ADL8104ACPZN [ADI]
Wideband, High Linearity, Low Noise Amplifier, 0.4 GHz to 7.5 GHz;
| 型号： | ADL8104ACPZN |
| 厂家： | 
ADI |
| 描述： | Wideband, High Linearity, Low Noise Amplifier, 0.4 GHz to 7.5 GHz |
| 文件： | 总23页 (文件大小：617K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Wideband, High Linearity,
Low Noise Amplifier, 0.4 GHz to 7.5 GHz
Data Sheet
ADL8104
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Single positive supply (self biased)
High OIP2: 52 dBm typical at 0.6 GHz to 7.5 GHz
High gain: 15 dB typical at 0.6 GHz to 6 GHz
High OIP3: 32 dBm typical
Low noise figure: 3.5 dB typical at 0.4 GHz to 6 GHz
RoHS-compliant, 3 mm × 3 mm, 16-lead LFCSP
GND
RF
1
2
3
4
12 NC
11 RF
IN
OUT
GND
NC
10
9
NC
NC
APPLICATIONS
Test instrumentation
Military communications
Figure 1.
GENERAL DESCRIPTION
The ADL8104 is a gallium arsenide (GaAs), monolithic
microwave integrated circuit (MMIC), pseudomorphic high
electron mobility transistor (pHEMT), low noise, wideband,
high linearity amplifier that operates from 0.4 GHz to 7.5 GHz.
high output second-order intercept (OIP2) of 52 dBm typical at
0.6 GHz to 6 GHz, making the ADL8104 suitable for military
and test instrumentation applications.
The ADL8104 also features inputs and outputs that are
internally matched to 50 Ω. The RFIN and RFOUT pins are
internally ac-coupled and the bias inductor is also integrated,
making the ADL8104 ideal for surface-mounted technology
(SMT)-based, high density applications.
The ADL8104 provides a typical gain of 15 dB at 0.6 GHz to
6 GHz, a 3.5 dB typical noise figure at 0.4 GHz to 6 GHz, a
20 dBm typical output power for 1 dB compression (OP1dB) at
0.6 GHz to 6 GHz, and a typical output third-order intercept
(OIP3) of 32 dBm at 0.6 GHz to 6 GHz, requiring only 150 mA
from a 5 V drain supply voltage. The low noise amplifier has a
The ADL8104 is housed in an RoHS-compliant, 3 mm × 3 mm,
16-lead LFCSP.
Rev. 0
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Technical Support
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www.analog.com
ADL8104
Data Sheet
TABLE OF CONTENTS
Features.............................................................................................. 1
Electrostatic Discharge (ESD) Ratings.......................................5
ESD Caution ..................................................................................5
Pin Configuration and Function Descriptions .............................6
Interface Schematics .....................................................................6
Typical Performance Characteristics .............................................7
Theory of Operation ...................................................................... 21
Applications Information ............................................................. 22
Recommended Bias Sequencing .............................................. 22
Outline Dimensions....................................................................... 23
Ordering Guide .......................................................................... 23
Applications ...................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description......................................................................... 1
Revision History ............................................................................... 2
Specifications .................................................................................... 3
0.4 GHz to 0.6 GHz Frequency Range ...................................... 3
0.6 GHz to 6 GHz Frequency Range ......................................... 3
6 GHz to 7.5 GHz Frequency Range ......................................... 3
DC Specifications ......................................................................... 4
Absolute Maximum Ratings ........................................................... 5
Thermal Resistance...................................................................... 5
REVISION HISTORY
9/2020—Revision 0: Initial Version
Rev. 0 | Page 2 of 23
Data Sheet
ADL8104
SPECIFICATIONS
0.4 GHz TO 0.6 GHz FREQUENCY RANGE
VDD = 5 V, total supply current (IDQ) = 150 mA, RBIAS = 90.9 Ω, and TA = 25°C, unless otherwise noted.
Table 1.
Parameter
Min Typ
0.4
Max Unit
Test Conditions/Comments
FREQUENCY RANGE
GAIN
0.6
GHz
dB
11.5 14
Gain Variation over Temperature
NOISE FIGURE
RETURN LOSS
Input
0.036
dB/°C
dB
3.5
12
13
dB
dB
Output
OUTPUT
OP1dB
16.5 19
dBm
dBm
dBm
dBm
%
Saturated Output Power (PSAT
OIP3
OIP2
)
21
32
50
18
Measurement taken at output power (POUT) per tone = 5 dBm
Measurement taken at POUT per tone = 5 dBm
Measured at PSAT
POWER ADDED EFFICIENCY (PAE)
0.6 GHz TO 6 GHz FREQUENCY RANGE
VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω, and TA = 25°C, unless otherwise noted.
Table 2.
Parameter
Min
0.6
12
Typ
Max
Unit
GHz
dB
Test Conditions/Comments
FREQUENCY RANGE
6
GAIN
15
Gain Variation over Temperature
0.030
3.5
dB/°C
dB
NOISE FIGURE
RETURN LOSS
Input
Output
OUTPUT
OP1dB
PSAT
12
12
dB
dB
17.5
20
21
32
52
12
dBm
dBm
dBm
dBm
%
OIP3
OIP2
Measurement taken at POUT per tone = 5 dBm
Measurement taken at POUT per tone = 5 dBm
Measured at PSAT
PAE
6 GHz TO 7.5 GHz FREQUENCY RANGE
VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω, and TA = 25°C, unless otherwise noted.
Table 3.
Parameter
Min
6
Typ
Max
Unit
GHz
dB
Test Conditions/Comments
FREQUENCY RANGE
GAIN
7.5
10
13
Gain Variation over Temperature
NOISE FIGURE
RETURN LOSS
Input
0.041
4.5
dB/°C
dB
12
12
dB
dB
Output
Rev. 0 | Page 3 of 23
ADL8104
Data Sheet
Parameter
OUTPUT
OP1dB
PSAT
OIP3
OIP2
Min
Typ
Max
Unit
Test Conditions/Comments
15.5
18
19
32
52
12
dBm
dBm
dBm
dBm
%
Measurement taken at POUT per tone = 5 dBm
Measurement taken at POUT per tone = 5 dBm
Measured at PSAT
PAE
DC SPECIFICATIONS
Table 4.
Parameter
SUPPLY CURRENT
IDQ
Min
Typ
Max
Unit
150
144
6
mA
mA
mA
Drain Current (IDD)
RBIAS Current (IRBIAS
SUPPLY VOLTAGE
VDD
)
3
5
5.5
V
Rev. 0 | Page 4 of 23
Data Sheet
ADL8104
ABSOLUTE MAXIMUM RATINGS
Table 5.
ELECTROSTATIC DISCHARGE (ESD) RATINGS
Parameter
Rating
6 V
25 dBm
2.03 W
The following ESD information is provided for handling of
ESD-sensitive devices in an ESD protected area only.
VDD
RF Input Power
Continuous Power Dissipation (PDISS), TA = 85°C
(Derate 22.57 mW/°C Above 85°C)
Temperature
Storage Range
Operating Range
Peak Reflow (Moisture Sensitivity Level 3
(MSL3))1
Junction to Maintain 1,000,000 Hours Mean
Time to Failure (MTTF)
Human body model (HBM) per ANSI/ESDA/JEDEC JS-001.
ESD Ratings for ADL8104
Table 7. ADL8104, 16-Lead LFCSP
−65°C to +150°C
−40°C to +85°C
260°C
ESD Model
Withstand Threshold (V)
Class
HBM
500
1B
ESD CAUTION
175°C
Nominal Junction (TA = 85°C, VDD = 5 V,
118.22°C
I
DQ = 150 mA)
1 See the Ordering Guide for more information.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the
operational section of this specification is not implied.
Operation beyond the maximum operating conditions for
extended periods may affect product reliability.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Close attention to
PCB thermal design is required.
θJC is the junction to case thermal resistance.
Table 6. Thermal Resistance
Package Type
θJC
Unit
CP-16-35
44.3
°C/W
Rev. 0 | Page 5 of 23
ADL8104
Data Sheet
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
GND
1
2
3
4
12 NC
11 RF
RF
IN
ADL8104
OUT
TOP VIEW
10
9
NC
NC
GND
NC
(Not to Scale)
NOTES
1. NO CONNECT. THESE PINS ARE NOT CONNECTED
INTERNALLY. THESE PINS MUST BE CONNECTED
TO THE RF AND DC GROUND.
2. EXPOSED PAD. THE EXPOSED PAD
MUST BE CONNECTED TO THE RF
AND DC GROUND.
Figure 2. Pin Configuration
Table 8. Pin Function Descriptions
Pin No.
1, 10
2
Mnemonic Description
GND
RFIN
Ground. The GND pin must be connected to the RF and dc ground. See Figure 6 for the interface schematic.
RF Input. The RFIN pin is ac-coupled and matched to 50 Ω. See Figure 4 for the interface schematic.
No Connect. These pins are not connected internally. These pins must be connected to the RF and dc ground.
RF Output. The RFOUT pin is ac-coupled and matched to 50 Ω. See Figure 5 for the interface schematic.
Drain Supply Voltage for the Amplifier. See Figure 5 for the interface schematic.
3 to 9, 12, 13, 16 NC
11
14
15
RFOUT
VDD
RBIAS
Current Mirror Bias Resistor. Use the RBIAS pin to set the quiescent current by connecting an external bias
resistor as defined in Table 9. Refer to Figure 87 for the bias resistor connection. See Figure 3 for the
interface schematic.
EPAD
Exposed Pad. The exposed pad must be connected to the RF and dc ground.
INTERFACE SCHEMATICS
V
R
DD
BIAS
RF
OUT
Figure 3. RBIAS Interface Schematic
Figure 5. VDD and RFOUT Interface Schematic
GND
RF
IN
Figure 4. RFIN Interface Schematic
Figure 6. GND Interface Schematic
Rev. 0 | Page 6 of 23
Data Sheet
ADL8104
TYPICAL PERFORMANCE CHARACTERISTICS
20
20
15
15
S22 (dB)
S21 (dB)
S11 (dB)
10
10
S22 (dB)
5
5
S21 (dB)
S11 (dB)
0
0
–5
–10
–15
–20
–5
–10
–15
–20
0
2
4
6
8
10
12
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 7. Gain and Return Loss vs. Frequency, 0.01 GHz to 12 GHz, VDD = 5 V,
IDQ = 150 mA, RBIAS = 90.9 Ω (S22 Is the Output Return Loss, S21 Is the Input
Return Loss, and S11 Is the Gain)
Figure 10. Gain and Return Loss vs. Frequency, 0.1 GHz to 1 GHz, VDD = 5 V,
IDQ = 150 mA, RBIAS = 90.9 Ω
18
16
14
12
10
8
18
16
14
12
10
8
6
6
+85°C
+25°C
–40°C
+85°C
4
4
+25°C
–40°C
2
2
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 8. Gain vs. Frequency for Various Temperatures, 0.3 GHz to 1 GHz,
VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω
Figure 11. Gain vs. Frequency for Various Temperatures, 1 GHz to 10 GHz,
VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω
18
16
14
12
10
18
16
14
12
10
8
8
5.5V = 155mA
5.5V = 155mA
6
4
2
0
6
4
2
0
5.0V = 150mA
4.5V = 120mA
4.0V = 105mA
3.5V = 88mA
3.0V = 70mA
5.0V = 150mA
4.5V = 120mA
4.0V = 105mA
3.5V = 88mA
3.0V = 70mA
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 9. Gain vs. Frequency for Various VDD and IDQ Values,
0.3 GHz to 1 GHz, RBIAS = 90.9 Ω
Figure 12. Gain vs. Frequency for Various VDD and IDQ Values,
1 GHz to 10 GHz, RBIAS = 90.9 Ω
Rev. 0 | Page 7 of 23
ADL8104
Data Sheet
18
16
14
12
10
8
18
16
14
12
10
8
1180Ω = 100mA
440Ω = 125mA
90.9Ω = 150mA
0Ω = 165mA
1180Ω = 100mA
440Ω = 125mA
90.9Ω = 150mA
0Ω = 165mA
6
6
4
4
2
2
0
0.3
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 13. Gain vs. Frequency for Various RBIAS and IDQ Values,
0.3 GHz to 1 GHz, VDD = 5 V
Figure 16. Gain vs. Frequency for Various RBIAS and IDQ Values,
1 GHz to 10 GHz, VDD = 5 V
0
0
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
–5
–5
–10
–10
–15
–20
–15
–20
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 14. Input Return Loss vs. Frequency for Various Temperatures,
0.3 GHz to 1 GHz, VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω
Figure 17. Input Return Loss vs. Frequency for Various Temperatures,
1 GHz to 10 GHz, VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω
0
0
5.5V = 155mA
5.0V = 150mA
4.5V = 120mA
5.5V = 155mA
5.0V = 150mA
4.5V = 120mA
4.0V = 105mA
4.0V = 105mA
–5
–5
3.5V = 88mA
3.0V = 70mA
3.5V = 88mA
3.0V = 70mA
–10
–10
–15
–15
–20
–20
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 15. Input Return Loss vs. Frequency for Various VDD and IDQ Values,
0.3 GHz to 1 GHz, RBIAS = 90.9 Ω
Figure 18. Input Return Loss vs. Frequency for Various VDD and IDQ Values,
1 GHz to 10 GHz, RBIAS = 90.9 Ω
Rev. 0 | Page 8 of 23
Data Sheet
ADL8104
0
0
–5
1180Ω = 100mA
1180Ω = 100mA
440Ω = 125mA
90.9Ω = 150mA
0Ω = 165mA
440Ω = 125mA
90.9Ω = 150mA
0Ω = 165mA
–5
–10
–15
–20
–10
–15
–20
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 19. Input Return Loss vs. Frequency for Various RBIAS and IDQ Values,
0.3 GHz to 1 GHz, VDD = 5 V
Figure 22. Input Return Loss vs. Frequency for Various RBIAS and IDQ Values,
1 GHz to 10 GHz, VDD = 5 V
0
0
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
–5
–10
–15
–20
–5
–10
–15
–20
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 20. Output Return Loss vs. Frequency for Various Temperatures, 0.3 GHz
to 1 GHz, VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω
Figure 23. Output Return Loss vs. Frequency for Various Temperatures, 1 GHz to
10 GHz, VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω
0
0
5.5V = 155mA
5.0V = 150mA
4.5V = 120mA
5.5V = 155mA
5.0V = 150mA
4.5V = 120mA
4.0V = 105mA
4.0V = 105mA
–5
–5
3.5V = 88mA
3.0V = 70mA
3.5V = 88mA
3.0V = 70mA
–10
–10
–15
–20
–15
–20
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 21. Output Return Loss vs. Frequency for Various VDD and IDQ Values,
0.3 GHz to 1 GHz, RBIAS = 90.9 Ω
Figure 24. Output Return Loss vs. Frequency for Various VDD and IDQ Values,
1 GHz to 10 GHz, RBIAS = 90.9 Ω
Rev. 0 | Page 9 of 23
ADL8104
Data Sheet
0
0
–5
1180Ω = 100mA
440Ω = 125mA
90.9Ω = 150mA
0Ω = 165mA
1180Ω = 100mA
440Ω = 125mA
90.9Ω = 150mA
0Ω = 165mA
–5
–10
–15
–10
–15
–20
–20
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 25. Output Return Loss vs. Frequency for Various RBIAS and IDQ Values,
0.3 GHz to 1 GHz, VDD = 5 V
Figure 28. Output Return Loss vs. Frequency for Various RBIAS and IDQ Values,
1 GHz to 10 GHz, VDD = 5 V
0
0
+85°C
+85°C
–5
–5
+25°C
+25°C
–40°C
–40°C
–10
–10
–15
–20
–25
–30
–35
–40
–15
–20
–25
–30
–35
–40
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 26. Reverse Isolation vs. Frequency for Various Temperatures, 0.3 GHz
to 1 GHz, VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω
Figure 29. Reverse Isolation vs. Frequency for Various Temperatures, 1 GHz
to 10 GHz, VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω
0
0
5.5V = 155mA
5.5V = 155mA
–5
–10
–5
–10
5.0V = 150mA
4.5V = 120mA
5.0V = 150mA
4.5V = 120mA
4.0V = 105mA
3.5V = 88mA
3.0V = 70mA
4.0V = 105mA
3.5V = 88mA
3.0V = 70mA
–15
–20
–25
–30
–35
–40
–15
–20
–25
–30
–35
–40
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 27. Reverse Isolation vs. Frequency for Various VDD and IDQ Values,
0.3 GHz to 1 GHz, RBIAS = 90.9 Ω
Figure 30. Reverse Isolation vs. Frequency for Various VDD and IDQ Values,
1 GHz to 10 GHz, RBIAS = 90.9 Ω
Rev. 0 | Page 10 of 23
Data Sheet
ADL8104
0
0
–5
1180Ω = 100mA
1180Ω = 100mA
440Ω = 125mA
90.9Ω = 150mA
0Ω = 165mA
440Ω = 125mA
90.9Ω = 150mA
0Ω = 165mA
–5
–10
–15
–20
–25
–30
–35
–40
–10
–15
–20
–25
–30
–35
–40
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 31. Reverse Isolation vs. Frequency for Various RBIAS and IDQ Values,
0.3 GHz to 1 GHz, VDD = 5 V
Figure 34. Reverse Isolation vs. Frequency for Various RBIAS and IDQ Values,
1 GHz to 10 GHz, VDD = 5 V
10
10
9
8
7
6
5
4
3
2
1
0
+85°C
+25°C
–40°C
9
8
7
6
5
4
3
2
1
0
+85°C
+25°C
–40°C
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
2
4
6
8
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 32. Noise Figure vs. Frequency for Various Temperatures, 0.3 GHz to
1 GHz, VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω
Figure 35. Noise Figure vs. Frequency for Various Temperatures, 1 GHz to
10 GHz, VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω
10
10
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
5.5V = 155mA
5.0V = 150mA
4.5V = 120mA
4.0V = 105mA
3.5V = 88mA
3.0V = 70mA
5.5V = 155mA
5.0V = 150mA
4.5V = 120mA
4.0V = 105mA
3.5V = 88mA
3.0V = 70mA
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 33. Noise Figure vs. Frequency for Various VDD and IDQ Values, 0.3 GHz
to 1 GHz, RBIAS = 90.9 Ω
Figure 36. Noise Figure vs. Frequency for Various VDD and IDQ Values, 1 GHz
to 10 GHz, RBIAS = 90.9 Ω
Rev. 0 | Page 11 of 23
ADL8104
Data Sheet
10
9
8
7
6
5
4
3
2
1
10
9
8
7
6
5
4
3
2
1
0
1180Ω = 100mA
440Ω = 125mA
90.9Ω = 150mA
0Ω = 165mA
1180Ω = 100mA
440Ω = 125mA
90.9Ω = 150mA
0Ω = 165mA
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 37. Noise Figure vs. Frequency for Various RBIAS and IDQ Values, 0.3 GHz
to 1 GHz, VDD = 5 V
Figure 40. Noise Figure vs. Frequency for Various RBIAS and IDQ Values, 1 GHz
to 10 GHz, VDD = 5 V
28
24
20
16
12
28
24
20
16
12
+85°C
+25°C
–40°C
8
8
+85°C
+25°C
–40°C
4
4
0
0
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 38. OP1dB vs. Frequency for Various Temperatures, 0.35 GHz to
10 GHz, VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω
Figure 41. PSAT vs. Frequency for Various Temperatures, 0.35 GHz to 10 GHz,
VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω
28
24
20
16
12
28
24
20
16
12
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
8
4
0
8
4
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 39. OP1dB vs. Frequency for Various Temperatures, 0.35 GHz to
1 GHz, VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω
Figure 42. OP1dB vs. Frequency for Various Temperatures, 1 GHz to 10 GHz,
VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω
Rev. 0 | Page 12 of 23
Data Sheet
ADL8104
28
24
20
16
12
28
24
20
16
12
8
5.5V = 155mA
5.5V = 155mA
5.0V = 150mA
4.5V = 120mA
4.0V = 105mA
3.5V = 88mA
3.0V = 70mA
5.0V = 150mA
4.5V = 120mA
4.0V = 105mA
3.5V = 88mA
3.0V = 70mA
8
4
0
4
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 43. OP1dB vs. Frequency for Various VDD and IDQ Values, 0.35 GHz to
1 GHz, RBIAS = 90.9 Ω
Figure 46. OP1dB vs. Frequency for Various VDD and IDQ Values, 1 GHz to
10 GHz, RBIAS = 90.9 Ω
28
24
20
16
12
28
24
20
16
12
1180Ω = 100mA
440Ω = 125mA
90.9Ω = 150mA
0Ω = 165mA
1180Ω = 100mA
440Ω = 125mA
90.9Ω = 150mA
0Ω = 165mA
8
4
0
8
4
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 44. OP1dB vs. Frequency for Various RBIAS and IDQ Values, 0.35 GHz to
1 GHz, VDD = 5 V
Figure 47. OP1dB vs. Frequency for Various RBIAS and IDQ Values, 1 GHz to
10 GHz, VDD = 5 V
28
24
20
16
28
24
20
16
12
12
+85°C
+85°C
+25°C
+25°C
8
8
–40°C
–40°C
4
0
4
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 45. PSAT vs. Frequency for Various Temperatures, 0.35 GHz to 1 GHz,
VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω
Figure 48. PSAT vs. Frequency for Various Temperatures, 1 GHz to 10 GHz,
VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω
Rev. 0 | Page 13 of 23
ADL8104
Data Sheet
28
24
20
16
12
8
28
24
20
16
12
8
5.5V = 155mA
5.0V = 150mA
4.5V = 120mA
4.0V = 105mA
3.5V = 88mA
3.0V = 70mA
5.5V = 155mA
5.0V = 150mA
4.5V = 120mA
4.0V = 105mA
3.5V = 88mA
3.0V = 70mA
4
4
0
0.3
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 49. PSAT vs. Frequency for Various VDD and IDQ Values, 0.35 GHz to
1 GHz, RBIAS = 90.9 Ω
Figure 52. PSAT vs. Frequency for Various VDD and IDQ Values, 1 GHz to 10 GHz,
RBIAS = 90.9 Ω
28
24
20
16
12
28
24
20
16
12
1180Ω = 100mA
440Ω = 125mA
1180Ω = 100mA
440Ω = 125mA
8
8
90.9Ω = 150mA
90.9Ω = 150mA
0Ω = 165mA
0Ω = 165mA
4
4
0
0.3
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 50. PSAT vs. Frequency for Various RBIAS and IDQ Values, 0.35 GHz to
1 GHz, VDD = 5 V
Figure 53. PSAT vs. Frequency for Various RBIAS and IDQ Values, 1 GHz to
10 GHz, VDD = 5 V
24
20
16
12
8
24
+85°C
+25°C
20
–40°C
16
12
8
+85°C
+25°C
–40°C
4
4
0
0.3
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 51. PAE vs. Frequency for Various Temperatures, 0.35 GHz to 1 GHz,
VDD = 5 V, IDQ = 150 mA, RBIAS = 90 Ω
Figure 54. PAE vs. Frequency for Various Temperatures, 1 GHz to 10 GHz,
VDD = 5 V, IDQ = 150 mA, RBIAS = 90 Ω
Rev. 0 | Page 14 of 23
Data Sheet
ADL8104
24
20
16
12
8
24
20
16
12
8
5.5V = 155mA
5.0V = 150mA
4.5V = 120mA
4.0V = 105mA
3.5V = 88mA
3.0V = 70mA
5.5V = 155mA
5.0V = 150mA
4.5V = 120mA
4.0V = 105mA
3.5V = 88mA
3.0V = 70mA
4
4
0
0.3
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 55. PAE vs. Frequency for Various VDD and IDQ Values, 0.35 GHz to
1 GHz, RBIAS = 90.9 Ω
Figure 58. PAE vs. Frequency for Various VDD and IDQ Values, 1 GHz to 10 GHz,
RBIAS = 90.9 Ω
24
20
16
24
1180Ω = 100mA
440Ω = 125mA
90.9Ω = 150mA
0Ω = 165mA
20
16
12
8
12
1180Ω = 100mA
8
4
0
440Ω = 125mA
90.9Ω = 150mA
0Ω = 165mA
4
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 56. PAE vs. Frequency for Various RBIAS and IDQ Values, 0.3 GHz to
1 GHz, VDD = 5 V
Figure 59. PAE vs. Frequency for Various RBIAS and IDQ Values, 1 GHz to
10 GHz, VDD = 5 V
24
20
16
12
8
205
195
185
175
165
155
145
25
20
15
10
5
240
220
200
180
160
140
P
GAIN
PAE
OUT
P
OUT
GAIN
PAE
I
DD
I
DD
4
0
–16
0
–16
–13
–10
–7
–4
–1
2
5
8
–12
–8
–4
0
4
8
12
INPUT POWER (dBm)
INPUT POWER (dBm)
Figure 60. POUT, Gain, PAE, and IDD vs. Input Power,
Power Compression at 2 GHz, VDD = 5 V, RBIAS = 90.9 Ω
Figure 57. POUT, Gain, PAE, and IDD vs. Input Power,
Power Compression at 0.4 GHz, VDD = 5 V, RBIAS = 90.9 Ω
Rev. 0 | Page 15 of 23
ADL8104
Data Sheet
25
195
185
175
165
155
145
20
16
12
8
165
P
GAIN
PAE
P
OUT
GAIN
PAE
I
DD
OUT
20
15
10
5
I
DD
160
155
150
4
0
–16
0
–14
145
10
–12
–8
–4
0
4
8
12
–10
–6
–2
2
6
INPUT POWER (dBm)
INPUT POWER (dBm)
Figure 61. POUT, Gain, PAE, and IDD vs. Input Power,
Power Compression at 5 GHz, VDD = 5 V, RBIAS = 90.9 Ω
Figure 64. POUT, Gain, PAE, and IDD vs. Input Power,
Power Compression at 7 GHz, VDD = 5 V, RBIAS = 90.9 Ω
25
20
15
10
5
25
20
15
10
5
215
270
240
210
180
150
120
195
175
155
135
115
OP1dB
GAIN
OP1dB
GAIN
P
SAT
P
SAT
I
DD
I
DD
0
3.0
0
3.0
3.5
4.0
4.5
5.0
5.5
3.5
4.0
4.5
5.0
5.5
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Figure 62. OP1dB, Gain, PSAT, and IDD (Measured at PSAT) vs. Supply Voltage,
Power Compression at 0.4 GHz, RBIAS = 90.9 Ω
Figure 65. OP1dB, Gain, PSAT, and IDD (Measured at PSAT) vs. Supply Voltage,
Power Compression at 2 GHz, RBIAS = 90.9 Ω
25
20
15
10
5
215
195
175
155
135
115
25
20
15
10
5
210
185
160
135
110
85
OP1dB
GAIN
OP1dB
GAIN
P
SAT
P
SAT
I
DD
I
DD
0
0
3.0
3.5
4.0
4.5
5.0
5.5
3.0
3.5
4.0
4.5
5.0
5.5
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Figure 63. OP1dB, Gain, PSAT, and IDD (Measured at PSAT) vs. Supply Voltage,
Power Compression at 5 GHz, RBIAS = 90.9 Ω
Figure 66. OP1dB, Gain, PSAT, and IDD (Measured at PSAT) vs. Supply Voltage,
Power Compression at 7 GHz, RBIAS = 90.9 Ω
Rev. 0 | Page 16 of 23
Data Sheet
ADL8104
1.0
0.9
0.8
0.7
40
35
30
25
20
15
10
5
5dBm
2dBm
0dBm
7GHz
3GHz
2GHz
1GHz
6GHz
5GHz
4GHz
0.6
0.5
–15
0
–12
–9
–6
–3
0
3
6
9
12
0
1
2
3
4
5
6
7
8
9
10
INPUT POWER (dBm)
FREQUENCY (GHz)
Figure 67. PDISS vs. Input Power at TA = 85°C, VDD = 5 V, IDQ = 150 mA,
RBIAS = 90.9 Ω
Figure 70. OIP3 vs. Frequency for Various POUT per Tone, VDD = 5 V, RBIAS = 90.9 Ω,
IDQ = 150 mA
40
35
30
25
20
40
35
30
25
20
15
15
+85°C
+25°C
–40°C
+85°C
+25°C
–40°C
10
5
10
5
0
0.3
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 68. OIP3 vs. Frequency for Various Temperatures, 0.35 GHz to 1 GHz,
VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω, POUT per Tone = 5 dBm
Figure 71. OIP3 vs. Frequency for Various Temperatures, 1 GHz to 10 GHz,
VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω, POUT per Tone = 5 dBm
40
35
30
25
20
40
35
30
25
20
15
10
5
15
10
5
5.5V = 155mA
5.0V = 150mA
4.5V = 120mA
4.0V = 105mA
3.5V = 88mA
3.0V = 70mA
5.5V = 155mA
5.0V = 150mA
4.5V = 120mA
4.0V = 105mA
3.5V = 88mA
3.0V = 70mA
0
0.3
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 69. OIP3 vs. Frequency for Various VDD and IDQ Values, 0.3 GHz to
1 GHz, VDD = 5 V, POUT per Tone = 5 dBm
Figure 72. OIP3 vs. Frequency for Various VDD and IDQ Values, 1 GHz to
10 GHz, VDD = 5 V, POUT per Tone = 5 dBm
Rev. 0 | Page 17 of 23
ADL8104
Data Sheet
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
1180Ω = 100mA
440Ω = 125mA
90.9Ω = 150mA
0Ω = 165mA
1180Ω = 100mA
440Ω = 125mA
90.9Ω = 150mA
0Ω = 165mA
0
0.3
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 73. OIP3 vs. Frequency for Various RBIAS and IDQ Values, 0.3 GHz to
1 GHz, VDD = 5 V, POUT per Tone = 5 dBm
Figure 76. OIP3 vs. Frequency for Various RBIAS and IDQ Values, 1 GHz to
10 GHz, VDD = 5 V, POUT per Tone = 5 dBm
70
60
50
40
30
70
60
50
40
30
5dBm
20
5dBm
20
2dBm
0dBm
2dBm
0dBm
10
0
10
0
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 74. Third-Order Intermodulation Distortion Relative to Carrier (IMD3)
vs. Frequency for Various POUT per Tone, VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω
Figure 77. OIP2 vs. Frequency for Various POUT per Tone, VDD = 5 V,
IDQ = 150 mA, RBIAS = 90.9 Ω
70
60
50
40
70
60
50
40
30
30
+85°C
+85°C
20
20
+25°C
+25°C
–40°C
–40°C
10
10
0
0.3
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 75. OIP2 vs. Frequency for Various Temperatures, 0.35 GHz to 1 GHz,
VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω, POUT per Tone = 5 dBm
Figure 78. OIP2 vs. Frequency for Various Temperatures, 1 GHz to 10 GHz,
VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω, POUT per Tone = 5 dBm
Rev. 0 | Page 18 of 23
Data Sheet
ADL8104
70
60
50
40
30
250
200
150
100
1GHz
2GHz
3GHz
4GHz
5GHz
6GHz
7GHz
5.5V = 155mA
5.0V = 150mA
4.5V = 120mA
4.0V = 105mA
3.5V = 88mA
3.0V = 70mA
20
10
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
–16
–12
–8
–4
0
4
8
12
FREQUENCY (GHz)
INPUT POWER (dBm)
Figure 79. OIP2 vs. Frequency for Various VDD and IDQ Values, 0.35 GHz to
1 GHz, RBIAS = 90.9 Ω, POUT per Tone = 5 dBm
Figure 81. IDQ vs. Input Power for Various Frequencies, VDD = 5 V, RBIAS = 90.9 Ω
70
60
50
40
70
60
50
40
30
30
5.5V = 155mA
5.0V = 150mA
4.5V = 120mA
4.0V = 105mA
3.5V = 88mA
3.0V = 70mA
1180Ω = 100mA
440Ω = 125mA
20
20
10
0
90.9Ω = 150mA
0Ω = 165mA
10
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 80. OIP2 vs. Frequency for Various RBIAS and IDQ Values, 0.3 GHz to
1 GHz, VDD = 5 V, POUT per Tone = 5 dBm
Figure 82. OIP2 vs. Frequency for Various VDD and IDQ Values, 1 GHz to
10 GHz, RBIAS = 90.9 Ω, POUT per Tone = 5 dBm
Rev. 0 | Page 19 of 23
ADL8104
Data Sheet
180
150
120
90
70
60
50
40
30
20
10
0
1180Ω = 100mA
440Ω = 125mA
90.9Ω = 150mA
0Ω = 165mA
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
BIAS RESISTOR VALUE (kΩ)
FREQUENCY (GHz)
Figure 85. IDQ vs. Bias Resistor Value, VDD = 5 V
Figure 83. OIP2 vs. Frequency for Various RBIAS and IDQ Values, 1 GHz to
10 GHz, VDD = 5 V, POUT per Tone = 5 dBm
230
210
190
170
150
130
110
90
70
50
30
10
–10
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
SUPPLY VOLTAGE (V)
Figure 84. IDQ vs. Supply Voltage, RBIAS = 90.9 Ω
Rev. 0 | Page 20 of 23
Data Sheet
ADL8104
THEORY OF OPERATION
The ADL8104 is a GaAs, MMIC, pHEMT, low noise wideband
amplifier with integrated ac-coupling capacitors and a bias
inductor. Figure 86 shows a simplified schematic.
components are required. To adjust the quiescent current,
connect an external resistor between the RBIAS and VDD pins.
R
V
BIAS
DD
The ADL8104 has ac-coupled, single-ended input and output
ports with impedances that are nominally equal to 50 Ω over
the 0.4 GHz to 7.5 GHz frequency range. No external matching
RF
RF
OUT
IN
Figure 86. Simplified Schematic
Rev. 0 | Page 21 of 23
ADL8104
Data Sheet
APPLICATIONS INFORMATION
The basic connections for operating the ADL8104 over the
specified frequency range are shown in Figure 87. No external
biasing inductor is required, allowing the 5 V supply to be
connected to the VDD pin. The 1 µF and 1000 pF power supply
decoupling capacitors are recommended. The power supply
decoupling capacitors shown in Figure 87 represent the
configuration used to characterize and qualify the ADL8104.
RECOMMENDED BIAS SEQUENCING
See the ADL8104-EVALZ user guide for the recommended bias
sequencing information.
Table 9. Recommended Bias Resistor Values
RBIAS (Ω)
IDQ (mA)
IDD (mA)
157.3
144
IRBIAS (mA)
0
90
165
150
7.7
6
5
To set IDQ, connect a resistor, R1, between the RBIAS and VDD pins. A
default value of 90.9 Ω is recommended, which results in a
nominal IDQ of 150 mA. Table 9 shows how the IDQ and IDD varies
vs. the bias resistor value. The RBIAS pin also draws a current
that varies with the value of RBIAS (see Table 9). Do not leave the
440
1180
125
100
120
97
3
RBIAS pin open.
V
DD
C2
1000pF
C3
1µF
GND
R1
90.9Ω
C3
1000pF
GND
16 15 14 13
1
2
3
4
12
GND
RF
11
10
9
RF
OUT
IN
GND
ADL8104
5
6
7
8
Figure 87. Typical Application Circuit
Rev. 0 | Page 22 of 23
Data Sheet
ADL8104
OUTLINE DIMENSIONS
DETAIL A
(JEDEC 95)
3.10
3.00 SQ
2.90
0.32
0.25
0.20
PIN 1
INDICATOR
AREA
PIN 1
16
13
IONS
INDICATOR AR EA OP T
(SEE DETAIL A)
0.50
BSC
1
12
1.80
1.70 SQ
1.60
EXPOSED
PAD
4
9
8
5
0.50
0.40
0.25
0.20 MIN
TOP VIEW
SIDE VIEW
BOTTOM VIEW
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
0.80
0.75
0.70
0.05 MAX
0.02 NOM
COPLANARITY
0.08
SECTION OF THIS DATA SHEET.
SEATING
PLANE
0.20 REF
COMPLIANT TO JEDEC STANDARDS MO-220-WEED-2
Figure 88. 16-Lead Lead Frame Chip Scale Package [LFCSP]
3 mm × 3 mm Body and 0.75 mm Package Height
(CP-16-35)
Dimensions shown in millimeters
ORDERING GUIDE
Model1, 2
ADL8104ACPZN
ADL8104ACPZN-R7
ADL8104-EVALZ
Temperature Range
−40°C to +85°C
−40°C to +85°C
MSL Rating3
MSL3
Package Description4
Package Option
CP-16-35
CP-16-35
16-Lead Lead Frame Chip Scale Package [LFCSP]
16-Lead Lead Frame Chip Scale Package [LFCSP]
Evaluation Board
MSL3
1 The ADL8104ACPZN, ADL8104ACPZN-R7, and ADL8104-EVALZ are RoHS compliant parts.
2 When ordering the evaluation board only, reference the model number, ADL8104-EVALZ.
3 See the Absolute Maximum Ratings section for additional information.
4 The lead finish of the ADL8104ACPZN and ADL8104ACPZN-R7 is nickel palladium gold (NiPdAu).
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