ADR293GT9 [ADI]
Low Noise Micropower Precision Voltage Reference; 低噪声微功率高精度电压基准
| 型号： | ADR293GT9 |
| 厂家： | 
ADI |
| 描述： | Low Noise Micropower Precision Voltage Reference |
| 文件： | 总11页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Low Noise Micropower
Precision Voltage Reference
a
ADR293
PIN CONFIGURATIONS
FEATURES
Voltage Output 5.0 V
8-Lead Narrow Body SO
(R Suffix)
6.0 V to 15 V Supply Range
Supply Current 15 A Max
Initial Accuracy ؎3 mV Max
Temperature Coefficient 8 ppm/؇C Max
Low Noise 15 V p–p Typ (0.1 Hz to 10 Hz)
High Output Current 5 mA Min
Temperature Range ؊40؇C to ؉125؇C
REF02/REF19x Pinout
1
2
3
4
8
7
6
5
NC
NC
NC
V
ADR293
V
IN
TOP VIEW
(Not to Scale)
NC
OUT
GND
NC
NC = NO CONNECT
APPLICATIONS
Portable Instrumentation
8-Lead TSSOP
(RU Suffix)
Precision Reference for 5 V Systems
A/D and D/A Converter Reference
Solar Powered Applications
Loop-Current Powered Instruments
1
2
3
4
8
7
6
5
NC
NC
NC
V
ADR293
V
IN
TOP VIEW
(Not to Scale)
NC
OUT
GENERAL DESCRIPTION
The ADR293 is a low noise, micropower precision voltage
reference that utilizes an XFET (eXtra implanted junction
GND
NC
™
NC = NO CONNECT
FET) reference circuit. The new XFET architecture offers sig-
nificant performance improvements over traditional bandgap
and Zener-based references. Improvements include: one quarter
the voltage noise output of bandgap references operating at the
same current, very low and ultralinear temperature drift, low
thermal hysteresis and excellent long-term stability.
3-Lead TO-92
(T9 Suffix)
PIN 1
PIN 2
GND
PIN 3
The ADR293 is a series voltage reference providing stable and
accurate output voltage from a 6.0 V supply. Quiescent current
is only 15 µA max, making this device ideal for battery powered
instrumentation. Three electrical grades are available offering
initial output accuracy of ±3 mV, ±6 mV, and ±10 mV. Tem-
perature coefficients for the three grades are 8 ppm/°C, 15 ppm/°C
and 25 ppm/°C max. Line regulation and load regulation are typi-
cally 30 ppm/V and 30 ppm/mA, maintaining the reference’s over-
all high performance.
V
V
OUT
IN
BOTTOM VIEW
Part Number
Nominal Output Voltage (V)
ADR290
ADR291
ADR292
ADR293
2.048
2.500
4.096
5.000
The ADR293 is specified over the extended industrial tempera-
ture range of –40°C to +125°C. This device is available in the
8-lead SOIC, 8-lead TSSOP and the TO-92 package.
XFET is a trademark of Analog Devices, Inc.
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
Fax: 781/326-8703
World Wide Web Site: http://www.analog.com
© Analog Devices, Inc., 1998
ADR293–SPECIFICATIONS
(V = ؉6.0 V, T = ؉25؇C unless otherwise noted)
ELECTRICAL SPECIFICATIONS
S
A
Parameter
Symbol
Conditions
Min
Typ Max
Units
INITIAL ACCURACY
“E” Grade
VO
IOUT = 0 mA
4.997 5.000 5.003
V
V
V
“F” Grade
4.994
4.990
5.006
5.010
“G” Grade
LINE REGULATION
“E/F” Grades
∆VO/∆VIN
6.0 V to 15 V, IOUT = 0 mA
VS = 6.0 V, 0 mA to 5 mA
30
40
100
150
ppm/V
ppm/V
“G” Grade
LOAD REGULATION
“E/F” Grades
“G” Grade
∆VO/∆ILOAD
30
40
100
150
ppm/mA
ppm/mA
LONG TERM STABILITY
NOISE VOLTAGE
∆VO
eN
1000 hrs @ +25°C, VS = +15 V
0.1 Hz to 10 Hz
0.2
15
ppm
µV p-p
nV/√Hz
WIDEBAND NOISE DENSITY
eN
at 1 kHz
640
ELECTRICAL SPECIFICATIONS (VS = ؉6.0 V, TA = ؊25؇C ≤ TA ≤ ؉85؇C unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ Max
Units
TEMPERATURE COEFFICIENT
“E” Grade
TCVO/°C
IOUT = 0 mA
3
8
15
25
ppm/°C
ppm/°C
ppm/°C
“F” Grade
5
“G” Grade
10
LINE REGULATION
“E/F” Grades
∆VO/∆VIN
6.0 V to 15 V, IOUT = 0 mA
VS = 6.0 V, 0 mA to 5 mA
35
50
150
200
ppm/V
ppm/V
“G” Grade
LOAD REGULATION
“E/F” Grades
“G” Grade
∆VO/∆ILOAD
20
30
150
200
ppm/mA
ppm/mA
ELECTRICAL SPECIFICATIONS (VS = ؉6.0 V, TA = ؊40؇C ≤ TA ≤ ؉125؇C unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ Max
Units
TEMPERATURE COEFFICIENT
“E” Grade
TCVO/°C
IOUT = 0 mA
3
10
20
30
ppm/°C
ppm/°C
ppm/°C
“F” Grade
5
“G” Grade
10
LINE REGULATION
“E/F” Grades
“G” Grade
∆VO/∆VIN
6.0 V to 15 V, IOUT = 0 mA
40
70
200
250
ppm/V
ppm/V
LOAD REGULATION
“E/F” Grades
“G” Grade
∆VO/∆ILOAD
VS = 6.0 V, 0 mA to 5 mA
20
30
200
300
ppm/mA
ppm/mA
SUPPLY CURRENT
@ +25°C
11
15
15
20
µA
µA
THERMAL HYSTERESIS
TO-92
SO-8
TSSOP-8
160
72
157
ppm
ppm
ppm
Specifications subject to change without notice.
–2–
REV. 0
ADR293
WAFER TEST LIMITS (VS = ؉6.0 V, TA = ؉25؇C unless otherwise noted)
Parameter
Symbol
Conditions
Limits
Units
INITIAL ACCURACY
VO
IOUT = 0 mA
4.990/5.010
V
LINE REGULATION
LOAD REGULATION
∆VO/∆VIN
6.0 V < VIN < 15 V, IOUT = 0 mA
0 mA to 5 mA
150
150
15
ppm/V
ppm/mA
µA
∆VO/∆ILOAD
SUPPLY CURRENT
No load
NOTES
Electrical tests are performed as wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
Specifications subject to change without notice.
DICE CHARACTERISTICS
Die Size 0.074
؋
0.052 inch, 3848 sq. mils (1.88
؋
1.32 mm, 2.48 sq. mm) Transistor Count: 52
1
VIN
4
VOUT(SENSE)
VOUT(FORCE)
3
2
GND
REV. 0
–3–
ADR293
ABSOLUTE MAXIMUM RATINGS1
Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ؉18 V
Output Short-Circuit Duration . . . . . . . . . . . . . . . . . Indefinite
Storage Temperature Range
T9, R, RU Package . . . . . . . . . . . . . . . . . Ϫ65°C to ؉150°C
Operating Temperature Range . . . . . . . . . . Ϫ40°C to ؉125°C
Junction Temperature Range
T9, R, RU Package . . . . . . . . . . . . . . . . . Ϫ65°C to ؉125°C
Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . ؉300°C
1
Package Type
Units
JA
JC
8-Lead SOIC (R)
3-Lead TO-92 (T9)
8-Lead TSSOP (RU)
158
162
240
43
120
43
°C/W
°C/W
°C/W
NOTE
1θJA is specified for worst case conditions, i.e., θJA is specified for device in socket
for PDIP, and θJA is specified for a device soldered in circuit board for SOIC
packages.
NOTE
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
ORDERING GUIDE
Model
Temperature Range
Package Type
Package Options
ADR293ER, ADR293FR, ADR293GR
ADR293ER-REEL, ADR293FR-REEL, ADR293GR-REEL
ADR293ER-REEL7, ADR293FR-REEL7, ADR293GR-REEL7
ADR293GT9
ADR293GT9-REEL
ADR293GRU-REEL
Ϫ40°C to ϩ125°C
Ϫ40°C to ϩ125°C
Ϫ40°C to ϩ125°C
Ϫ40°C to ϩ125°C
Ϫ40°C to ϩ125°C
Ϫ40°C to ϩ125°C
Ϫ40°C to ϩ125°C
ϩ25°C
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
3-Lead TO-92
3-Lead TO-92
8-Lead TSSOP RU-8
8-Lead TSSOP RU-8
DICE
R-8
R-8
R-8
T9
T9
ADR293GRU-REEL7
ADR293GBC
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADR293 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
–4–
REV. 0
Typical Performance Characteristics–ADR293
5.006
5.004
5.002
5.000
4.998
4.996
4.994
100
V
= 6.0V
3 TYPICAL PARTS
S
V
= 6.0V TO 15V
I
= 0mA
S
OUT
80
60
40
20
0
؊50
؊25
0
25
50
75
100
125
0
25
50
75
100
125
؊50
؊25
TEMPERATURE – ؇C
TEMPERATURE – ؇C
Figure 1. VOUT vs. Temperature
Figure 4. Line Regulation vs. Temperature
16
14
12
10
100
80
60
40
20
0
V
= 6.0V TO 9.0V
I
= 0mA
S
OUT
T
= +125؇C
A
T
= +25؇C
= ؊40؇C
A
T
A
8
6
4
2
0
0
2
4
6
8
10
12
14
16
؊50
؊25
0
25
50
75
100
125
INPUT VOLTAGE – V
TEMPERATURE – ؇C
Figure 2. Supply Current vs. Input Voltage
Figure 5. Line Regulation vs. Temperature
16
0.7
V
= 6.0V
S
0.6
0.5
0.4
0.3
0.2
0.1
0
14
12
10
8
T
= +125؇C
A
T
= +25؇C
A
T
= ؊40؇C
A
6
0
25
50
75
100
125
؊50
؊25
0
0.5
1.0
1.5 2.0
2.5
3.0 3.5
4.0
4.5
5.0
TEMPERATURE – ؇C
LOAD CURRENT – mA
Figure 3. Supply Current vs. Temperature
Figure 6. Minimum Input-Output Voltage Differential vs.
Load Current
REV. 0
–5–
ADR293
120
100
80
200
V
= 6.0V
S
V
= 6.0V
S
160
120
80
60
I
= 5mA
OUT
40
20
0
I
= 1mA
OUT
40
0
؊50
؊25
0
25
50
75
100
125
10
100
FREQUENCY – Hz
1000
TEMPERATURE – ؇C
Figure 10. Ripple Rejection vs. Frequency
Figure 7. Load Regulation vs. Temperature
2
1
0
50
40
30
20
10
0
V
= 6.0V
= 0mA
S
I
L
T
= +25؇C
A
؊1
؊2
؊3
؊4
T
= ؊40؇C
A
T
= +125؇C
A
0
1
10
10
100
FREQUENCY – Hz
1k
10k
SOURCING LOAD CURRENT – mA
Figure 8. ∆VOUT from Nominal vs. Load Current
Figure 11. Output Impedance vs. Frequency
1200
V
= 15V
IN
T
= ؉25؇C
A
1000
800
10V p-p
600
400
200
0
1s
10
100
1000
FREQUENCY – Hz
Figure 9. Voltage Noise Density
Figure 12. 0.1 Hz to 10 Hz Noise
–6–
REV. 0
ADR293
I
= 5mA
L
I = 5mA
L
C
= 1nF
L
5V/DIV
2V/DIV
50s
1ms
Figure 13. Turn-On Time
Figure 16. Load Transient
I
= 5mA
I = 5mA
L
L
C
= 100nF
L
5V/DIV
1ms
2V/DIV
50s
Figure 17. Load Transient
Figure 14. Turn-Off Time
I
= 5mA
L
1ms
Figure 15. Load Transient
REV. 0
–7–
ADR293
THEORY OF OPERATION
Device Power Dissipation Considerations
The ADR293 uses a new reference generation technique known
as XFET, which yields a reference with low noise, low supply
current and very low thermal hysteresis.
The ADR293 is guaranteed to deliver load currents to 5 mA
with an input voltage that ranges from 5.5 V to 15 V. When this
device is used in applications with large input voltages, care
should be exercised to avoid exceeding the published specifica-
tions for maximum power dissipation or junction temperature
that could result in premature device failure. The following
formula should be used to calculate a device’s maximum junc-
tion temperature or dissipation:
The core of the XFET reference consists of two junction field-
effect transistors one of which has an extra channel implant to
raise its pinch-off voltage. By running the two JFETS at the
same drain current, the difference in pinch-off voltage can be
amplified and used to form a highly stable voltage reference.
The intrinsic reference voltage is around 0.5 V with a negative
temperature coefficient of about –120 ppm/K. This slope is
essentially locked to the dielectric constant of silicon and can be
closely compensated by adding a correction term generated in
the same fashion as the proportional-to-temperature (PTAT)
term used to compensate bandgap references. The big advan-
tage over a bandgap reference is that the intrinsic temperature
coefficient is some thirty times lower (therefore less correction is
needed) and this results in much lower noise since most of the
noise of a bandgap reference comes from the temperature com-
pensation circuitry.
TJ −T
A
PD =
θJA
In this equation, TJ and TA are the junction and ambient tem-
peratures, respectively, PD is the device power dissipation, and
θ
JA is the device package thermal resistance.
Basic Voltage Reference Connections
References, in general, require a bypass capacitor connected
from the VOUT pin to the GND pin. The circuit in Figure 19
illustrates the basic configuration for the ADR293. Note that
the decoupling capacitors are not required for circuit stability.
The simplified schematic below shows the basic topology of the
ADR293. The temperature correction term is provided by a
current source with value designed to be proportional to abso-
lute temperature. The general equation is:
NC
1
2
3
4
8
7
6
5
NC
NC
INPUT
ADR293
OUTPUT
R1+ R2 + R3
NC
VOUT = ∆VP
+ IPTAT R3
(
)(
)
+
R1
10F
0.1F
0.1F
NC
where ∆VP is the difference in pinch-off voltage between the two
FETs and IPTAT is the positive temperature coefficient correction
current.
NC = NO CONNECT
Figure 19. Basic Voltage Reference Configuration
The process used for the XFET reference also features vertical
NPN and PNP transistors, the latter of which are used as output
devices to provide a very low drop-out voltage.
Noise Performance
The noise generated by the ADR293 is typically less than
15 µVp-p over the 0.1 Hz to 10 Hz band. The noise measure-
ment is made with a bandpass filter made of a 2-pole high-pass
filter with a corner frequency at 0.1 Hz and a 2-pole low-pass
filter with a corner frequency at 10 Hz.
V
IN
I
I
1
1
Turn-On Time
Upon application of power (cold start), the time required for the
output voltage to reach its final value within a specified error
band is defined as the turn-on settling time. Two components
normally associated with this are; the time for the active circuits
to settle, and the time for the thermal gradients on the chip to
stabilize. Figure 13 shows the typical turn-on time for the
ADR293.
*
V
OUT
⌬V
R1
R2
P
I
PTAT
R3
GND
*
EXTRA CHANNEL IMPLANT
؉
؉
R1 R2 R3
V
؍
؋
⌬V ؉ I ؋
R3 PTAT
OUT
P
R1
Figure 18. Simplified Schematic
–8–
REV. 0
ADR293
APPLICATIONS
A Precision Current Source
A Negative Precision Reference without Precision Resistors
In many current-output CMOS DAC applications where the
output signal voltage must be of the same polarity as the refer-
ence voltage, it is often required to reconfigure a current-
switching DAC into a voltage-switching DAC through the use
of a 1.25 V reference, an op amp and a pair of resistors. Using
a current-switching DAC directly requires the need for an
additional operational amplifier at the output to reinvert the
signal. A negative voltage reference is then desirable from the
point that an additional operational amplifier is not required
for either reinversion (current-switching mode) or amplifica-
tion (voltage-switching mode) of the DAC output voltage. In
general, any positive voltage reference can be converted into a
negative voltage reference through the use of an operational
amplifier and a pair of matched resistors in an inverting configu-
ration. The disadvantage to that approach is that the largest single
source of error in the circuit is the relative matching of the resis-
tors used.
Many times in low power applications, the need arises for a preci-
sion current source that can operate on low supply voltages. As
shown in Figure 21, the ADR293 is configured as a precision
current source. The circuit configuration illustrated is a floating
current source with a grounded load. The reference’s output
voltage is bootstrapped across RSET, which sets the output current
into the load. With this configuration, circuit precision is main-
tained for load currents in the range from the reference’s supply
current, typically 15 µA to approximately 5 mA.
V
IN
2
ADR293
6
V
OUT
R1
GND
4
1F
The circuit illustrated in Figure 20 avoids the need for tightly
matched resistors with the use of an active integrator circuit.
In this circuit, the output of the voltage reference provides the
input drive for the integrator. The integrator, to maintain circuit
equilibrium, adjusts its output to establish the proper relation-
ship between the reference’s VOUT and GND. One caveat with
this approach should be mentioned: although rail-to-rail output
amplifiers work best in the application, these operational ampli-
fiers require a finite amount (mV) of headroom when required
to provide any load current. The choice for the circuit’s negative
supply should take this issue into account.
R
SET
I
SY
ADJUST
·
P
1
I
OUT
R
L
Figure 21. A Precision Current Source
V
IN
2
1F
1k⍀
ADR293
V
6
+5V
OUT
GND
4
100⍀
A
1
1F
100k⍀
–V
REF
–5V
A
= 1/2 OP291,
1/2 OP295
1
Figure 20. A Negative Precision Voltage Reference Uses
No Precision Resistors
REV. 0
–9–
ADR293
Kelvin Connections
Voltage Regulator For Portable Equipment
In many portable instrumentation applications where PC board
cost and area go hand-in-hand, circuit interconnects are very often
of dimensionally minimum width. These narrow lines can cause
large voltage drops if the voltage reference is required to provide
load currents to various functions. In fact, a circuit’s interconnects
can exhibit a typical line resistance of 0.45 mW/square (1 oz. Cu,
for example). Force and sense connections also referred to as
Kelvin connections, offer a convenient method of eliminating the
effects of voltage drops in circuit wires. Load currents flowing
through wiring resistance produce an error (VERROR = R ϫ IL ) at
the load. However, the Kelvin connection of Figure 22 overcomes
the problem by including the wiring resistance within the forcing
loop of the op amp. Since the op amp senses the load voltage, op
amp loop control forces the output to compensate for the wiring
error and to produce the correct voltage at the load.
The ADR293 is ideal for providing a stable, low cost and low
power reference voltage in portable equipment power supplies.
Figure 23 shows how the ADR293 can be used in a voltage
regulator that not only has low output noise (as compared to
switch mode design) and low power, but also a very fast recovery
after current surges. Some precautions should be taken in the
selection of the output capacitors. Too high an ESR (effective
series resistance) could endanger the stability of the circuit. A
solid tantalum capacitor, 16 V or higher, and an aluminum elec-
trolytic capacitor, 10 V or higher, are recommended for C1 and
C2, respectively. Also, the path from the ground side of C1 and
C2 to the ground side of R1 should be kept as short as possible.
CHARGER
INPUT
0.1F
R3
510k⍀
2
V
V
IN
IN
R
V
2
3
OUT
6
LW
+V
OUT
6V
7
4
+
IRF9530
6
ADR293
SENSE
LEAD-ACID
BATTERY
2
V
IN
OP-20
R
GND
4
LW
+5V, 100mA
+V
FORCE
OUT
A
1
ADR293
V
6
+
+
C1
68F
TANT
C2
R2
402k⍀
1%
R1
402k⍀
1%
1000F
ELECT
R
OUT
L
GND
4
100k⍀
1F
Figure 23. Voltage Regulator for Portable Equipment
A
= 1/2 OP295
1
Figure 22. Advantage of Kelvin Connection
–10–
REV. 0
ADR293
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
8-Lead Narrow Body SO
(R-8)
8-Lead TSSOP
(RU-8)
0.122 (3.10)
0.114 (2.90)
0.1968 (5.00)
0.1890 (4.80)
8
1
5
4
8
5
0.1574 (4.00)
0.1497 (3.80)
0.2440 (6.20)
0.2284 (5.80)
1
0.102 (2.59)
0.094 (2.39)
PIN 1
0.0196 (0.50)
4
x 45°
0.0099 (0.25)
PIN 1
0.0098 (0.25)
0.0040 (0.10)
0.0256 (0.65)
BSC
8°
0°
0.006 (0.15)
0.002 (0.05)
0.0500 0.0192 (0.49)
0.0500 (1.27)
0.0160 (0.41)
0.0098 (0.25)
0.0075 (0.19)
SEATING
PLANE
(1.27)
0.0433
(1.10)
MAX
0.0138 (0.35)
BSC
0.028 (0.70)
0.020 (0.50)
8؇
0؇
0.0118 (0.30)
0.0075 (0.19)
SEATING
PLANE
0.0079 (0.20)
0.0035 (0.090)
3-Lead TO-92
(T9 Suffix)
0.205 (5.20)
0.175 (4.96)
0.135
(3.43)
MIN
0.210 (5.33)
0.170 (4.38)
0.050
(1.27)
MAX
SEATING
PLANE
0.019 (0.482)
0.016 (0.407)
SQUARE
0.500
(12.70)
MIN
0.055 (1.39)
0.045 (1.15)
0.105 (2.66)
0.095 (2.42)
0.105 (2.66)
0.080 (2.42)
0.165 (4.19)
0.125 (3.94)
1
2
3
0.105 (2.66)
0.080 (2.42)
BOTTOM VIEW
REV. 0
–11–
相关型号：
ADR318ARJZ-REEL7
1-OUTPUT THREE TERM VOLTAGE REFERENCE, 1.8V, PDSO5, LEAD FREE, MO-178AA, SOT-23, 5 PIN
ROCHESTER
ADR318ARJZ-REEL7
IC 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 1.8 V, PDSO5, LEAD FREE, MO-178AA, SOT-23, 5 PIN, Voltage Reference
ADI
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