ADR435TRZ-EP-R7 [ADI]

Ultralow Noise XFET® Voltage References with Current Sink and Source Capability;
ADR435TRZ-EP-R7
型号: ADR435TRZ-EP-R7
厂家: ADI    ADI
描述:

Ultralow Noise XFET® Voltage References with Current Sink and Source Capability

光电二极管
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Low Noise XFET Voltage References with  
Current Sink and Source Capability  
Data Sheet  
ADR431-EP/ADR434-EP/ADR435-EP  
FEATURES  
PIN CONFIGURATION  
Low noise (0.1 Hz to 10.0 Hz): 3.5 μV p-p at 2.5 VO typical  
(ADR431-EP)  
No external capacitor required  
ADR431-EP/  
ADR434-EP/  
ADR435-EP  
1
2
3
4
8
7
6
5
DNC  
DNC  
V
COMP  
IN  
V
NIC  
OUT  
TOP VIEW  
(Not to Scale)  
Low temperature coefficient  
TRIM  
GND  
5 ppm/°C maximum (ADR431-EP)  
NOTES  
3 ppm/°C maximum (ADR434-EP/ADR435-EP)  
Load regulation: 15 ppm/mA maximum  
Line regulation: 20 ppm/V maximum  
Wide supply voltage operating range: 4.5 V to 18 V  
(ADR431-EP)  
1. NIC = NOT INTERNALLY CONNECTED. THIS PIN IS NOT CONNECTED INTERNALLY.  
2. DNC = DO NOT CONNECT. DO NOT CONNECT TO THIS PIN.  
Figure 1. 8-Lead SOIC_N (R-8)  
High output source and sink current: +10 mA and −10 mA  
ENHANCED PRODUCT FEATURES  
Supports defense and aerospace applications, aerospace  
qualified electronic component (AQEC) standard  
Military temperature range: −55°C to +125°C  
Controlled manufacturing baseline  
One assembly and test site  
One fabrication site  
Enhanced product change notification  
Qualification data available on request  
APPLICATIONS  
Precision data acquisition systems  
High resolution data converters  
Optical control circuits  
Precision instruments  
GENERAL DESCRIPTION  
The ADR431-EP/ADR434-EP/ADR435-EP are XFET® voltage  
references featuring low noise, high accuracy, and low temperature  
drift performance. Using Analog Devices, Inc., patented temperature  
drift curvature correction and eXtra implanted junction FET  
(XFET) technology, voltage change vs. temperature nonlinearity  
in the ADR431-EP/ADR434-EP/ADR435-EP is minimized.  
The ADR431-EP/ADR434-EP/ADR435-EP have the capability to  
source up to +10 mA of output current and sink up to −10 mA.  
They also come with a trim terminal to adjust the output voltage  
over a 0.5% range without compromising performance.  
The ADR431-EP/ADR434-EP/ADR435-EP are available in an  
8-lead narrow SOIC package and are specified over the military  
temperature range of −55°C to +125°C.  
The XFET references operate at lower current (800 μA) and  
lower supply voltage headroom (2 V) than buried Zener  
references. Buried Zener references require more than 5 V  
headroom for operation. The ADR431-EP/ADR434-EP/  
ADR435-EP XFET references are optimal low noise solutions for  
5 V systems.  
Additional application and technical information can be found in  
the ADR430/ADR431/ADR433/ADR434/ADR435 data sheet.  
Table 1. Selection Guide  
Output  
Voltage (V) (mV)  
Accuracy Temperature  
Model  
Coefficient (ppm/°C)  
ADR431T-EP 2.500  
ADR434T-EP 4.096  
ADR435T-EP 5.000  
1.0  
1.5  
2.0  
5
3
3
Rev. B  
Document Feedback  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registeredtrademarks arethe property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700 ©2010–2017 Analog Devices, Inc. All rights reserved.  
Technical Support  
www.analog.com  
 
 
 
 
 
ADR431-EP/ADR434-EP/ADR435-EP  
Data Sheet  
TABLE OF CONTENTS  
ADR431-EP Electrical Characteristics ........................................5  
Absolute Maximum Ratings ............................................................6  
Thermal Resistance.......................................................................6  
ESD Caution...................................................................................6  
Pin Configuration and Function Descriptions..............................7  
Typical Performance Characteristics ..............................................8  
Outline Dimensions..........................................................................9  
Ordering Guide .............................................................................9  
Features .............................................................................................. 1  
Enhanced Product Features ............................................................ 1  
Applications....................................................................................... 1  
Pin Configuration............................................................................. 1  
General Description......................................................................... 1  
Revision History ............................................................................... 2  
Specifications..................................................................................... 3  
ADR431-EP Electrical Characteristics ....................................... 3  
ADR434-EP Electrical Characteristics ...................................... 4  
REVISION HISTORY  
5/2017—Rev. A to Rev. B  
Deleted ADR439............................................................ Throughout  
Added Pin Configuration and Function Descriptions Section,  
Figure 2; Renumbered Sequentially, and Table 7 ......................... 7  
Changes to Typical Performance Characteristics Section........... 8  
8/2010—Rev. 0 to Rev. A  
Added ADR431-EP......................................................... Throughout  
Added ADR435-EP......................................................... Throughout  
Changes to Ordering Guide ............................................................ 8  
7/2010—Revision 0: Initial Version  
Rev. B | Page 2 of 9  
 
Data Sheet  
ADR431-EP/ADR434-EP/ADR435-EP  
SPECIFICATIONS  
ADR431-EP ELECTRICAL CHARACTERISTICS  
VIN = 4.5 V to 18 V, IL = 0 mA, TA = 25°C, unless otherwise noted.  
Table 2.  
Parameter  
Symbol  
VO  
Test Conditions/Comments  
Min  
Typ  
Max  
Unit  
OUTPUT VOLTAGE  
INITIAL ACCURACY  
2.499 2.500 2.501  
V
VOERR  
1.0  
mV  
0.04  
%
TEMPERATURE COEFFICIENT  
LINE REGULATION  
TCVO  
−55°C < TA < +125°C  
1.5  
5
5
ppm/°C  
ppm/V  
ppm/mA  
ppm/mA  
µA  
ΔVO/ΔVIN −55°C < TA < +125°C  
20  
15  
15  
800  
LOAD REGULATION  
ΔVO/ΔIL  
IL = 0 mA to 10 mA, VIN = 5 V, −55°C < TA < +125°C  
IL = −10 mA to 0 mA, VIN = 5 V, −55°C < TA < +125°C  
QUIESCENT CURRENT  
VOLTAGE NOISE  
IIN  
No load, −55°C < TA < +125°C  
0.1 Hz to 10.0 Hz  
1 kHz  
580  
3.5  
80  
eN p-p  
eN  
µV p-p  
nV/√Hz  
µs  
VOLTAGE NOISE DENSITY  
TURN ON SETTLING TIME  
LONG-TERM STABILITY1  
OUTPUT VOLTAGE HYSTERESIS  
RIPPLE REJECTION RATIO  
SHORT CIRCUIT TO GND  
tR  
CL = 0 µF  
10  
∆VO  
VO_HYS  
RRR  
ISC  
1000 hours  
40  
ppm  
ppm  
dB  
20  
fIN = 1 kHz  
−70  
40  
mA  
SUPPLY VOLTAGE OPERATING RANGE VIN  
SUPPLY VOLTAGE HEADROOM VIN − VO  
4.5  
2
18  
V
V
1 The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.  
Rev. B | Page 3 of 9  
 
 
ADR431-EP/ADR434-EP/ADR435-EP  
Data Sheet  
ADR434-EP ELECTRICAL CHARACTERISTICS  
VIN = 6.1 V to 18 V, IL = 0 mA, TA = 25°C, unless otherwise noted.  
Table 3.  
Parameter  
Symbol  
VO  
Test Conditions/Comments  
Min  
Typ  
Max  
Unit  
OUTPUT VOLTAGE  
INITIAL ACCURACY  
4.0945 4.096 4.0975  
V
VOERR  
1.5  
mV  
0.04  
%
TEMPERATURE COEFFICIENT  
LINE REGULATION  
TCVO  
−55°C < TA < +125°C  
1
5
3
ppm/°C  
ppm/V  
ppm/mA  
ppm/mA  
µA  
ΔVO/ΔVIN −55°C < TA < +125°C  
20  
15  
15  
800  
LOAD REGULATION  
ΔVO/ΔIL  
IL = 0 mA to 10 mA, VIN = 7 V, −55°C < TA < +125°C  
IL = −10 mA to 0 mA, VIN = 7 V, −55°C < TA < +125°C  
QUIESCENT CURRENT  
IIN  
No load, −55°C < TA < +125°C  
0.1 Hz to 10.0 Hz  
1 kHz  
595  
6.25  
100  
10  
VOLTAGE NOISE  
eN p-p  
eN  
µV p-p  
nV/√Hz  
µs  
VOLTAGE NOISE DENSITY  
TURN ON SETTLING TIME  
LONG-TERM STABILITY1  
OUTPUT VOLTAGE HYSTERESIS  
RIPPLE REJECTION RATIO  
SHORT CIRCUIT TO GND  
SUPPLY VOLTAGE OPERATING RANGE  
SUPPLY VOLTAGE HEADROOM  
tR  
CL = 0 µF  
∆VO  
VO_HYS  
RRR  
ISC  
1000 hours  
40  
ppm  
ppm  
dB  
20  
fIN = 1 kHz  
−70  
40  
mA  
VIN  
6.1  
2
18  
V
VIN − VO  
V
1 The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.  
Rev. B | Page 4 of 9  
 
Data Sheet  
ADR431-EP/ADR434-EP/ADR435-EP  
ADR435-EP ELECTRICAL CHARACTERISTICS  
VIN = 7.0 V to 18 V, IL = 0 mA, TA = 25°C, unless otherwise noted.  
Table 4.  
Parameter  
Symbol  
VO  
Test Conditions/Comments  
Min  
Typ  
Max  
Unit  
OUTPUT VOLTAGE  
INITIAL ACCURACY  
4.998 5.000 5.002  
V
VOERR  
2.0  
mV  
0.04  
%
TEMPERATURE COEFFICIENT  
LINE REGULATION  
TCVO  
−55°C < TA < +125°C  
1
5
3
ppm/°C  
ppm/V  
ppm/mA  
ppm/mA  
µA  
ΔVO/ΔVIN −55°C < TA < +125°C  
20  
15  
15  
800  
LOAD REGULATION  
ΔVO/ΔIL  
IL = 0 mA to 10 mA, VIN = 8 V, −55°C < TA < +125°C  
IL = −10 mA to 0 mA, VIN = 8 V, −55°C < TA < +125°C  
QUIESCENT CURRENT  
VOLTAGE NOISE  
IIN  
No load, −55°C < TA < +125°C  
0.1 Hz to 10.0 Hz  
1 kHz  
620  
8
eN p-p  
eN  
µV p-p  
nV/√Hz  
µs  
VOLTAGE NOISE DENSITY  
TURN ON SETTLING TIME  
LONG-TERM STABILITY1  
OUTPUT VOLTAGE HYSTERESIS  
RIPPLE REJECTION RATIO  
SHORT CIRCUIT TO GND  
115  
10  
tR  
CL = 0 µF  
∆VO  
VO_HYS  
RRR  
ISC  
1000 hours  
40  
ppm  
ppm  
dB  
20  
fIN = 1 kHz  
−70  
40  
mA  
SUPPLY VOLTAGE OPERATING RANGE VIN  
SUPPLY VOLTAGE HEADROOM VIN − VO  
7.0  
2
18  
V
V
1 The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.  
Rev. B | Page 5 of 9  
 
ADR431-EP/ADR434-EP/ADR435-EP  
Data Sheet  
ABSOLUTE MAXIMUM RATINGS  
TA = 25°C, unless otherwise noted.  
THERMAL RESISTANCE  
θJA is specified for the worst-case conditions, that is, a device  
soldered in a circuit board for surface-mount packages.  
Table 5.  
Parameter  
Rating  
Supply Voltage  
20 V  
Indefinite  
−65°C to +125°C  
−55°C to +125°C  
−65°C to +150°C  
300°C  
Table 6. Thermal Resistance  
Package Type  
Output Short-Circuit Duration to GND  
Storage Temperature Range  
Operating Temperature Range  
Junction Temperature Range  
Lead Temperature, Soldering (60 sec)  
θJA  
θJC  
Unit  
8-Lead SOIC_N (R-8)  
130  
43  
°C/W  
ESD CAUTION  
Stresses at or above those listed under Absolute Maximum  
Ratings may cause permanent damage to the product. This is a  
stress rating only; functional operation of the product at these  
or any other conditions above those indicated in the operational  
section of this specification is not implied. Operation beyond  
the maximum operating conditions for extended periods may  
affect product reliability.  
Rev. B | Page 6 of 9  
 
 
 
Data Sheet  
ADR431-EP/ADR434-EP/ADR435-EP  
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS  
ADR431-EP/  
1
2
3
4
8
7
6
5
DNC  
DNC  
ADR434-EP/  
ADR435-EP  
V
COMP  
IN  
V
NIC  
OUT  
TOP VIEW  
(Not to Scale)  
TRIM  
GND  
NOTES  
1. NIC = NOT INTERNALLY CONNECTED. THIS PIN IS NOT CONNECTED INTERNALLY.  
2. DNC = DO NOT CONNECT. DO NOT CONNECT TO THIS PIN.  
Figure 2. Pin Configuration  
Table 7. Pin Function Descriptions  
Pin No.  
Mnemonic Description  
1, 8  
2
DNC  
VIN  
Do Not Connect. Do not connect to this pin.  
Input Voltage Connection.  
3
NIC  
Not Internally Connected. This pin is not connected internally.  
4
5
6
7
GND  
TRIM  
VOUT  
COMP  
Ground.  
Output Voltage Trim.  
Output Voltage.  
Compensation Input. Connect a series resistor capacitor network from COMP to VOUT to reduce overall noise.  
Rev. B | Page 7 of 9  
 
ADR431-EP/ADR434-EP/ADR435-EP  
Data Sheet  
TYPICAL PERFORMANCE CHARACTERISTICS  
0.80  
0.75  
0.70  
0.65  
+125°C  
0.60  
+25°C  
–55°C  
0.55  
0.50  
0.45  
0.40  
0.35  
0.30  
6
8
10  
12  
14  
16  
18  
INPUT VOLTAGE (V)  
Figure 3. Supply Current vs. Input Voltage at Various Temperatures  
Rev. B | Page 8 of 9  
 
Data Sheet  
ADR431-EP/ADR434-EP/ADR435-EP  
OUTLINE DIMENSIONS  
5.00 (0.1968)  
4.80 (0.1890)  
8
1
5
4
6.20 (0.2441)  
5.80 (0.2284)  
4.00 (0.1574)  
3.80 (0.1497)  
0.50 (0.0196)  
45°  
1.27 (0.0500)  
BSC  
1.75 (0.0688)  
1.35 (0.0532)  
0.25 (0.0099)  
0.25 (0.0098)  
0.10 (0.0040)  
8°  
0°  
0.51 (0.0201)  
0.31 (0.0122)  
COPLANARITY  
0.10  
1.27 (0.0500)  
0.40 (0.0157)  
0.25 (0.0098)  
0.17 (0.0067)  
SEATING  
PLANE  
COMPLIANT TO JEDEC STANDARDS MS-012-AA  
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS  
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR  
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.  
Figure 4. 8-Lead Standard Small Outline Package [SOIC_N]  
Narrow Body  
(R-8)  
Dimensions shown in millimeters and (inches)  
ORDERING GUIDE  
Initial  
Accuracy,  
Temperature  
Coefficient  
Output  
Voltage (V)  
Temperature  
Range  
Package  
Description  
Package Ordering  
Model1  
(mV) (%)  
Package (ppm/°C)  
Option  
Quantity  
ADR431TRZ-EP  
ADR431TRZ-EP-R7  
ADR434TRZ-EP  
ADR434TRZ-EP-R7  
ADR435TRZ-EP  
ADR435TRZ-EP-R7  
2.500  
2.500  
1.0  
1.0  
1.5  
1.5  
2.0  
2.0  
0.04  
0.04  
0.04  
0.04  
0.04  
0.04  
5
5
3
3
3
3
−55°C to +125°C  
−55°C to +125°C  
−55°C to +125°C  
−55°C to +125°C  
−55°C to +125°C  
−55°C to +125°C  
8-Lead SOIC_N  
8-Lead SOIC_N  
8-Lead SOIC_N  
8-Lead SOIC_N  
8-Lead SOIC_N  
8-Lead SOIC_N  
R-8  
R-8  
98  
1,000  
98  
1,000  
98  
1,000  
4.096  
4.096  
R-8  
R-8  
5.000  
5.000  
R-8  
R-8  
1 Z = RoHS Compliant Part.  
©2010–2017 Analog Devices, Inc. All rights reserved. Trademarks and  
registered trademarks are the property of their respective owners.  
D09218-0-5/17(B)  
Rev. B | Page 9 of 9  
 
 

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