HMC349AMS8GTR [ADI]
High Isolation, Nonreflective, GaAs, SPDT Switch,100 MHz to 4 GHz;
| 型号： | HMC349AMS8GTR |
| 厂家： | 
ADI |
| 描述： | High Isolation, Nonreflective, GaAs, SPDT Switch,100 MHz to 4 GHz 光电二极管 |
| 文件： | 总10页 (文件大小：750K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Isolation, Nonreflective,
GaAs, SPDT Switch,100 MHz to 4 GHz
HMC349AMS8G
Data Sheet
FEATURES
FUNCTIONAL BLOCK DIAGRAM
RF2
Nonreflective, 50 Ω design
HMC349AMS8G
High isolation: 57 dB to 2 GHz
Low insertion loss: 0.9 dB to 2 GHz
High input linearity
VDD
50Ω
EN
RFC
1 dB power compression (P1dB): 34 dBm typical
Third-order intercept (IP3): 52 dBm typical
High power handling
CTRL
50Ω
GND
33.5 dBm through path
26.5 dBm terminated path
RF1
Single positive supply: 3 V to 5 V
CMOS-/TTL-compatible control
All off state control
Figure 1.
8-lead mini small outline package with exposed pad
(MINI_SO_EP)
APPLICATIONS
Cellular/4G infrastructure
Wireless infrastructure
Mobile radios
Test equipment
GENERAL DESCRIPTION
The HMC349AMS8G is a gallium arsenide (GaAs), pseudo-
The HMC349AMS8G operates with a single positive supply
morphic high electron mobility transistor (PHEMT), single-pole,
double throw (SPDT) switch specified from 100 MHz to 4 GHz.
voltage from 3 V to 5 V and provides a CMOS-/TTL-compatible
control interface.
The HMC349AMS8G is well suited for cellular infrastructure
applications by yielding high isolation of 57 dB, low insertion
loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB
of 34 dBm.
The HMC349AMS8G comes in an 8-lead mini small outline
package with an exposed pad.
Rev. F
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registeredtrademarks arethe property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
Technical Support
©2019 Analog Devices, Inc. All rights reserved.
www.analog.com
HMC349AMS8G
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Typical Performance Characteristics ..............................................6
Insertion Loss, Return Loss, and Isolation ................................6
Input Power Compression and Third-Order Intercept (IP3).......7
Theory of Operation .........................................................................8
Applications Information.................................................................9
Evaluation Board...........................................................................9
Outline Dimensions....................................................................... 10
Ordering Guide .......................................................................... 10
Applications....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 4
ESD Caution.................................................................................. 4
Pin Configuration and Function Descriptions............................. 5
Interface Schematics..................................................................... 5
REVISION HISTORY
10/2019—Rev. E to Rev. F
12/2016—Rev. B to Rev. C
Changes to Table 1............................................................................ 3
Updated Outline Dimensions....................................................... 10
Changes to Ordering Guide .......................................................... 10
Change to Frequency Range Parameter, Table 1...........................3
This Hittite Microwave Products data sheet has been reformatted
to meet the styles and standards of Analog Devices, Inc.
10/2016—v01.0214 to Rev. B
8/2019—Rev. D to Rev. E
Updated Outline Dimensions....................................................... 10
Changes to Ordering Guide .......................................................... 10
Changes to Features Section ............................................................1
Changes to Table 2.............................................................................4
Changes to Theory of Operation Section.......................................8
Updated Outline Dimensions....................................................... 10
Changes to Ordering Guide.......................................................... 10
8/2018—Rev. C to Rev. D
Changed Reflow (MSL1 Rating) to Reflow, Table 2 .................... 4
Deleted Note 2, Table 2; Renumbered Sequentially..................... 4
Changes to Ordering Guide .......................................................... 10
Rev. F | Page 2 of 10
Data Sheet
HMC349AMS8G
SPECIFICATIONS
VDD = 3 V to 5 V, VCTRL = 0 V or VDD, VEN = 0 V, TCASE = 25°C, 50 Ω system, unless otherwise noted.
Table 1.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
FREQUENCY RANGE
INSERTION LOSS
0.1
4
GHz
Between RFC and RF1/RF2
0.1 GHz to 1 GHz
0.1 GHz to 2 GHz
0.1 GHz to 3 GHz
0.1 GHz to 4 GHz
0.8
0.9
1.2
1.8
1.1
1.2
1.5
2.1
dB
dB
dB
dB
ISOLATION
Between RFC and RF1/RF2
0.1 GHz to 1 GHz
0.1 GHz to 2 GHz
0.1 GHz to 3 GHz
0.1 GHz to 4 GHz
0.1 GHz to 1 GHz
0.1 GHz to 2 GHz
0.1 GHz to 3 GHz
0.1 GHz to 4 GHz
60
54
45
42
70
57
50
45
55
46
43
38
dB
dB
dB
dB
dB
dB
dB
dB
Between RF1 and RF2
RETURN LOSS
RFC
0.1 GHz to 1 GHz
0.1 GHz to 2 GHz
0.1 GHz to 3 GHz
0.1 GHz to 4 GHz
21
18
16
14
dB
dB
dB
dB
RF1/RF2
On
0.1 GHz to 1 GHz
0.1 GHz to 2 GHz
0.1 GHz to 3 GHz
0.1 GHz to 4 GHz
0.5 GHz to 1 GHz
0.5 GHz to 2 GHz
0.5 GHz to 3 GHz
0.5 GHz to 4 GHz
22
20
19
19
23
18
15
13
dB
dB
dB
dB
dB
dB
dB
dB
Off
SWITCHING
Rise and Fall Time
On and Off Time
tRISE, tFALL
tON, tOFF
10% to 90% of radio frequency (RF) output
50% VCTRL to 90% of RF output
60
160
ns
ns
INPUT LINEARITY1
0.1 dB Power Compression
250 MHz to 4 GHz
VDD = 3 V
VDD = 5 V
VDD = 3 V
P0.1dB
P1dB
IP3
25
31
28
34
dBm
dBm
dBm
dBm
1 dB Power Compression
Third-Order Intercept
VDD = 5 V
30
3
Input power = 10 dBm/tone, Δf = 1 MHz
VDD = 3 V
VDD = 5 V
VDD pin
54
52
dBm
dBm
SUPPLY
Voltage
Current
VDD
IDD
5
3.5
V
mA
1.2
DIGITAL CONTROL INPUTS
Low Voltage
High Voltage
Low Current
High Current
CTRL pin and EN pin
VINL
VINH
IINL
0
2
0.8
VDD
V
V
μA
μA
<1
40
IINH
1 Input linearity performance degrades at frequencies less than 250 MHz. See Figure 12 to Figure 17.
Rev. F | Page 3 of 10
HMC349AMS8G
Data Sheet
ABSOLUTE MAXIMUM RATINGS
Stresses at or above those listed under Absolute Maximum
Table 2.
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the
operational section of this specification is not implied.
Operation beyond the maximum operating conditions for
extended periods may affect product reliability.
Parameter
Rating
Supply Voltage
+7 V
Digital Control Input Voltage
RF Input Power (f = 250 MHz to 4 GHz)1
Through Path
−1 V to VDD + 1 V
VDD = 3 V, TCASE = 85°C
VDD = 3 V, TCASE = 125°C
VDD = 5 V, TCASE = 85°C
VDD = 5 V, TCASE = 125°C
Terminated Path
31.5 dBm
26 dBm
33.5 dBm
28 dBm
Only one absolute maximum rating can be applied at any one time.
2
0
–2
VDD = 3 V to 5 V, TCASE = 85°C
VDD = 3 V to 5 V, TCASE = 125°C
Hot Switching
26.5 dBm
21 dBm
–4
VDD = 3 V to 5 V, TCASE = 85°C
VDD = 3 V to 5 V, TCASE = 125°C
Temperature
30 dBm
24.5 dBm
–6
Junction Temperature (TJ)
150°C
−40°C to +125°C
−65°C to +150°C
–8
Case Temperature Range (TCASE
Storage Temperature Range
Reflow
)
–10
0.01
0.1
1
FREQUENCY (GHz)
HMC349AMS8G
HMC349AMS8GE
235°C
260°C
Figure 2. Power Derating at Frequencies Less Than 250 MHz
Junction to Case Thermal Resistance (θJC)
Through Path
ESD CAUTION
67.1°C/W
Terminated Path
144.2°C/W
ESD Sensitivity
Human Body Model (HBM)
250 V (Class 1A)
1 For power derating at frequencies less than 250 MHz, see Figure 2.
Rev. F | Page 4 of 10
Data Sheet
HMC349AMS8G
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
VDD
CTRL
RFC
EN
1
2
3
4
8
7
6
5
RF2
GND
GND
RF1
HMC349AMS8G
TOP VIEW
(Not to Scale)
NOTES
1. THE EXPOSED PAD MUST BE
CONNECTED TO THE RF/DC GROUND OF
THE PRINTED CIRCUIT BOARD (PCB).
Figure 3. Pin Configuration (Top View)
Table 3. Pin Function Descriptions
Pin No.
Mnemonic
Description
1
2
3
VDD
CTRL
RFC
Supply Voltage.
Logic Control Input. See Table 4.
RF Common Port. This pin is dc-coupled and matched to 50 Ω. An external dc blocking capacitor is required
on this pin.
4
5
EN
RF1
Logic Enable Input. See Table 4.
RF Throw Port 1. This pin is dc-coupled and matched to 50 Ω. An external dc blocking capacitor is required
on this pin.
6, 7
8
GND
RF2
Ground. These pins must be connected to the RF/dc ground of the printed circuit board (PCB).
RF Throw Port 2. This pin is dc-coupled and matched to 50 Ω. An external dc blocking capacitor is required
on this pin.
EPAD
Exposed Pad. The exposed pad must be connected to the RF/dc ground of the PCB.
INTERFACE SCHEMATICS
VDD
RFC,
RF1,
RF2
CTRL, EN
Figure 4. RFC, RF1, and RF2 Pins Interface Schematic
Figure 5. Digital Pins (CTRL and EN) Interface Schematic
Rev. F | Page 5 of 10
HMC349AMS8G
Data Sheet
TYPICAL PERFORMANCE CHARACTERISTICS
INSERTION LOSS, RETURN LOSS, AND ISOLATION
0
0
–5
RFC
RF1/RF2 ON
RF1/RF2 OFF
T
T
T
T
T
= +125°C
= +105°C
= +85°C
= +25°C
= –40°C
CASE
CASE
CASE
CASE
CASE
–0.5
–1.0
–1.5
–2.0
–2.5
–3.0
–10
–15
–20
–25
–30
–35
–40
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 6. Insertion Loss Between RFC and RF1/RF2 vs. Frequency
over Temperature
Figure 9. Return Loss for RFC, RF1/RF2 On, and RF1/RF2 Off vs. Frequency
0
0
T
T
T
T
T
= +125°C
= +105°C
= +85°C
= +25°C
= –40°C
T
T
T
T
T
= +125°C
= +105°C
= +85°C
= +25°C
= –40°C
CASE
CASE
CASE
CASE
CASE
CASE
CASE
CASE
CASE
CASE
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 10. Isolation Between RF1 and RF2 vs. Frequency over
Temperature
Figure 7. Isolation Between RFC and RF1/RF2 vs. Frequency
over Temperature
0
0
T
T
T
T
T
= +125°C
= +105°C
= +85°C
= +25°C
= –40°C
T
T
T
T
T
= +125°C
= +105°C
= +85°C
= +25°C
= –40°C
CASE
CASE
CASE
CASE
CASE
CASE
CASE
CASE
CASE
CASE
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 11. Isolation Between RF1 and RF2 in an All Off State (EN = VDD) vs.
Frequency over Temperature
Figure 8. Isolation Between RFC and RF1/RF2 in an All Off State (EN = VDD) vs.
Frequency over Temperature
Rev. F | Page 6 of 10
Data Sheet
HMC349AMS8G
INPUT POWER COMPRESSION AND THIRD-ORDER INTERCEPT (IP3)
40
38
36
34
32
30
28
26
24
22
20
36
34
32
30
28
26
24
22
20
18
16
T
T
T
= +85°C
= +25°C
= –40°C
CASE
CASE
CASE
T
T
T
= +85°C
= +25°C
= –40°C
CASE
CASE
CASE
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 12. Input 0.1 dB Power Compression (P0.1dB) vs. Frequency over
Temperature, VDD = 5 V
Figure 15. Input 0.1 dB Power Compression (P0.1dB) vs.
Frequency over Temperature, VDD = 3 V
36
34
32
30
28
26
24
22
20
36
34
32
30
28
26
24
22
20
18
16
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
CASE
CASE
CASE
CASE
CASE
CASE
18
16
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 13. Input 1 dB Power Compression (P1dB) vs. Frequency over
Temperature, VDD = 5 V
Figure 16. Input 1 dB Power Compression (P1dB) vs.
Frequency over Temperature, VDD = 3 V
60
55
50
45
40
35
60
55
50
45
40
35
30
T
T
T
= +85°C
= +25°C
= –40°C
T
T
T
= +85°C
= +25°C
= –40°C
CASE
CASE
CASE
CASE
CASE
CASE
30
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 14. Input IP3 vs. Frequency over Temperature, VDD = 5 V
Figure 17. Input IP3 vs. Frequency over Temperature, VDD = 3 V
Rev. F | Page 7 of 10
HMC349AMS8G
Data Sheet
THEORY OF OPERATION
The HMC349AMS8G requires a positive supply voltage applied
to the VDD pin. Bypassing capacitors are recommended on the
supply lines to minimize RF coupling.
The isolation path (for example, RF2 to RFC) provides high
loss between the insertion loss path and the throw port (for
example, RF2) terminated to an internal 50 ꢀ resistor.
The HMC349AMS8G is internally matched to 50 Ω at the RF
common port (RFC) and the RF throw ports (RF1 and RF2);
therefore, no external matching components are required. All
of the RF ports are dc-coupled and dc blocking capacitors are
required at the RF ports. The design is bidirectional; the RF
input signal can be applied to the RFC port while the RF throw
port (RF1 or RF2) is output, or vice versa.
When the EN pin is logic high, both the RF1 to RFC path and
the RF2 to RFC path are in an isolation state, regardless of the
logic state of CTRL. The RF1 and RF2 ports are terminated to
internal 50 ꢀ resistors, and RFC becomes open reflective.
The ideal power-up sequence is as follows:
1. Connect GND.
2. Power up VDD.
The HMC349AMS8G incorporates a driver to perform logic
functions internally and to provide the user with the advantage
of a simplified control interface. The driver features two digital
control input pins, CTRL and EN.
3. Power up the digital control inputs. The relative order of
the logic control inputs is not important. However, powering
the digital control inputs before the VDD supply can
inadvertently forward bias and damage the internal ESD
protection structures.
4. Apply an RF input signal. The design is bidirectional; the
RF input signal can be applied to the RFC port while the
RF throw ports are outputs, or vice versa. All of the RF
ports are dc-coupled to VDD through internal resistors;
therefore, dc blocking capacitors are required at the RF ports.
When the EN pin is logic low, the RF1 to RFC path is in an
insertion loss state, and the RF2 to RFC path is in an isolation
state, or vice versa, depending on the logic level applied to the
CTRL pin. The insertion loss path (for example, RF1 to RFC)
conducts the RF signal equally well in both directions between
the throw port (for example, RF1) and the common port (RFC).
Table 4. Control Voltage Truth Table
Digital Control Input
RF Paths
EN
CTRL
Low
High
Low
RF1 to RFC
RF2 to RFC
Low
Low
High
High
Isolation (off)
Insertion loss (on)
Isolation (off)
Isolation (off)
Insertion loss (on)
Isolation (off)
Isolation (off)
Isolation (off)
High
Rev. F | Page 8 of 10
Data Sheet
HMC349AMS8G
APPLICATIONS INFORMATION
EVALUATION BOARD
The HMC349AMS8G uses a 4-layer evaluation board. The
copper thickness is 0.5 oz (0.7 mil) on each layer. The top
dielectric material is 10 mil Rogers RO4350, which offers good
high frequency performance, whereas the middle and bottom
dielectric materials are FR-4 type materials to achieve an overall
board thickness of 62 mil. All RF and dc traces are routed on
the top copper layer, whereas the inner and bottom layers are
grounded planes that provide a solid ground for the RF
transmission lines. The RF transmission lines are designed
using a coplanar waveguide (CPWG) model with a width of
16 mil and ground spacing of 13 mil to have a characteristic
impedance of 50 Ω. For good RF and thermal grounding, as
many plated through vias as possible are arranged around
transmission lines and under the exposed pad of the package.
Figure 18 shows the top view of populated HMC349AMS8G
evaluation board, available from Analog Devices, Inc., upon
request (see the Ordering Guide). The package ground pins are
connected directly to the ground plane, which is connected to
the GND test points (TP1 and TP5). A single power supply port
is connected to the dc test point labeled VDD (TP2). An unpopu-
lated bypass capacitor position is available to filter high frequency
noise on the supply trace. Two control ports are connected to
the CTRL and EN test points (TP3 and TP4). The RF ports are
connected to the RFC, RF1, and RF2 connectors (J1, J3, and J2)
that are PC mount SMA RF connectors. Additionally, 100 pF dc
blocking capacitors (C1, C2, C3) are used on RF transmission
lines. A through transmission line that connects unpopulated
RF connectors (J4 and J5) is also available to measure and remove
the loss of the PCB.
Figure 18. Populated Evaluation Board
Figure 19 and Table 5 are the evaluation board schematic and
bill of materials, respectively.
GND
TP1
TP5
TP2
VDD
GND
C4
DEPOP
U1
TP3
HMC349AMS8G
C2
J2
J3
100pF
RF2
CTRL
1
2
3
4
VDD
CTRL
RFC
EN
RF2
GND
GND
RF1
8
7
6
5
C1
100pF
J1
RFC
C3
100pF
RF1
EN
TP4
C5
DEPOP
C6
DEPOP
THRU
J4
DEPOP
J5
DEPOP
Figure 19. Evaluation Board Schematic
Table 5. Bill of Materials, Evaluation Board Components
Component
J1, J2, J3
J4, J5
TP1 to TP5
C1, C2, C3
C4, C5, C6
U1
Description
PC mount SMA connectors
Unpopulated PC mount SMA connectors
Through hole mount test points
100 pF capacitors, 0402 package
Unpopulated capacitors, 0402 package
HMC349AMS8G SPDT switch
107660-1 evaluation PCB
PCB
Rev. F | Page 9 of 10
HMC349AMS8G
Data Sheet
OUTLINE DIMENSIONS
3.10
3.00
2.90
2.26
2.16
2.06
8
1
5
4
5.05
4.90
4.75
1.83
1.73
1.63
3.10
3.00
2.90
EXPOSED
PAD
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
TOP VIEW
BOTTOM VIEW
0.65
BSC
SECTION OF THIS DATA SHEET.
1.95 BSC
0.94
0.86
0.78
1.10
MAX
0.25 GAGE
SIDE VIEW
END VIEW
PLANE
0.23
0.08
6°
0°
0.13
MAX
0.40
0.33
0.25
0.70
0.55
0.40
0.95
REF
COPLANARITY
0.10
COMPLIANT TO JEDEC STANDARDS MO-187-AA-T
Figure 20. 8-Lead Mini Small Outline Package with Exposed Pad [MINI_SO_EP]
(RH-8-1)
Dimensions shown in millimeters
ORDERING GUIDE
Model1
Temperature Range
Package Description
Package Option
RH-8-1
RH-8-1
RH-8-1
RH-8-1
HMC349AMS8G
HMC349AMS8GTR
HMC349AMS8GE
HMC349AMS8GETR
EV1HMC349AMS8G
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
8-Lead Mini Small Outline Package with Exposed Pad [MINI_SO_EP]
8-Lead Mini Small Outline Package with Exposed Pad [MINI_SO_EP]
8-Lead Mini Small Outline Package with Exposed Pad [MINI_SO_EP]
8-Lead Mini Small Outline Package with Exposed Pad [MINI_SO_EP]
Evaluation Board
1 The HMC349AMS8GE, HMC349AMS8GETR, and EV1HMC349AMS8G are RoHS compliant parts.
©2019 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D15025-0-10/19(F)
Rev. F | Page 10 of 10
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SI9137DB
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