HMC815B [ADI]
21 GHz to 27 GHz, GaAs, MMIC, I/Q Upconverter;
| 型号： | HMC815B |
| 厂家： | 
ADI |
| 描述： | 21 GHz to 27 GHz, GaAs, MMIC, I/Q Upconverter |
| 文件： | 总30页 (文件大小：551K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
21 GHz to 27 GHz,
GaAs, MMIC, I/Q Upconverter
Data Sheet
HMC815B
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Conversion gain: 12 dB typical
Sideband rejection: 20 dBc typical
OP1dB compression: 20 dBm typical
OIP3: 27 dBm typical
2× LO to RF isolation: 10 dB typical
2× LO to IF isolation: 15 dB typical
RF return loss: 12 dB typical
LO return loss: 15 dB typical
IF return loss: 15 dB typical
Exposed pad, 4.90 mm × 4.90 mm, 32-terminal, ceramic LCC
NIC
NIC
1
2
3
4
5
6
7
8
24 NIC
23 NIC
22 NIC
21 VDD2
20 NIC
19 NIC
18 VDD3
17 NIC
NIC
NIC
NIC
×2
VDD1
NIC
NIC
APPLICATIONS
PACKAGE
Point to point and point to multipoint radios
Military radars, electronic warfare, and electronic
intelligence
BASE
GND
NIC = NOT INTERNALLY CONNECTED
Figure 1.
Satellite communications
Sensors
GENERAL DESCRIPTION
The HMC815B is a compact gallium arsenide (GaAs),
The HMC815B is a smaller alternative to hybrid style single
sideband (SSB) downconverter assemblies, and it eliminates the
need for wire bonding by allowing the use of surface-mount
manufacturing techniques.
pseudomorphic high electron mobility transistor (pHEMT),
monolithic microwave integrated circuit (MMIC) upconverter
in a RoHS compliant package that operates from 21 GHz to
27 GHz. This device provides a small signal conversion gain of
12 dB and a sideband rejection of 20 dBc. The HMC815B
utilizes a driver amplifier proceeded by an in phase/quadrature
(I/Q) mixer where the LO is driven by an active 2× multiplier.
IF1 and IF2 mixer inputs are provided, and an external 90°
hybrid is needed to select the required sideband. The I/Q mixer
topology reduces the need for filtering of unwanted sideband.
The HMC815B is available in 4.90 mm × 4.90 mm, 32-terminal
ceramic LCC package and operates over the −40°C to +85°C
temperature range. An evaluation board for the HMC815B is
also available upon request.
Rev. 0
Document Feedback
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specificationssubject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
Technical Support
©2018 Analog Devices, Inc. All rights reserved.
www.analog.com
HMC815B
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
IF = 100 MHz, IF Input Power = 0 dBm, Upper Sideband
(Low-Side LO) ............................................................................ 13
Applications....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 4
Thermal Resistance ...................................................................... 4
ESD Caution.................................................................................. 4
Pin Configuration and Function Descriptions............................. 5
Interface Schematics..................................................................... 6
Typical Performance Characteristics ............................................. 7
IF = 2500 MHz, RF Input Power = 0 dBm, Upper Sideband
(Low-Side LO) ............................................................................ 15
IF = 3750 MHz, RF Input Power = 0 dBm, Upper Sideband
(Low-Side LO) ............................................................................ 17
Isolation and Return Loss ......................................................... 19
IF Bandwidth Performance: Lower Sideband (High-Side LO)..22
IF Bandwidth Performance: Upper Sideband (Low-Side LO) ...23
Spurious Performance ............................................................... 24
Theory of Operation ...................................................................... 26
Applications Information.............................................................. 27
Typical Application Circuit....................................................... 27
Evaluation Board Information ................................................. 28
Outline Dimensions....................................................................... 30
Ordering Guide .......................................................................... 30
IF = 2500 MHz, IF Input Power = 0 dBm, Lower Sideband
(High-Side LO) ............................................................................. 7
IF = 100 MHz, IF Input Power = 0 dBm, Lower Sideband
(High-Side LO) ............................................................................. 9
IF = 3750 MHz, IF Input Power = 0 dBm, Lower Sideband
(High-Side LO) ........................................................................... 11
REVISION HISTORY
1/2018—Revision 0: Initial Version
Rev. 0 | Page 2 of 30
Data Sheet
HMC815B
SPECIFICATIONS
TA = 25°C, intermediate frequency (IF) = 2500 MHz, VDD1 = VDD2 = VDD3 = 4.5 V, LO power = 4 dBm, unless otherwise noted.
Measurements performed with lower sideband selected and an external 90° hybrid at the IF ports, unless otherwise noted.
Table 1.
Parameter
Symbol
Min
Typ
Max
Unit
OPERATING CONDITIONS
Frequency Range
Radio Frequency
Local Oscillator
Intermediate Frequency
LO Drive Range
PERFORMANCE
Conversion Gain
Sideband Rejection
Output Power for 1 dB Compression
Output Third-Order Intercept
Isolation
RF
LO
IF
21
27
GHz
GHz
GHz
dBm
10.5
DC
0
14.5
3.75
6
4
7
12
12
20
20
27
dB
dBc
dBm
dBm
OP1dB
OIP3
22.5
4
2× LO to RF
2× LO to IF
10
15
dB
dB
Return Loss
RF
LO
IF
12
15
15
dB
dB
dB
POWER SUPPLY
Total Drain Current
RF Amplifier
IDD2 + IDD3
IDD1
270
80
300
120
mA
mA
LO Amplifier
Rev. 0 | Page 3 of 30
HMC815B
Data Sheet
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
Table 2.
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
Parameter
Rating
Drain Bias Voltage (VDD1, VDD2, VDD3)
Input Power
5.5 V
LO (LOIN)
IF (IF1, IF2)
15 dBm
20 dBm
3 mA
MSL3
θJA is the natural convection junction to ambient thermal
resistance measured in a one cubic foot sealed enclosure. θJC is
the junction to case thermal resistance.
IF Source/Sink Current
Moisture Sensitivity Level (MSL) Rating1
Maximum Junction Temperature
Storage Temperature Range
Operating Temperature Range
Reflow Temperature
Electrostatic Discharge Sensitivity
Human Body Model (HBM)
Field Induced Charged Device Model
(FICDM)
Table 3. Thermal Resistance
175°C
Package Type
E-32-11
θJA
θJC
Unit
−65°C to +150°C
−40°C to +85°C
260°C
46.4
46.7
°C/W
1 Thermal impedance simulated values are based on JEDEC 2S2P test board
with 5 × 5 thermal vias. A cold plate is attached to the bottom side of the
PCB using 100 µm tin (3.56 W/mK). Refer to JEDEC standard JESD51-2 for
additional information.
250 V
1250 V
1 See the Ordering Guide section.
ESD CAUTION
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Rev. 0 | Page 4 of 30
Data Sheet
HMC815B
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
NIC
NIC
NIC
1
2
3
4
5
6
7
8
24 NIC
23 NIC
22 NIC
HMC815B
TOP VIEW
(Not to Scale)
VDD2
21
NIC
NIC
VDD1
NIC
20 NIC
NIC
19
18 VDD3
NIC
17
NIC
PACKAGE
BASE
GND
NOTES
1. NIC = NOT INTERNALLY CONNECTED. THESE PINS ARE NOT CONNECTED INTERNALLY.
HOWEVER, THESE PINS CAN BE CONNECTED TO RF/DC GROUND WITHOUT
AFFECTING PERFORMANCE.
2. EXPOSED PAD. CONNECT THE EXPOSED PAD TO A LOW IMPEDANCE
THERMAL AND ELECTRICAL GROUND PLANE.
Figure 2. Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic
Description
1 to 5, 7, 8, 11, 16, 17, 19, NIC
20, 22 to 28
Not Internally Connected. These pins are not connected internally. However, these pins can be
connected to RF/dc ground without affecting performance.
6
VDD1
Power Supply Voltage for the LO Amplifier. See Figure 3 for the interface schematic. Refer to the
typical application circuit (see Figure 104) for the required external components.
9
LOIN
GND
Local Oscillator Input. See Figure 4 for the interface schematic. This pin is ac-coupled and
matched to 50 Ω.
Ground Connect. See Figure 5 for the interface schematic. These pins and the exposed pad must
be connected to RF/dc ground.
10, 13, 15, 30, 32
12
VGG
Gate Voltage for the RF Amplifier. See Figure 6 for the interface schematic. Refer to the typical
application circuit (see Figure 104) for the required external components.
14
RFOUT
Radio Frequency Output. See Figure 7 for the interface schematic. This pin is ac-coupled and
matched to 50 Ω.
18, 21
VDD3, VDD2 Power Supply Voltage for the RF Amplifier. See Figure 8 for the interface schematic. Refer to the
typical application circuit (see Figure 104) for the required external components.
29, 31
IF1, IF2
Quadrature Intermediate Frequency Inputs. See Figure 9 for the interface schematic. For
applications not requiring operation to dc, use an off chip dc blocking capacitor. For operation
to dc, these pins must not source or sink more than 3 mA of current or device malfunction and
failure can result.
EPAD
Exposed Pad. Connect the exposed pad to a low impedance thermal and electrical ground
plane.
Rev. 0 | Page 5 of 30
HMC815B
Data Sheet
INTERFACE SCHEMATICS
VDD1
RFOUT
Figure 3. VDD1 Interface
Figure 7. RFOUT Interface
VDD3, VDD2
LOIN
Figure 8. VDD3, VDD2 Interface
Figure 4. LOIN Interface
IF1, IF2
GND
Figure 5. GND Interface
Figure 9. IF1, IF2 Interface
VGG
Figure 6. VGG Interface
Rev. 0 | Page 6 of 30
Data Sheet
HMC815B
TYPICAL PERFORMANCE CHARACTERISTICS
IF = 2500 MHz, IF INPUT POWER = 0 dBm, LOWER SIDEBAND (HIGH-SIDE LO)
20
18
16
14
12
10
8
40
35
30
25
20
15
10
5
6
4
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
2
0
20
0
20
21
22
23
24
25
26
27
28
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 10. Conversion Gain vs. RF Frequency over Temperature,
LO Power = 4 dBm
Figure 13. Sideband Rejection vs. RF Frequency over Temperature,
LO Power = 4 dBm
20
18
16
14
12
10
8
40
35
30
25
20
15
6
10
5
0dBm
2dBm
4dBm
6dBm
0dBm
2dBm
4dBm
6dBm
4
2
0
0
20
21
22
23
24
25
26
27
28
20
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 11. Conversion Gain vs. RF Frequency over LO Powers, TA = 25°C
Figure 14. Sideband Rejection vs. RF Frequency over LO Powers, TA = 25°C
20
18
16
14
12
10
8
40
35
30
25
20
15
6
10
4.25V
4.50V
4.75V
4.25V
4.50V
4.75V
4
2
0
5
0
20
20
21
22
23
24
25
26
27
28
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 12. Conversion Gain vs. RF Frequency over VDD1,
LO Power = 4 dBm, TA = 25°C
Figure 15. Sideband Rejection vs. RF Frequency over VDD1,
LO Power = 4 dBm, TA = 25°C
Rev. 0 | Page 7 of 30
HMC815B
Data Sheet
42
38
34
30
26
22
18
14
10
26
24
22
20
18
16
14
12
10
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
20
21
22
23
24
25
26
27
28
20
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 16. Output IP3 vs. RF Frequency over Temperature,
LO Power = 4 dBm
Figure 19. Output P1dB vs. RF Frequency over Temperature,
LO Power = 4 dBm
42
26
24
22
20
18
16
38
34
30
26
22
18
14
10
14
0dBm
2dBm
4dBm
6dBm
0dBm
2dBm
4dBm
6dBm
12
10
20
20
21
22
23
24
25
26
27
28
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 17. Output IP3 vs. RF Frequency over LO Powers, TA = 25°C
Figure 20. Output P1dB vs. RF Frequency over LO Powers, TA = 25°C
42
38
34
30
26
22
26
24
22
20
18
16
14
18
4.25V
4.25V
4.50V
4.75V
4.50V
4.75V
14
10
12
10
20
21
22
23
24
25
26
27
28
20
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 18. Output IP3 vs. RF Frequency over VDD1, TA = 25°C
Figure 21. Output P1dB vs. RF Frequency over VDD1, TA = 25°C
Rev. 0 | Page 8 of 30
Data Sheet
HMC815B
IF = 100 MHz, IF INPUT POWER = 0 dBm, LOWER SIDEBAND (HIGH-SIDE LO)
20
18
16
14
12
10
8
40
35
30
25
20
15
10
5
6
4
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
2
0
20
0
20
21
22
23
24
25
26
27
28
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 22. Conversion Gain vs. RF Frequency over Temperature,
LO Power = 4 dBm
Figure 25. Sideband Rejection vs. RF Frequency over Temperature,
LO Power = 4 dBm
20
18
16
14
12
10
8
40
35
30
25
20
15
6
10
5
0dBm
2dBm
4dBm
6dBm
0dBm
2dBm
4dBm
6dBm
4
2
0
0
20
21
22
23
24
25
26
27
28
20
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 23. Conversion Gain vs. RF Frequency over LO Powers, TA = 25°C
Figure 26. Sideband Rejection vs. RF Frequency over LO Powers, TA = 25°C
20
18
16
14
12
10
8
40
35
30
25
20
15
6
10
4.25V
4.50V
4.75V
4.25V
4.50V
4.75V
4
2
0
5
0
20
20
21
22
23
24
25
26
27
28
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 24. Conversion Gain vs. RF Frequency over VDD1,
LO Power = 4 dBm, TA = 25°C
Figure 27. Sideband Rejection vs. RF Frequency over VDD1,
LO Power = 4 dBm, TA = 25°C
Rev. 0 | Page 9 of 30
HMC815B
Data Sheet
42
38
34
30
26
22
18
14
10
26
24
22
20
18
16
14
12
10
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
20
21
22
23
24
25
26
27
28
20
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 28. Output IP3 vs. RF Frequency over Temperature,
LO Power = 4 dBm
Figure 31. Output P1dB vs. RF Frequency over Temperature,
LO Power = 4 dBm
42
26
24
22
20
18
16
38
34
30
26
22
18
14
10
14
0dBm
2dBm
4dBm
6dBm
0dBm
2dBm
4dBm
6dBm
12
10
20
20
21
22
23
24
25
26
27
28
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 29. Output IP3 vs. RF Frequency over LO Powers, TA = 25°C
Figure 32. Output P1dB vs. RF Frequency over LO Powers, TA = 25°C
42
38
34
30
26
22
26
24
22
20
18
16
14
18
4.25V
4.25V
4.50V
4.75V
4.50V
4.75V
14
10
12
10
20
21
22
23
24
25
26
27
28
20
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 30. Output IP3 vs. RF Frequency over VDD1, LO Power = 4 dBm,
TA = 25°C
Figure 33. Output P1dB vs. RF Frequency over VDD1, LO Power = 4 dBm,
TA = 25°C
Rev. 0 | Page 10 of 30
Data Sheet
HMC815B
IF = 3750 MHz, IF INPUT POWER = 0 dBm, LOWER SIDEBAND (HIGH-SIDE LO)
20
18
16
14
12
10
8
40
35
30
25
20
15
10
5
6
4
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
2
0
20
0
20
21
22
23
24
25
26
27
21
22
23
24
25
26
27
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 34. Conversion Gain vs. RF Frequency over Temperature,
LO Power = 4 dBm
Figure 37. Sideband Rejection vs. RF Frequency over Temperature,
LO Power = 4 dBm
20
18
16
14
12
10
8
40
35
30
25
20
15
6
10
5
0dBm
2dBm
4dBm
6dBm
0dBm
2dBm
4dBm
6dBm
4
2
0
0
20
21
22
23
24
25
26
27
20
21
22
23
24
25
26
27
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 35. Conversion Gain vs. RF Frequency over LO Powers, TA = 25°C
Figure 38. Sideband Rejection vs. RF Frequency over LO Powers, TA = 25°C
20
18
16
14
12
10
8
40
35
30
25
20
15
6
10
4.25V
4.50V
4.75V
4.25V
4.50V
4.75V
4
2
0
5
0
20
20
21
22
23
24
25
26
27
21
22
23
24
25
26
27
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 36. Conversion Gain vs. RF Frequency over VDD1,
LO Power = 4 dBm, TA = 25°C
Figure 39. Sideband Rejection vs. RF Frequency over VDD1,
LO Power = 4 dBm, TA = 25°C
Rev. 0 | Page 11 of 30
HMC815B
Data Sheet
42
38
34
30
26
22
18
14
26
24
22
20
18
16
14
12
10
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
10
20
21
22
23
24
25
26
27
20
21
22
23
24
25
26
27
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 40. Output IP3 vs. RF Frequency over Temperature,
LO Power = 4 dBm
Figure 43. Output P1dB vs. RF Frequency over Temperature,
LO Power = 4 dBm
42
26
24
22
20
18
16
38
34
30
26
22
18
14
10
14
0dBm
2dBm
4dBm
6dBm
0dBm
2dBm
4dBm
6dBm
12
10
20
20
21
22
23
24
25
26
27
21
22
23
24
25
26
27
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 41. Output IP3 vs. RF Frequency over LO Powers, TA = 25°C
Figure 44. Output P1dB vs. RF Frequency over LO Powers, TA = 25°C
42
38
34
30
26
22
26
24
22
20
18
16
18
14
4.25V
4.25V
4.50V
4.75V
4.50V
14
10
12
4.75V
10
20
20
21
22
23
24
25
26
27
21
22
23
24
25
26
27
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 42. Output IP3 vs. RF Frequency over VDD1, LO Power = 4 dBm,
TA = 25°C
Figure 45. Output P1dB vs. RF Frequency over VDD1, LO Power = 4 dBm,
TA = 25°C
Rev. 0 | Page 12 of 30
Data Sheet
HMC815B
IF = 100 MHz, IF INPUT POWER = 0 dBm, UPPER SIDEBAND (LOW-SIDE LO)
20
18
16
14
12
10
8
50
45
40
35
30
25
20
15
10
5
6
4
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
2
0
21
0
21
22
23
24
25
26
27
28
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 46. Conversion Gain vs. RF Frequency over Temperature,
LO Power = 4 dBm
Figure 49. Sideband Rejection vs. RF Frequency over Temperature,
LO Power = 4 dBm
20
18
16
14
12
10
8
50
45
40
35
30
25
20
6
15
0dBm
0dBm
4
2
0
10
5
2dBm
4dBm
6dBm
2dBm
4dBm
6dBm
0
21
21
22
23
24
25
26
27
28
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 47. Conversion Gain vs. RF Frequency over LO Powers, TA = 25°C
Figure 50. Sideband Rejection vs. RF Frequency over LO Powers, TA = 25°C
20
18
16
14
12
10
8
50
45
40
35
30
25
20
15
6
4.25V
4.50V
4.75V
4.25V
4.50V
4.75V
4
2
0
10
5
0
21
22
23
24
25
26
27
28
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 48. Conversion Gain vs. RF Frequency over VDD1,
LO Power = 4 dBm, TA = 25°C
Figure 51. Sideband Rejection vs. RF Frequency over VDD1,
LO Power = 4 dBm, TA = 25°C
Rev. 0 | Page 13 of 30
HMC815B
Data Sheet
26
24
22
20
18
16
14
12
10
42
38
34
30
26
22
18
14
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
10
21
22
23
24
25
26
27
28
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 52. Output IP3 vs. RF Frequency over Temperature,
LO Power = 4 dBm
Figure 55. Output P1dB vs. RF Frequency over Temperature,
LO Power = 4 dBm
42
26
24
22
20
18
16
38
34
30
26
22
18
14
10
0dBm
2dBm
4dBm
6dBm
14
12
10
0dBm
2dBm
4dBm
6dBm
21
22
23
24
25
26
27
28
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 53. Output IP3 vs. RF Frequency over LO Powers, TA = 25°C
Figure 56. Output P1dB vs. RF Frequency over LO Powers, TA = 25°C
42
38
34
30
26
22
26
24
22
20
18
16
18
14
4.25V
4.25V
4.50V
4.75V
4.50V
14
10
12
4.75V
10
21
22
23
24
25
26
27
28
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 54. Output IP3 vs. RF Frequency over VDD1,
LO Power = 4 dBm, TA = 25°C
Figure 57. Output P1dB vs. RF Frequency over VDD1,
LO Power = 4 dBm, TA = 25°C
Rev. 0 | Page 14 of 30
Data Sheet
HMC815B
IF = 2500 MHz, RF INPUT POWER = 0 dBm, UPPER SIDEBAND (LOW-SIDE LO)
20
18
16
14
12
10
8
50
45
40
35
30
25
20
15
10
5
6
+85°C
+25°C
–40°C
4
+85°C
+25°C
–40°C
2
0
21
0
21
22
23
24
25
26
27
28
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 58. Conversion Gain vs. RF Frequency over Temperature,
LO Power = 4 dBm
Figure 61. Sideband Rejection vs. RF Frequency over Temperature,
LO Power = 4 dBm
20
18
16
14
12
10
8
50
45
40
35
30
25
20
6
15
0dBm
0dBm
4
2
0
10
5
2dBm
4dBm
6dBm
2dBm
4dBm
6dBm
0
21
21
22
23
24
25
26
27
28
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 59. Conversion Gain vs. RF Frequency over LO Powers, TA = 25°C
Figure 62. Sideband Rejection vs. RF Frequency over LO Powers, TA = 25°C
20
18
16
14
12
10
8
50
45
40
35
30
25
20
15
6
4.25V
4.50V
4.75V
4.25V
4.50V
4.75V
4
2
0
10
5
0
21
22
23
24
25
26
27
28
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 60. Conversion Gain vs. RF Frequency over VDD1,
LO Power = 4 dBm, TA = 25°C
Figure 63. Sideband Rejection vs. RF Frequency over VDD1,
LO Power = 4 dBm, TA = 25°C
Rev. 0 | Page 15 of 30
HMC815B
Data Sheet
42
38
34
30
26
22
18
14
10
26
24
22
20
18
16
14
12
10
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
21
22
23
24
25
26
27
28
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 64. Output IP3 vs. RF Frequency over Temperature,
LO Power = 4 dBm
Figure 67. Output P1dB vs. RF Frequency over Temperature,
LO Power = 4 dBm
42
26
24
22
20
18
16
38
34
30
26
22
18
14
10
14
0dBm
2dBm
4dBm
6dBm
0dBm
2dBm
4dBm
6dBm
12
10
21
21
22
23
24
25
26
27
28
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 65. Output IP3 vs. RF Frequency over LO Powers, TA = 25°C
Figure 68. Output P1dB vs. RF Frequency over LO Powers, TA = 25°C
42
38
34
30
26
22
26
24
22
20
18
16
14
18
4.25V
4.25V
4.50V
4.75V
4.50V
4.75V
14
10
12
10
21
22
23
24
25
26
27
28
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 66. Output IP3 vs. RF Frequency over VDD1,
LO Power = 4 dBm, TA = 25°C
Figure 69. Output P1dB vs. RF Frequency over VDD1,
LO Power = 4 dBm, TA = 25°C
Rev. 0 | Page 16 of 30
Data Sheet
HMC815B
IF = 3750 MHz, RF INPUT POWER = 0 dBm, UPPER SIDEBAND (LOW-SIDE LO)
20
18
16
14
12
10
8
50
45
40
35
30
25
20
15
10
5
6
+85°C
+25°C
–40°C
4
+85°C
+25°C
–40°C
2
0
21
0
21
22
23
24
25
26
27
28
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 70. Conversion Gain vs. RF Frequency over Temperature,
LO Power = 4 dBm
Figure 73. Sideband Rejection vs. RF Frequency over Temperature,
LO Power = 4 dBm
20
18
16
14
12
10
8
50
45
40
35
30
25
20
6
15
0dBm
0dBm
4
2
0
10
5
2dBm
4dBm
6dBm
2dBm
4dBm
6dBm
0
21
21
22
23
24
25
26
27
28
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 71. Conversion Gain vs. RF Frequency over LO Powers, TA = 25°C
Figure 74. Sideband Rejection vs. RF Frequency over LO Powers, TA = 25°C
20
18
16
14
12
10
8
50
45
40
35
30
25
20
15
6
4.25V
4.50V
4.75V
4.25V
4.50V
4.75V
4
2
0
10
5
0
21
22
23
24
25
26
27
28
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 72. Conversion Gain vs. RF Frequency over VDD1,
LO Power = 4 dBm, TA = 25°C
Figure 75. Sideband Rejection vs. RF Frequency over VDD1,
LO Power = 4 dBm, TA = 25°C
Rev. 0 | Page 17 of 30
HMC815B
Data Sheet
42
38
34
30
26
22
18
14
26
24
22
20
18
16
14
12
10
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
10
21
22
23
24
25
26
27
28
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 76. Output IP3 vs. RF Frequency over Temperature,
LO Power = 4 dBm
Figure 79. Output P1dB vs. RF Frequency over Temperature,
LO Power = 4 dBm
42
26
24
22
20
18
16
38
34
30
26
22
18
14
10
14
0dBm
2dBm
4dBm
6dBm
0dBm
2dBm
4dBm
6dBm
12
10
21
22
23
24
25
26
27
28
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 77. Output IP3 vs. RF Frequency over LO Powers, TA = 25°C
Figure 80. Output P1dB vs. RF Frequency over LO Powers, TA = 25°C
42
38
34
30
26
22
26
24
22
20
18
16
14
18
4.25V
4.25V
4.50V
4.75V
4.50V
4.75V
14
10
12
10
21
22
23
24
25
26
27
28
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 78. Output IP3 vs. RF Frequency over VDD1, LO Power = 4 dBm,
TA = 25°C
Figure 81. Output P1dB vs. RF Frequency over VDD1, LO Power = 4 dBm,
TA = 25°C
Rev. 0 | Page 18 of 30
Data Sheet
HMC815B
ISOLATION AND RETURN LOSS
50
70
60
50
40
30
20
10
0
+85°C, IF1
+25°C, IF1
–40°C, IF1
+85°C, IF2
+25°C, IF2
–40°C, IF2
45
40
35
30
25
20
15
10
5
0dBm, IF1
2dBm, IF1
4dBm, IF1
6dBm, IF1
0dBm, IF2
2dBm, IF2
4dBm, IF2
6dBm, IF2
0
19
20
21
22
23
24
25
26
27
28
29
30
9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0
2× LO FREQUENCY (GHz)
1× LO FREQUENCY (GHz)
Figure 82. 2× LO to IF Isolation vs. 2× LO Frequency over Temperature,
LO Power = 4 dBm
Figure 85. 1× LO to IF Isolation vs. 1× LO Frequency over LO Powers,
TA = 25°C
60
30
25
20
15
10
0dBm, IF1
2dBm, IF1
4dBm, IF1
6dBm, IF1
0dBm, IF2
2dBm, IF2
50
40
4dBm, IF2
6dBm, IF2
30
20
10
0
+85°C
+25°C
–40°C
5
0
19
20
21
22
23
24
25
26
27
28
29
30
19
20
21
22
23
24
25
26
27
28
29
30
2× LO FREQUENCY (GHz)
2× LO FREQUENCY (GHz)
Figure 83. 2× LO to IF Isolation vs. 2× LO Frequency over LO Powers,
TA = 25°C
Figure 86. 2× LO to RF Isolation vs. 2× LO Frequency over Temperature,
LO Power = 4 dBm
70
60
50
40
30
25
20
15
30
+85°C, IF1
10
0dBm
+25°C, IF1
–40°C, IF1
+85°C, IF2
+25°C, IF2
–40°C, IF2
20
10
0
2dBm
4dBm
6dBm
5
0
19
9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0
20
21
22
23
24
25
26
27
28
29
30
1× LO FREQUENCY (GHz)
2× LO FREQUENCY (GHz)
Figure 84. 1× LO to IF Isolation vs. 1× LO Frequency over Temperature,
LO Power = 4 dBm
Figure 87. 2× LO to RF Isolation vs. 2× LO Frequency over LO Powers,
TA = 25°C
Rev. 0 | Page 19 of 30
HMC815B
Data Sheet
60
55
50
45
40
35
30
25
20
0
–5
–10
–15
–20
–25
–30
–35
–40
+85°C
+25°C
–40°C
0dBm
2dBm
4dBm
6dBm
9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0
5
6
7
8
9
10
11
12
13
14
15
1× LO FREQUENCY (GHz)
LO FREQUENCY (GHz)
Figure 88. 1× LO to RF Isolation vs. 1× LO Frequency over Temperature,
LO Power = 4 dBm
Figure 91. LO Return Loss vs. LO Frequency over LO Powers,
TA = 25°C
60
55
50
45
40
0
–5
–10
–15
–20
–25
–30
–35
–40
35
0dBm
2dBm
4dBm
6dBm
30
+85°C
+25°C
–40°C
25
20
9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0
20
21
22
23
24
25
26
27
28
1× LO FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 89. 1× LO to RF Isolation vs. 1× LO Frequency over LO Powers,
TA = 25°C
Figure 92. RF Return Loss vs. RF Frequency over Temperature,
LO Frequency = 12 GHz, LO Power = 4 dBm
0
–5
0
–5
–10
–15
–20
–25
–30
–10
–15
–20
–25
–30
–35
–40
0dBm
2dBm
4dBm
6dBm
+85°C
+25°C
–40°C
–35
–40
5
6
7
8
9
10
11
12
13
14
15
20
21
22
23
24
25
26
27
28
LO FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 90. LO Return Loss vs. LO Frequency over Temperature,
LO Power = 4 dBm
Figure 93. RF Return Loss vs. RF Frequency over LO Powers,
LO Frequency = 12 GHz, TA = 25°C
Rev. 0 | Page 20 of 30
Data Sheet
HMC815B
0
0
–5
–5
–10
–15
–20
–25
–30
–35
–40
–10
–15
–20
–25
–30
–35
–40
0dBm, IF1
2dBm, IF1
4dBm, IF1
6dBm, IF1
0dBm, IF2
2dBm, IF2
4dBm, IF2
6dBm, IF2
+85°C, IF1
+25°C, IF1
–40°C, IF1
+85°C, IF2
+25°C, IF2
–40°C, IF2
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IF FREQUENCY (GHz)
IF FREQUENCY (GHz)
Figure 94. IF Return Loss vs. IF Frequency over Temperature,
LO Frequency = 12 GHz, LO Power = 4 dBm
Figure 95. IF Return Loss vs. IF Frequency over LO Powers,
LO Frequency = 12 GHz, TA = 25°C
Rev. 0 | Page 21 of 30
HMC815B
Data Sheet
IF BANDWIDTH PERFORMANCE: LOWER SIDEBAND (HIGH-SIDE LO)
20
18
16
14
12
10
8
42
38
34
30
26
22
18
14
0
6
4
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
2
0
0.2
0.7
1.2
1.7
2.2
2.7
3.2
3.7
4.2
0.2
0.7
1.2
1.7
2.2
2.7
3.2
3.7
4.2
IF FREQUENCY (GHz)
IF FREQUENCY (GHz)
Figure 96. Conversion Gain vs. IF Frequency over Temperature,
LO Frequency = 12 GHz, LO Power = 4 dBm
Figure 98. Output IP3 vs. IF Frequency over Temperature,
LO Frequency = 12 GHz, LO Power = 4 dBm
20
18
16
14
12
10
8
42
38
34
30
26
22
18
14
0
0dBm
2dBm
4dBm
6dBm
6
4
2
0
0dBm
2dBm
4dBm
6dBm
0.2
0.7
1.2
1.7
2.2
2.7
3.2
3.7
4.2
0.2
0.7
1.2
1.7
2.2
2.7
3.2
3.7
4.2
IF FREQUENCY (GHz)
IF FREQUENCY (GHz)
Figure 97. Conversion Gain vs. IF Frequency over LO Powers,
LO Frequency = 12 GHz, TA = 25°C
Figure 99. Output IP3 vs. IF Frequency over LO Powers,
LO Frequency = 24 GHz, TA = 25°C
Rev. 0 | Page 22 of 30
Data Sheet
HMC815B
IF BANDWIDTH PERFORMANCE: UPPER SIDEBAND (LOW-SIDE LO)
20
18
16
14
12
10
8
42
38
34
30
26
22
18
14
0
6
4
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
2
0
0.2
0.7
1.2
1.7
2.2
2.7
3.2
3.7
4.2
0.2
0.7
1.2
1.7
2.2
2.7
3.2
3.7
4.2
IF FREQUENCY (GHz)
IF FREQUENCY (GHz)
Figure 100. Conversion Gain vs. IF Frequency over Temperature,
LO Frequency = 12 GHz, LO Power = 4 dBm
Figure 102. Output IP3 vs. IF Frequency over LO Powers,
LO Frequency = 12 GHz, TA = 25°C
20
18
16
14
12
10
8
45
40
35
30
25
20
15
10
0dBm
2dBm
4dBm
6dBm
6
4
2
0
0dBm
2dBm
4dBm
6dBm
0.2
0.7
1.2
1.7
2.2
2.7
3.2
3.7
4.2
0.2
0.7
1.2
1.7
2.2
2.7
3.2
3.7
4.2
IF FREQUENCY (GHz)
IF FREQUENCY (GHz)
Figure 101. Conversion Gain vs. IF Frequency over Temperature,
LO Frequency = 12 GHz, LO Power = 4 dBm
Figure 103. Output IP3 vs. IF Frequency over LO Powers,
LO Frequency = 12 GHz, TA = 25°C
Rev. 0 | Page 23 of 30
HMC815B
Data Sheet
RF = 24 GHz, LO frequency = 13.25 GHz at LO input power =
4 dBm, IF input power = −10 dBm.
SPURIOUS PERFORMANCE
M × N Spurious Outputs, IF = 2500 MHz
N × LO
Mixer spurious products are measured in dBc from the RF
output power level with lower sideband selected and without
external 90° hybrid at the IF ports. N/A means not applicable.
0
1
2
3
98
63
91
N/A
91
63
97
104
86
70
0
56
46
0
77
−3
−2
−1
0
61
RF = 21 GHz, LO frequency = 11.75 GHz at LO input power =
4 dBm, IF input power = −10 dBm.
48
4
N/A
N/A
N/A
N/A
M × IF
N × LO
36
57
80
N/A
54
55
+1
+2
+3
0
1
2
3
88
62
76
N/A
76
63
89
104
92
67
34
44
57
79
58
49
0
75
75
41
19
42
N/A
N/A
−3
−2
−1
0
8
RF = 25 GHz, LO frequency = 13.75 GHz at LO input power =
4 dBm, IF input power = −10 dBm.
M × IF
N/A
59
52
+1
+2
+3
N × LO
0
1
2
3
85
63
73
N/A
73
63
75
101
87
65
26
36
56
67
49
37
0
73
−3
−2
−1
0
54
RF = 22 GHz, LO frequency = 12.25 GHz at LO input power =
4 dBm, IF input power = −10 dBm.
48
0
N/A
N/A
N/A
N/A
M × IF
N × LO
N/A
39
57
+1
+2
+3
0
1
2
3
87
62
75
N/A
75
62
76
100
91
67
33
43
60
78
58
43
0
86
61
44
18
49
N/A
N/A
−3
−2
−1
0
4
RF = 26 GHz, LO frequency = 14.25 GHz at LO input power =
4 dBm, IF input power = −10 dBm.
M × IF
N/A
45
50
+1
+2
+3
N × LO
0
1
2
3
+85
+63
+74
N/A
+74
+63
+74
+96
+80
+62
+20
+26
+59
+56
+49
+44
0
+61
+56
+213
N/A
N/A
N/A
N/A
−3
−2
−1
0
RF = 23 GHz, LO frequency = 12.75 GHz at LO input power =
4 dBm, IF input power = −10 dBm.
−2
M × IF
N × LO
N/A
+35
+62
+1
+2
+3
0
1
2
3
−3
−2
−1
0
88
61
79
N/A
78
61
88
101
97
76
34
47
67
79
62
43
0
83
62
57
RF = 27 GHz, LO frequency = 14.75 GHz at LO input power =
4 dBm, IF input power = −10 dBm.
M × IF
3
29
+1
+2
+3
N/A
51
48
N/A
N/A
N/A
N × LO
0
1
2
3
82
62
70
N/A
70
62
73
95
77
50
26
22
34
51
46
39
0
N/A
54
−3
−2
−1
0
N/A
N/A
N/A
N/A
N/A
1
M × IF
N/A
51
48
+1
+2
+3
Rev. 0 | Page 24 of 30
Data Sheet
HMC815B
M × N Spurious Outputs, IF = 2500 MHz
RF = 25.5 GHz, LO frequency = 11.5 GHz at LO input power =
4 dBm, IF input power = −10 dBm.
Mixer spurious products are measured in dBc from the RF
output power level with upper sideband selected and without
external 90° hybrid at the IF ports. N/A means not applicable.
N × LO
0
1
2
3
90
60
74
N/A
74
60
90
109
91
69
0
60
42
N/A
9
82
54
39
18
39
68
N/A
−3
−2
−1
0
RF = 24 GHz, LO frequency = 10.75 GHz at LO input power =
4 dBm, IF input power = −10 dBm.
N × LO
M × IF
0
1
2
3
41
50
81
0
+1
+2
+3
95
60
79
N/A
79
61
93
108
83
69
39
40
49
68
65
52
N/A
14
0
61
47
29
17
27
53
71
−3
−2
−1
0
42
52
M × IF
+1
+2
+3
RF = 26 GHz, LO frequency = 11.75 GHz at LO input power =
4 dBm, IF input power = −10 dBm.
49
53
N × LO
0
1
2
3
85
60
72
N/A
72
60
86
105
94
65
33
42
60
75
58
48
N/A
7
75
56
43
18
35
58
N/A
M × IF
−3
−2
−1
0
RF = 24.5 GHz, LO frequency = 11 GHz at LO input power =
4 dBm, IF input power = −10 dBm.
N × LO
0
1
2
3
0
+1
+2
+3
82
60
77
N/A
77
60
94
107
84
69
37
39
47
72
64
47
N/A
11
0
65
44
30
18
30
52
N/A
−3
−2
−1
0
45
51
M × IF
+1
+2
+3
RF = 26.5 GHz, LO frequency = 12 GHz at LO input power =
4 dBm, IF input power = −10 dBm.
50
52
N × LO
0
1
2
3
84
60
70
N/A
70
59
83
106
98
64
32
47
74
75
52
46
N/A
6
75
57
47
18
54
N/A
N/A
−3
−2
−1
0
RF = 25 GHz, LO frequency = 11.25 GHz at LO input power =
4 dBm, IF input power = −10 dBm.
N × LO
M × IF
0
1
2
3
0
+1
+2
+3
84
60
76
N/A
76
60
97
109
89
70
38
41
51
70
62
57
N/A
11
0
63
52
33
19
35
58
N/A
−3
−2
−1
0
47
51
M × IF
+1
+2
+3
RF = 27 GHz, LO frequency = 12.25 GHz at LO input power =
4 dBm, IF input power = −10 dBm
47
51
N × LO
0
1
2
3
82
59
69
N/A
69
59
82
103
100
65
33
58
73
76
52
37
N/A
5
N/A
56
−3
−2
−1
0
46
19
M × IF
0
51
+1
+2
+3
47
51
N/A
N/A
Rev. 0 | Page 25 of 30
HMC815B
Data Sheet
THEORY OF OPERATION
The HMC815B is a GaAs, pHEMT, MMIC I/Q upconverter
with an integrated LO buffer that upconverts IF between dc and
3.75 GHz to RF between 21 GHz and 27 GHz. LO buffer
amplifiers are included on chip to allow an LO drive range from
0 dBm to 6 dBm for full performance. The LO path feeds a
quadrature splitter followed by on-chip baluns that drive the
I and Q singly balanced cores of the passive mixers. The RF
output of the I and Q mixers are then summed through an
on-chip Wilkinson power combiner and relatively matched to
provide a single-ended, 50 Ω output signal that is amplified by
the RF amplifiers to produce a dc-coupled and 50 Ω matched
RF output signal at the RFOUT port.
Rev. 0 | Page 26 of 30
Data Sheet
HMC815B
APPLICATIONS INFORMATION
LO suppression is <3 mA for each IF port to prevent damage to
the device. The common-mode voltage for each IF port is 0 V.
TYPICAL APPLICATION CIRCUIT
Figure 104 shows the typical application circuit for the
To select the upper sideband, connect the IF1 pin to the 90°
port of the hybrid and the IF2 pin to the 0° port of the hybrid.
To select the lower sideband, connect the IF1 pin to the 0° port
of the hybrid and the IF2 pin to the 90° port of the hybrid.
HMC815B. To select the appropriate sideband, an external 90°
hybrid is required. For applications not requiring operation to
dc, use an off chip, dc blocking capacitor. For applications that
require the LO signal at the output to be suppressed, use a bias
tee or RF feed. Ensure that the source or sink current used for
IF1 J3
IF IN
IF2 J4
90° HYBRID
COUPLER
1
2
3
4
24
23
22
VDD2
J11
21
20
19
18
17
C11
2.2µF
C7
C3
5
1000pF
100pF
×2
HMC815B
VDD1
J5
6
7
8
+
VDD3
C8
2.2µF
C5
1000pF
C1
100pF
J10
C10
C6
1000pF
C2
100pF
2.2µF
PACKAGE
BASE
LOIN
J1
GND
VGG
RFOUT
J2
J7
+
C9
2.2µF
C4
1000pF
Figure 104. Typical Application Circuit
Rev. 0 | Page 27 of 30
HMC815B
Data Sheet
Layout
EVALUATION BOARD INFORMATION
Solder the exposed pad on the underside of the HMC815B to a low
thermal and electrical impedance ground plane. This exposed
pad is typically soldered to an exposed opening in the solder
mask on the evaluation board. Connect these ground vias to all
other ground layers on the evaluation board to maximize heat
dissipation from the device package. Figure 105 and Figure 106
show the PCB land pattern footprint for the HMC815B and the
solder paste stencil for the HMC815B evaluation board,
respectively.
The circuit board used in the application must use RF circuit
design techniques. Signal lines must have 50 Ω impedance.
Connect the package ground leads and exposed pad directly to
the ground plane, as shown in Figure 105. Use a sufficient
number of via holes to connect the top and bottom ground
planes. The evaluation circuit board shown in Figure 107 is
available from Analog Devices upon request.
EV1HMC815BLC5 Power-On Sequence
To set up the EV1HMC815BLC5, take the following steps:
0.217" SQUARE
0.004" MASK/METAL OVERLAP
SOLDERMASK
0.010" MIN MASK WIDTH
1. Power up VGG with a −2 V supply.
2. Power up VDD2 and VDD3 with a 4.5 V supply.
3. Power up VDD1 with another 4.5 V supply.
4. Adjust the VGG supply between −2 V and 0 V until the total
RF supply current (IDD2 + IDD3) = 270 mA.
GROUND PAD
PAD SIZE
0.026" × 0.010"
PIN 1
0.197"
[0.50]
5. Connect LOIN to the LO signal generator with an LO
power of 4 dBm (typical).
0.156"
MASK
OPENING
6. Apply the IF1 and IF2 signals.
ø.034"
TYPICAL
VIA SPACING
EV1HMC815BLC5 Power-Off Sequence
To turn off the EV1HMC815BLC5, take the following steps:
ø.010"
TYPICAL VIA
1. Turn off the LO and IF signals.
2. Set VGG to −2 V.
3. Set the VDD1, VDD2, and VDD3 supplies to 0 V and then
0.010" REF
0.138" SQUARE MASK OPENING
0.02 ×45° CHAMFER FOR PIN1
0.030"
MASK OPENING
0.146" SQUARE
GROUND PAD
turn them off.
Figure 105. PCB Land Pattern Footprint
4. Turn off the VGG supply.
0.017
0.0197
TYP
0.219
SQUARE
0.132
SQUARE
0.017
0.027
TYP
R0.0040 TYP
132 PLCS
0.010
TYP
Figure 106. Solder Paste Stencil
Rev. 0 | Page 28 of 30
Data Sheet
HMC815B
Figure 107. HMC815B Evaluation Board Top Layer
Table 5. Bill of Materials for the EV1HMC815BLC5 Evaluation Board PCB
Reference
Quantity Designator
Description
Manufacturer
Part Number
1
1
4
Not applicable PCB, EV1HMC815BLC5
Analog Devices supplied
Analog Devices
Southwest Microwave, Inc.
120410
HMC815B
1092-01A
HMC815B
J1, J2
Mixer, 21 GHz to 27 GHz upconverter
Connector, end launch, 2.92 mm, 40 GHz,
jack
2
8
3
J3, J4
Johnson Subminiature Version A (SMA)
connectors
DC pin, PCB terminal
Cinch Connectivity Solutions
Johnson
Mill-Max Manufacturing
Corporation
142-0701-851
J5 to J12
C1, C2, C3,
3101-2-00-21-00-00-08-0
C0402C101J5GACTU
Ceramic capacitors, 100 pF, 5%, 50 V, C0G,
0402
Kemet
1
3
C4
C5, C6, C7
Ceramic capacitors, 1000 pF, 50 V, X7R, 0402
Ceramic capacitors, 1000 pF, 50 V, 10%, X7R,
0603
Murata Manufacturing
Murata Manufacturing
GRM155R71H102KA01D
GRM188R71H102KA01D
4
C8, C9, C10,
C11
Tantalum capacitors, 2.2 μF, 25 V, 10%, SMD,
Case A
AVX Corporation
TAJA225K025RNJ
Rev. 0 | Page 29 of 30
HMC815B
Data Sheet
OUTLINE DIMENSIONS
5.05
4.90 SQ
4.75
0.36
0.30
0.24
PIN 1
0.08
REF
INDICATOR
PIN 1
32
25
24
1
0.50
BSC
3.60
3.50 SQ
3.40
EXPOSED
PAD
17
8
16
9
0.38
0.32
0.26
0.20 MIN
BOTTOM VIEW
3.50 REF
TOP VIEW
SIDE VIEW
1.10
1.00
0.90
4.10 REF
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
SEATING
PLANE
SECTION OF THIS DATA SHEET.
Figure 108. 32-Terminal Ceramic Leadless Chip Carrier [LCC]
(E-32-1)
Dimensions shown in millimeters
ORDERING GUIDE
Temperature
Range
Package Body
Material
MSL
Package
Description
Package
Option
Model1
Lead Finish
Rating2
MSL3
HMC815BLC5
HMC815BLC5TR
HMC815BLC5TR-R5
EV1HMC815BLC5
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
Alumina Ceramic
Alumina Ceramic
Alumina Ceramic
Gold over Nickel
Gold over Nickel
Gold over Nickel
32-Terminal LCC
32-Terminal LCC
32-Terminal LCC
Evaluation PCB
Assembly
E-32-1
E-32-1
E-32-1
MSL3
MSL3
1 The HMC815BLC5, HMC815BLC5TR, and the HMC815BLC5TR-R5 are RoHS compliant parts.
2 See the Absolute Maximum Ratings section.
©2018 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D13597-0-1/18(0)
Rev. 0 | Page 30 of 30
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