HMC347B-SX [ADI]
GaAs, SPDT Switch, Nonreflective, 0.1 GHz to 20 GHz;
| 型号： | HMC347B-SX |
| 厂家： | 
ADI |
| 描述： | GaAs, SPDT Switch, Nonreflective, 0.1 GHz to 20 GHz 光电二极管 |
| 文件： | 总10页 (文件大小：208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GaAs, SPDT Switch, Nonreflective,
0.1 GHz to 20 GHz
Data Sheet
HMC347B
FEATURES
FUNCTIONAL BLOCK DIAGRAM
RFC
Broadband frequency range: 0.1 GHz to 20 GHz
Nonreflective, 50 Ω design
Low insertion loss: 1.7 dB typical to 20 GHz
High isolation: 46 dB typical to 20 GHz
High input linearity
CTRLA
CTRLB
CTRLB
CTRLA
3
2
4
5
6
Input P1dB: 25 dBm typical
Input IP3: 41 dBm typical
RF2
RF1
1
7
50Ω
50Ω
High power handling
10
9
8
27 dBm through path
25 dBm terminated path
CTRLA CTRLB CTRLA
Figure 1.
10-pad, 1.3 mm × 0.85 mm × 0.102 mm CHIP
APPLICATIONS
Test instrumentations
Microwave radios and very small aperture terminals (VSATs)
Military radios, radars, electronic counter measure (ECMs)
Broadband telecommunications systems
GENERAL DESCRIPTION
The HMC347B is a broadband, nonreflective gallium arsenide
(GaAs), pseudomorphic high electron mobility transistor
(pHEMT) SPDT monolithic microwave integrated circuit
(MMIC) chip. The switch operates from 0.1 GHz to 20 GHz
with an insertion loss of 1.7 dB and an isolation of 46 dB to
20 GHz due to the implementation of on-chip, via hole structures.
The switch operates with two negative control voltage inputs
(VCTL = −5 V or 0 V), requires no supply, and has no current
consumption. All electrical performance data is acquired with
the RFx pads of the HMC347B connected to 50 Ω transmission
lines via one 3.0 mil × 0.5 mil ribbon of minimal length.
Rev. E
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Devices. Trademarks and registeredtrademarks are theproperty oftheir respective owners.
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Tel: 781.329.4700
Technical Support
©2020 Analog Devices, Inc. All rights reserved.
www.analog.com
HMC347B
Data Sheet
TABLE OF CONTENTS
Features.............................................................................................. 1
Typical Performance Characteristics .............................................6
Insertion Loss, Return Loss, and Isolation ................................6
Input P1dB, Input P0.1dB, and Input IP3.................................7
Theory of Operation .........................................................................8
Applications Information ................................................................9
Mounting and Bonding Techniques ..........................................9
Assembly Diagram........................................................................9
Outline Dimensions....................................................................... 10
Ordering Guide .......................................................................... 10
Applications ...................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description......................................................................... 1
Revision History ............................................................................... 2
Specifications .................................................................................... 3
Absolute Maximum Ratings ........................................................... 4
Thermal Resistance...................................................................... 4
ESD Caution.................................................................................. 4
Pin Configuration and Function Descriptions ............................ 5
Interface Schematics .................................................................... 5
REVISION HISTORY
4/2020—Rev. D to Rev. E
Changes to Ordering Guide.......................................................... 10
Deleted Handling Precautions Section, Mounting Section, and
Wire Bonding Section.......................................................................6
Added Figure 7 .................................................................................6
Changes to Figure 5, Figure 6, and Figure 8..................................6
Added Figure 9 and Figure 12 to Figure 14...................................7
Changes to Figure 10 and Figure 11...............................................7
Added Theory of Operation Section ..............................................8
Added Applications Information Section and Assembly
Diagram Section ................................................................................9
Changed Mounting & Bonding Techniques for Millimeterwave
GaAs MMICs Section to Mounting and Bonding Techniques
Section.................................................................................................9
Changes to Figure 15 and Figure 16...............................................9
Updated Outline Dimensions ...................................................... 10
Changes to Ordering Guide.......................................................... 10
This Hittite Microwave Products data sheet has been reformatted
to meet the styles and standards of Analog Devices, Inc.
3/2020—Rev. 03.0518 to Rev. D
Updated Format ................................................................ Universal
Changes to Features Section and General Description Section ...... 1
Changes to Table 1 ........................................................................... 3
Deleted Control Voltages Table ..................................................... 3
Changes to Table 2 ........................................................................... 4
Deleted Suggested Drive Circuit Figure and GND Interface
Schematic Figure .............................................................................. 4
Added Figure 2 and Figure 3; Renumbered Sequentially........... 5
Changes to Table 4 and Figure 4.................................................... 5
Rev. E | Page 2 of 10
Data Sheet
HMC347B
SPECIFICATIONS
Control voltage (VCTL) = −5 V or 0 V, die temperature (TDIE) = 25°C, 50 Ω system, unless otherwise noted.
Table 1.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
GHz
dB
BROADBAND FREQUENCY RANGE
INSERTION LOSS
f
0.1
20
0.1 GHz to 10 GHz
0.1 GHz to 20 GHz
1.6
1.7
2.2
dB
ISOLATION
Between RFC and RF1 to RF2
0.1 GHz to 10 GHz
0.1 GHz to 20 GHz
0.1 GHz to 20 GHz
52
46
dB
dB
40
RETURN LOSS
RFC
12
dB
RF1 and RF2
On State
Off State
16
18
dB
dB
SWITCHING CHARACTERISTICS
Rise and Fall Time
On and Off Time
INPUT LINEARITY
Input 1 dB Compression
tRISE, tFALL
tON, tOFF
10% to 90% of RF output
50% VCTL to 90% of RF output
0.5 GHz to 20 GHz
VCTL = −5 V or 0 V
VCTL = −3 V or 0 V
VCTL = −5 V or 0 V
VCTL = −3 V or 0 V
10 dBm per tone, 1 MHz spacing
VCTL = −5 V or 0 V
VCTL = −3 V or 0 V
3
10
ns
ns
P1dB
P0.1dB
IP3
23
25
24
21
19
dBm
dBm
dBm
dBm
Input 0.1 dB Compression
Input Third-Order Intercept
41
41
dBm
dBm
DIGITAL CONTROL INPUTS
Voltage
Low
High
VINL
VINH
−0.2
−5
0
−3
V
V
Current
Low
High
IINL
IINH
VCTL = 0 V
VCTL = −5 V to −3 V
3
10
µA
µA
Rev. E | Page 3 of 10
HMC347B
Data Sheet
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
Table 2.
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
Parameter
Rating
VCTL
−7.5 V dc to +0.5 V
RF Input Power (f = 0.5 GHz to 20 GHz,
TDIE = 85°C)
VCTL = −5 V or 0 V
Through Path
θJC is the junction to case bottom (channel to package bottom)
thermal resistance.
27 dBm
25 dBm
23 dBm
Terminated Path
Hot Switching
Table 3.
Package Option
θJC
Unit
VCTL = −3 V or 0 V
Through Path
Terminated Path
Hot Switching
C-10-10
Through Path
Terminated Path
21 dBm
19 dBm
17 dBm
118
200
°C/W
°C/W
Temperature
ESD CAUTION
Channel
150°C
Storage
Operating
−65°C to +150°C
−55°C to +85°C
ESD (Electrostatic Discharge) Sensitivity
Human Body Model (HBM)
Class 0, passed 150 V
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the
operational section of this specification is not implied.
Operation beyond the maximum operating conditions for
extended periods may affect product reliability.
Rev. E | Page 4 of 10
Data Sheet
HMC347B
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
CTRLB
3
4
5
CTRLA
CTRLB
CTRLA
2
6
RF1
1
7
RF2
10
9
8
NOTES
1. DIE BOTTOM MUST BE CONNECTED TO RF GROUND.
Figure 2. Pin Configuration
Table 4. Pin Function Descriptions1
Pin No.
Mnemonic Description
1
RF1
RF Throw Pad 1. This pad is dc-coupled and matched to 50 Ω. Blocking capacitors are required if the RF line
potential ≠ 0 V.
2, 5, 8, 10
3, 6, 9
4
CTRLA
CTRLB
RFC
Control Input A. See Figure 4 for the interface schematic.
Control Input B. See Figure 4 for the interface schematic.
RF Common Pad. This pad is dc-coupled and matched to 50 Ω. Blocking capacitors are required if the RF line
potential ≠ 0 V.
7
RF2
RF Throw Pad 2. This pad is dc-coupled and matched to 50 Ω. Blocking capacitors are required if the RF line
potential ≠ 0 V.
Die Bottom GND
Die bottom must be connected to RF ground.
1 No connection is required for the unlabeled grounds.
INTERFACE SCHEMATICS
R
1kΩ
RFC,
RF1
RF2
CTRLA,
CTRLB
C
1pF
Figure 3. RFC, RF1, and RF2 Interface Schematic
Figure 4. CTRLA, CTRLB Interface Schematic
Rev. E | Page 5 of 10
HMC347B
Data Sheet
TYPICAL PERFORMANCE CHARACTERISTICS
INSERTION LOSS, RETURN LOSS, AND ISOLATION
0
0
–1
–2
–3
–4
–5
–1
–2
–3
+85°C
+25°C
–55°C
RF1
RF2
–4
–5
0
5
10
15
20
25
0
5
10
15
20
25
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 5. Insertion Loss vs. Frequency over Temperature
Figure 7. Insertion Loss vs. Frequency, Between RFC and RF1/RF2
0
–5
0
RFC
RF1
RF2
–10
RF1 AND RF2 ON
RF1 AND RF2 OFF
–20
–30
–40
–50
–60
–70
–80
–10
–15
–20
–25
–30
–35
0
5
10
15
20
25
0
5
10
15
20
25
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 6. Return Loss vs. Frequency
Figure 8. Isolation vs. Frequency, Between RFC and RF1/RF2
Rev. E | Page 6 of 10
Data Sheet
HMC347B
INPUT P1dB, INPUT P0.1dB, AND INPUT IP3
35
35
30
25
20
15
10
30
25
20
+85°C
+25°C
–55°C
+85°C
+25°C
–55°C
15
10
0
5
10
15
20
0
5
10
15
20
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 9. Input P1dB vs. Frequency over Temperature, VCTL = −5 V
Figure 12. Input P1dB vs. Frequency over Temperature, VCTL = −3 V
35
35
30
25
30
25
20
20
+85°C
+25°C
–55°C
+85°C
+25°C
–55°C
15
10
15
10
0
5
10
15
20
0
5
10
15
20
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 13. Input P0.1dB vs. Frequency over Temperature, VCTL = −3 V
Figure 10. Input P0.1dB vs. Frequency over Temperature, VCTL = −5 V
50
50
45
40
45
40
35
35
+85°C
+25°C
–55°C
+85°C
+25°C
–55°C
30
30
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 14. Input IP3 vs. Frequency over Temperature, VCTL = −3 V
Figure 11. Input IP3 vs. Frequency over Temperature, VCTL = −5 V
Rev. E | Page 7 of 10
HMC347B
Data Sheet
THEORY OF OPERATION
The HMC347B requires two negative control voltages at the
CTRLx pads to control the state of the RF paths and requires no
supply.
The ideal power-up sequence is as follows:
1. Ground to the die bottom.
2. Power up the digital control inputs. The relative order of
the logic control inputs is not important.
3. Apply an RF input signal. The design is bidirectional and
the RF input signal can be applied to the RFC pad when
the RF1 and RF2 throw pads are outputs, or the RF input
signal can be applied to the RF1 and RF2 throw pads when
the RFC pad is the output. The RFx pads are dc-coupled to
0 V, and no dc blocking is required at the RFx pads when the
RF line potential is equal to 0 V.
Depending on the logic level applied to the CTRLx pads, one
RF path is in the insertion loss state and the other path is in the
isolation state (see Table 5). The insertion loss path conducts
the RF signal between the RF1 pad or RF2 pad and the RFC pad.
The isolation path provides high loss between the selected insertion
loss path and the unselected RF1 pad or RF2 pad that is termi-
nated to an internal 50 Ω resistor.
The power-down sequence is the reverse of the power-up
sequence.
Table 5. Control Voltage Truth Table
Digital Control Inputs
RF Paths
CTRLA
High
Low
CTRLB
Low
High
RF1 to RFC
RF2 to RFC
Insertion loss (on)
Isolation (off)
Isolation (off)
Insertion loss (on)
Rev. E | Page 8 of 10
Data Sheet
HMC347B
APPLICATIONS INFORMATION
heat spreader (moly tab), which is then attached to the ground
plane (see Figure 16).
MOUNTING AND BONDING TECHNIQUES
The HMC347B is back metallized and must be attached directly
to the ground plane with gold tin (AuSn) eutectic preforms or
with electrically conductive epoxy.
0.102mm (0.004") THICK GaAs MMIC
RIBBON BOND
0.076mm
(0.003")
The die thickness is 0.102 mm (4 mil). The 50 Ω microstrip
transmission lines on 0.127 mm (5 mil) thick, alumina thin film
substrates are recommended to bring the RF signal to and from
the HMC347B (see Figure 15).
RF GROUND PLANE
0.150mm
0.102mm (0.004") THICK GaAs MMIC
0.254mm (0.010") THICK ALUMINA
THIN FILM SUBSTRATE
(0.006”) THICK
MOLY TAB
RIBBON BOND
0.076mm
(0.003")
Figure 16. Bonding RF Pads to 10 mil Substrate
Microstrip substrates are placed as close to the HMC347B as
possible to minimize bond length. Typical die to substrate
spacing is 0.076 mm (3 mil).
RF GROUND PLANE
0.127mm (0.005") THICK ALUMINA
THIN FILM SUBSTRATE
RF bonds with 3 mil × 0.5 mil ribbon and dc bonds with 1 mil
diameter wire are recommended. All bonds must be as short as
possible.
Figure 15. Bonding RF Pads to 5 mil Substrate
When using 0.254 mm (10 mil) thick, alumina thin film substrates,
the HMC347B must be raised 0.150 mm (6 mil) so that the
surface of the HMC347B is coplanar with the surface of the
substrate. The device can be raised by attaching the 0.102 mm
(4 mil) thick die to a 0.150 mm (6 mil) thick molybdenum (Mo)
ASSEMBLY DIAGRAM
An assembly diagram of the HMC347B is shown in Figure 17.
RFC
3mil
NOMINAL
GAP
50Ω
TRANSMISSION
LINE
RF1
RF2
CTRLA CTRLB
RF AND DC BONDS
1mil GOLD WIRE
Figure 17. Die Assembly Diagram
Rev. E | Page 9 of 10
HMC347B
Data Sheet
OUTLINE DIMENSIONS
1.300
0.150 0.150
0.380
0.370
0.120
0.102
0.125
0.150
4
5
6
3
2
0.150
0.150
0.150
0.850
1
7
10
9
8
TOP VIEW
(CIRCUIT SIDE)
SIDE VIEW
0.10 × 0.10
Figure 18. 10-Pad Bare Die [CHIP]
(C-10-10)
Dimensions shown in millimeters
ORDERING GUIDE
Model1
Packing Information
Temperature Range
−55°C to +85°C
−55°C to +85°C
−55°C to +85°C
Package Description
10-Pad Bare Die [CHIP]
10-Pad Bare Die [CHIP]
10-Pad Bare Die [CHIP]
Package Option
HMC347B
HMC347B-GP
HMC347B-SX
Waffle Pack
Gel Pack
Waffle Pack (Sample Order)
C-10-10
C-10-10
C-10-10
1 All models are RoHS compliant.
©2020 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D22319-4/20(E)
Rev. E | Page 10 of 10
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