQ2

POWER MOS 7 IGBT

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13 ADPOW

APT35GP120B2DQ2

POWER MOS 7 IGBT

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25 ADPOW

APT35GP120B2DQ2G

POWER MOS 7 IGBT

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31 ADPOW

APT35GP120B2DQ2G

POWER MOS 7 IGBT

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24 ADPOW

APT35GP120B2DQ2G

Power Semiconductors Power Modules

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9 MICROSEMI

APT35GP120B2DQ2G

Insulated Gate Bipolar Transistor, 96A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, T-MAX, 3 PIN

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0 MICROSEMI

APT35GP120BG

Power Semiconductors Power Modules

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0 MICROSEMI

APT35GP120BG

POWER MOS 7® IGBT

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11 MICROSEMI

APT35GP120J

POWER MOS 7 IGBT

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20 ADPOW

APT35GP120J

Volts:1200V VF/Vce(ON):3.9V ID(cont):29Amps|Ultrafast IGBT Family

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19 ETC

APT35GP120J

POWER MOS 7 IGBT

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11 ADPOW

APT35GP120JD2

Volts:1200V VF/Vce(ON):3.9V ID(cont):29Amps|Ultrafast IGBT Family

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15 ETC

APT35GP120JD2

Insulated Gate Bipolar Transistor, 29A I(C), 1200V V(BR)CES

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0 MICROSEMI

APT35GP120JDF2

Insulated Gate Bipolar Transistor, 64A I(C), 1200V V(BR)CES, N-Channel, ISOTOP-4

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0 ADPOW

APT35GP120JDF2

Insulated Gate Bipolar Transistor, 64A I(C), 1200V V(BR)CES

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0 MICROSEMI