APT10050JN [ADPOW]

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS; N沟道增强型高压功率MOSFET

APT10050JN


型号：	APT10050JN
厂家：	ADVANCED POWER TECHNOLOGY
描述：	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N沟道增强型高压功率MOSFET 晶体晶体管功率场效应晶体管开关脉冲高压局域网高电压电源
文件：	总4页 (文件大小：64K)
下载：	下载PDF数据表文档文件

APT10050JVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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75 ADPOW

APT10050JVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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37 ADPOW

APT10050JVFR

Power Field-Effect Transistor, 19A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4

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1 ADPOW

APT10050JVFR_04

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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22 ADPOW

APT10050JVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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63 ADPOW

APT10050LLC

Power MOS VITM is a new generation of low gate charge, high voltage

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46 ADPOW

APT10050LLC

21A, 1000V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA, TO-264, 3 PIN

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0 MICROSEMI

APT10050LVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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42 ADPOW

APT10050LVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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18 ADPOW

APT10050LVFRG

Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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0 MICROSEMI

APT10050LVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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210 ADPOW

APT10050LVRG

Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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1 MICROSEMI

APT10053LNR

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 20A I(D) | TO-264AA

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285 ETC

APT10057WVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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45 ADPOW

APT10060EN

Transistor

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0 ADPOW

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