ADL5350ACPZ_技术文档

LF to 4 GHz

High Linearity Y-Mixer

ADL5350

FEATURES

FUNCTIONAL BLOCK DIAGRAM

Broadband radio frequency (RF), intermediate frequency (IF),

and local oscillator (LO) ports

Conversion loss: 6.8 dB

GND

RF

INPUT OR

OUTPUT

IF

OUTPUT OR

INPUT

ADL5350

RF

IF

Noise figure: 6.5 dB

High input IP3: 25 dBm

High input P1dB: 19 dBm

Low LO drive level

3V

GND

VPOS

Single-ended design: no need for baluns

Single-supply operation: 3 V @ 19 mA

Miniature, 2 mm × 3 mm, 8-lead LFCSP

RoHS compliant

LO

INPUT

Figure 1.

APPLICATIONS

Cellular base stations

Point-to-point radio links

RF instrumentation

GENERAL DESCRIPTION

The ADL5350 is a high linearity, up-and-down converting

mixer capable of operating over a broad input frequency range.

It is well suited for demanding cellular base station mixer designs

that require high sensitivity and effective blocker immunity. Based

on a GaAs pHEMT, single-ended mixer architecture, the ADL5350

provides excellent input linearity and low noise figure without

the need for a high power level LO drive.

The high input linearity of the ADL5350 makes the device an

excellent mixer for communications systems that require high

blocker immunity, such as GSM 850 MHz/900 MHz and

800 MHz CDMA2000. At 2 GHz, a slightly greater supply

current is required to obtain similar performance.

The single-ended broadband RF/IF port allows the device to be

customized for a desired band of operation using simple external

filter networks. The LO-to-RF isolation is based on the LO

rejection of the RF port filter network. Greater isolation can be

achieved by using higher order filter networks, as described in

the Applications Information section.

In 850 MHz/900 MHz receive applications, the ADL5350

provides a typical conversion loss of only 6.7 dB. The input IP3

is typically greater than 25 dBm, with an input compression

point of 19 dBm. The integrated LO amplifier allows a low LO

drive level, typically only 4 dBm for most applications.

The ADL5350 is fabricated on a GaAs pHEMT, high performance

IC process. The ADL5350 is available in a 2 mm × 3 mm, 8-lead

LFCSP. It operates over a −40°C to +85°C temperature range.

An evaluation board is also available.

Rev. 0

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registeredtrademarks arethe property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

Fax: 781.461.3113

www.analog.com

ADL5350

TABLE OF CONTENTS

Features .............................................................................................. 1

Typical Performance Characteristics ..............................................7

850 MHz Characteristics..............................................................7

1950 MHz Characteristics......................................................... 12

Functional Description.................................................................. 17

Circuit Description .................................................................... 17

Implementation Procedure ....................................................... 17

Applications Information.............................................................. 19

Low Frequency Applications .................................................... 19

High Frequency Applications................................................... 19

Evaluation Board ............................................................................ 21

Outline Dimensions....................................................................... 22

Ordering Guide .......................................................................... 22

Applications....................................................................................... 1

Functional Block Diagram .............................................................. 1

General Description......................................................................... 1

Revision History ............................................................................... 2

Specifications..................................................................................... 3

850 MHz Receive Performance .................................................. 3

1950 MHz Receive Performance ................................................ 3

Spur Tables......................................................................................... 4

850 MHz Spur Table..................................................................... 4

1950 MHz Spur Table................................................................... 4

Absolute Maximum Ratings............................................................ 5

ESD Caution.................................................................................. 5

Pin Configuration and Function Descriptions............................. 6

REVISION HISTORY

2/08—Revision 0: Initial Version

Rev. 0 | Page 2 of 24

ADL5350

SPECIFICATIONS

850 MHz RECEIVE PERFORMANCE

V_S= 3 V, T_A= 25°C, LO power = 4 dBm, re: 50 Ω, unless otherwise noted.

Table 1.

Parameter

Min

750

500

30

Typ

850

780

70

6.7

6.4

25

Max

975

945

250

Unit

MHz

dB

Conditions

RF Frequency Range

LO Frequency Range

IF Frequency Range

Conversion Loss

SSB Noise Figure

Input Third-Order Intercept (IP3)

Low-side LO

f_RF= 850 MHz, f_LO= 780 MHz, f_IF= 70 MHz

f_RF1= 849 MHz, f_RF2= 850 MHz, f_LO= 780 MHz, f_IF= 70 MHz;

each RF tone 0 dBm

dB

dBm

Input 1dB Compression Point (P1dB)

LO-to-IF Leakage

LO-to-RF Leakage

RF-to-IF Leakage

IF/2 Spurious

Supply Voltage

19.8

29

13

19.5

−50

3

dBm

dBc

V

f_RF= 820 MHz, f_LO= 750 MHz, f_IF= 70 MHz

LO power = 4 dBm, f_LO= 780 MHz

RF power = 0 dBm, f_RF= 850 MHz, f_LO= 780 MHz

2.7

3.5

Supply Current

16.5

mA

LO power = 4 dBm

1950 MHz RECEIVE PERFORMANCE

V_S= 3 V, T_A= 25°C, LO power = 6 dBm, re: 50 Ω, unless otherwise noted.

Table 2.

Parameter

Min

Typ

Max

Unit

Conditions

RF Frequency Range

LO Frequency Range

IF Frequency Range

Conversion Loss

SSB Noise Figure

Input Third-Order Intercept (IP3)

1800 1950 2050 MHz

1420 1760 2000 MHz

Low-side LO

50

190

6.8

6.5

25

380

MHz

dB

f_RF= 1950 MHz, f_LO= 1760 MHz, f_IF= 190 MHz

f_RF1= 1949 MHz, f_RF2= 1951 MHz, f_LO= 1760 MHz, f_IF= 190 MHz;

each RF tone 0 dBm

dB

dBm

Input 1dB Compression Point (P1dB)

LO-to-IF Leakage

LO-to-RF Leakage

RF-to-IF Leakage

IF/2 Spurious

Supply Voltage

19

dBm

dBc

V

f_RF= 1950 MHz, f_LO= 1760 MHz, f_IF= 190 MHz

LO power = 6 dBm, f_LO= 1760 MHz

RF power = 0 dBm, f_RF= 1950 MHz, f_LO= 1760 MHz

13.5

10.5

11.5

−54

3

2.7

3.5

Supply Current

19

mA

LO power = 6 dBm

Rev. 0 | Page 3 of 24

ADL5350

SPUR TABLES

All spur tables are (N × f_RF) − (M × f_LO) mixer spurious products for 0 dBm input power, unless otherwise noted. N.M. indicates that a

spur was not measured due to it being at a frequency >6 GHz.

850 MHz SPUR TABLE

Table 3.

M

0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

0

1

2

3

4

5

6

7

≤–100

–21.6

–50.0

–74.8

≤–100

N.M.

–20.6

–5.6

–19.2

–23.6

–50.5

–71.8

–91.6

≤–100

N.M.

–15.3

–19.6

–59.8

–68.1

–96.1

≤–100

N.M.

–16.7

–31.9

–49.1

–70.2

–92.7

≤–100

N.M.

–38.4

–28.7

–57.5

–67.4

–98.7

≤–100

N.M.

–26.6

–46.1

–51.0

–66.9

–90.2

≤–100

N.M.

–22.1

–48.5

–77.7

–70.8

–91.7

≤–100

N.M.

≤–100

N.M.

≤–100

–33.2

–65.8

–85.2

–88.8

–99.5

≤–100

N.M.

–69.2

–66.0

–92.6

≤–100

N.M.

–60.8

–87.3

≤–100

–72.2

≤–100

–91.7

≤–100

–88.6

≤–100

N.M.

≤–100

N

8

9

10

11

12

13

14

15

N.M.

1950 MHz SPUR TABLE

Table 4.

M

0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

0

1

2

3

4

5

6

7

≤–100

–10.8

–48.2

–72.3

N.M.

–13.1

–7.0

–61.2

–71.4

N.M.

–32.8

–25.3

–41.2

–83.6

–91.4

N.M.

–22.4

–27.7

–44.6

–64.5

–84.2

–90.8

N.M.

–33.9

–47.0

–62.4

–78.3

–82.3

≤–100

N.M.

–74.6

–64.3

–76.5

–77.1

≤–100

N.M.

–83.7

–80.0

–79.5

–93.4

≤–100

N.M.

–92.0

–83.8

–94.5

–94.0

≤–100

N.M.

–95.2

≤–100

–96.4

≤–100

N.M.

–99.2

≤–100

N.M.

≤–100

N.M.

≤–100

N.M.

≤–100

N.M.

≤–100

N.M.

≤–100

N.M.

≤–100

N

8

9

10

11

12

13

14

15

N.M.

Rev. 0 | Page 4 of 24

ADL5350

ABSOLUTE MAXIMUM RATINGS

Table 5.

Parameter

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

Rating

Supply Voltage, V_S

RF Input Level

LO Input Level

Internal Power Dissipation

θ_JA

Maximum Junction Temperature

Operating Temperature Range

Storage Temperature Range

4.0 V

23 dBm

20 dBm

324 mW

154.3°C/W

135°C

−40°C to +85°C

−65°C to +150°C

ESD CAUTION

Rev. 0 | Page 5 of 24

ADL5350

PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

RF/IF 1

GND2

LOIN 3

NC

8 RF/IF

7 NC

2

ADL5350

TOP VIEW

6 VPOS

5 GND1

(Not to Scale)

4

NC = NO CONNECT

Figure 2. Pin Configuration

Table 6. Pin Function Descriptions

Pin No.

Mnemonic

Description

1, 8

RF/IF

RF and IF Input/Output Ports. These nodes are internally tied together. RF and IF port separation is

achieved using external tuning networks.

2, 5, Paddle

GND2, GND1, GND

Device Common (DC Ground).

3

4, 7

6

LOIN

NC

VPOS

LO Input. Needs to be ac-coupled.

No Connect. Grounding NC pins is recommended.

Positive Supply Voltage for the Drain of the LO Buffer. A series RF choke is needed on the supply line

to provide proper ac loading of the LO buffer amplifier.

Rev. 0 | Page 6 of 24

ADL5350

TYPICAL PERFORMANCE CHARACTERISTICS

850 MHz CHARACTERISTICS

Supply voltage = 3 V, RF frequency = 850 MHz, IF frequency = 70 MHz, RF level = 0 dBm, LO level = 4 dBm, T_A= 25°C, unless otherwise noted.

20

19

18

17

16

15

14

13

12

11

10

23

22

21

20

19

18

17

16

15

14

13

–40

–20

0

20

40

60

80

–40

–20

0

20

40

60

80

TEMPERATURE (°C)

Figure 3. Supply Current vs. Temperature

Figure 6. Input P1dB vs. Temperature

10

9

8

7

6

5

4

3

2

1

0

22

20

18

16

14

12

10

+25°C

–40°C +85°C

–40

–20

0

20

40

60

2.7

2.8

2.9

3.0

3.1

3.2

3.3

3.4

3.5

TEMPERATURE (°C)

SUPPLY VOLTAGE (V)

Figure 4. Conversion Loss vs. Temperature

Figure 7. Supply Current vs. Supply Voltage

28

27

26

25

24

23

22

21

20

19

18

7.4

7.2

7.0

6.8

6.6

6.4

6.2

6.0

+85°C

+25°C

–40°C

–40

–20

0

20

40

60

2.7

2.8

2.9

3.0

3.1

3.2

3.3

3.4

3.5

TEMPERATURE (°C)

SUPPLY VOLTAGE (V)

Figure 5. Input IP3 (IIP3) vs. Temperature

Figure 8. Conversion Loss vs. Supply Voltage

Rev. 0 | Page 7 of 24

ADL5350

Supply voltage = 3 V, RF frequency = 850 MHz, IF frequency = 70 MHz, RF level = 0 dBm, LO level = 4 dBm, T_A= 25°C, unless otherwise noted.

28

27

26

25

24

23

22

20

18

16

14

12

10

–40°C

+85°C

–40°C

+25°C

+85°C

+25°C

2.7

2.8

2.9

3.0

3.1

3.2

3.3

3.4

3.5

750

775

800

825

850

875

900

925

950

975

950

975

SUPPLY VOLTAGE (V)

RF FREQUENCY (MHz)

Figure 9. Input IP3 vs. Supply Voltage

Figure 12. Supply Current vs. RF Frequency

23

22

21

20

19

18

17

16

7.6

7.4

7.2

7.0

6.8

6.6

6.4

6.2

6.0

+85°C

–40°C

+25°C

–40°C

+85°C

5.8

750

2.7

2.8

2.9

3.0

3.1

3.2

3.3

3.4

800

850

RF FREQUENCY (MHz)

900

SUPPLY VOLTAGE (V)

Figure 10. Input P1dB vs. Supply Voltage

Figure 13. Conversion Loss vs. RF Frequency

8.0

7.5

7.0

6.5

6.0

5.5

5.0

27.0

26.5

26.0

25.5

25.0

24.5

24.0

23.5

23.0

22.5

22.0

+25°C

–40°C

+85°C

2.7

2.8

2.9

3.0

3.1

3.2

3.3

3.4

750

775

800

825

850

875

900

925

950

SUPPLY VOLTAGE (V)

RF FREQUENCY (MHz)

Figure 14. Input IP3 vs. RF Frequency

Figure 11. Noise Figure vs. Supply Voltage

Rev. 0 | Page 8 of 24

ADL5350

Supply voltage = 3 V, RF frequency = 850 MHz, IF frequency = 70 MHz, RF level = 0 dBm, LO level = 4 dBm, T_A= 25°C, unless otherwise noted.

23

22

21

20

19

18

17

16

9

8

7

6

5

4

3

2

1

0

+85°C

+25°C

–40°C

+25°C

+85°C

750

775

800

825

850

875

900

925

950

975

250

25

50

75

100

125

150

175

200

225

250

RF FREQUENCY (MHz)

IF FREQUENCY (MHz)

Figure 15. Input P1dB vs. RF Frequency

Figure 18. Conversion Loss vs. IF Frequency

8

7

6

5

4

3

2

1

0

28

27

26

25

24

23

22

–40°C

+25°C

+85°C

750

775

800

825

850

875

900

925

950

25

50

75

100

125

150

175

200

225

250

RF FREQUENCY (MHz)

IF FREQUENCY (MHz)

Figure 16. Noise Figure vs. RF Frequency

Figure 19. Input IP3 vs. IF Frequency

22

20

18

16

14

12

10

8

23

22

21

20

19

18

17

16

+25°C

–40°C

+85°C

+25°C

+85°C

25

50

75

100

125

150

175

200

225

25

50

75

100

125

150

175

200

225

250

IF FREQUENCY (MHz)

Figure 17. Supply Current vs. IF Frequency

Figure 20. Input P1dB vs. IF Frequency

Rev. 0 | Page 9 of 24

ADL5350

Supply voltage = 3 V, RF frequency = 850 MHz, IF frequency = 70 MHz, RF level = 0 dBm, LO level = 4 dBm, T_A= 25°C, unless otherwise noted.

10

9

8

7

6

5

4

3

2

1

0

27

25

23

21

19

17

15

13

–40°C

+25°C

+85°C

50

100

150

200

250

300

350

–6

–4

–2

0

2

4

6

8

10

12

10

IF FREQUENCY (MHz)

LO LEVEL (dBm)

Figure 21. Noise Figure vs. IF Frequency

Figure 24. Input IP3 vs. LO Level

18

16

14

12

10

8

22

21

20

19

18

17

16

15

–40°C

+25°C

+85°C

–40°C

6

4

+25°C

–2

2

0

–6

–4

0

2

4

6

8

10

12

–6

–4

–2

0

2

4

6

8

10

LO LEVEL (dBm)

Figure 22. Supply Current vs. LO Level

Figure 25. Input P1dB vs. LO Level

20

18

16

14

12

10

8

12

11

10

–40°C

+25°C

9

8

7

6

5

4

+85°C

–4

6

–6

–2

0

2

4

6

8

10

12

–2

0

2

4

6

8

LO LEVEL (dBm)

Figure 23. Conversion Loss vs. LO Level

Figure 26. Noise Figure vs. LO Level

Rev. 0 | Page 10 of 24

ADL5350

Supply voltage = 3 V, RF frequency = 850 MHz, IF frequency = 70 MHz, RF level = 0 dBm, LO level = 4 dBm, T_A= 25°C, unless otherwise noted.

–13

–14

–15

–16

–17

–18

–19

–20

–21

0

–2

–4

–6

–8

–10

–12

–14

–16

–18

–20

–40°C

+25°C

+85°C

750 775

800

825

850

875

900

925

950

975

630

680

730

780

830

880

930

RF FREQUENCY (MHz)

LO FREQUENCY (MHz)

Figure 27. IF Feedthrough vs. RF Frequency

Figure 29. RF Leakage vs. LO Frequency

–15

–20

–25

–30

–35

–40

–45

+25°C

+85°C

–40°C

680

705

730

755

780

805

830

855

880

905

LO FREQUENCY (MHz)

Figure 28. IF Feedthrough vs. LO Frequency

Rev. 0 | Page 11 of 24

ADL5350

1950 MHz CHARACTERISTICS

Supply voltage = 3 V, RF frequency = 1950 MHz, IF frequency = 190 MHz, RF level = −10 dBm, LO level = 6 dBm, T_A= 25°C,

unless otherwise noted.

20

19

18

17

16

15

14

13

12

11

10

23

22

21

20

19

18

17

16

15

14

13

–40

–20

0

20

40

60

80

–40

–20

0

20

40

60

80

TEMPERATURE (°C)

Figure 30. Supply Current vs. Temperature

Figure 33. Input P1dB vs. Temperature

10

9

8

7

6

5

4

3

2

1

0

22

20

18

16

14

12

10

+25°C

+85°C

–40°C

–40

–20

0

20

40

60

2.7

2.8

2.9

3.0

3.1

3.2

3.3

3.4

3.5

TEMPERATURE (°C)

SUPPLY VOLTAGE (V)

Figure 31. Conversion Loss vs. Temperature

Figure 34. Supply Current vs. Supply Voltage

28

27

26

25

24

23

22

21

20

19

18

7.4

7.2

7.0

6.8

6.6

6.4

6.2

6.0

+85°C

+25°C

–40°C

2.7

2.8

2.9

3.0

3.1

3.2

3.3

3.4

3.5

–40

–20

0

20

40

60

SUPPLY VOLTAGE (V)

TEMPERATURE (°C)

Figure 35. Conversion Loss vs. Supply Voltage

Figure 32. Input IP3 vs. Temperature

Rev. 0 | Page 12 of 24

ADL5350

Supply voltage = 3 V, RF frequency = 1950 MHz, IF frequency = 190 MHz, RF level = −10 dBm, LO level = 6 dBm, T_A= 25°C,

unless otherwise noted.

28

22

20

18

16

14

12

10

+25°C

+85°C

27

26

25

24

23

22

–40°C

+85°C

+25°C

–40°C

2.7

2.8

2.9

3.0

3.1

3.2

3.3

3.4

3.5

1800 1825 1850 1875 1900 1925 1950 1975 2000 2025 2050

SUPPLY VOLTAGE (V)

RF FREQUENCY (MHz)

Figure 36. Input IP3 vs. Supply Voltage

Figure 39. Supply Current vs. RF Frequency

20

7.6

7.4

7.2

7.0

6.8

6.6

6.4

6.2

6.0

5.8

+25°C

19

18

17

16

+85°C

–40°C

+85°C

+25°C

–40°C

2.7

2.8

2.9

3.0

3.1

3.2

3.3

1800 1825 1850 1875 1900 1925 1950 1975 2000 2025 2050

SUPPLY VOLTAGE (V)

RF FREQUENCY (MHz)

Figure 37. Input P1dB vs. Supply Voltage

Figure 40. Conversion Loss vs. RF Frequency

8.0

7.5

7.0

6.5

6.0

5.5

5.0

27.0

26.5

26.0

25.5

25.0

24.5

24.0

23.5

23.0

22.5

22.0

+85°C

+25°C

–40°C

2.7

2.8

2.9

3.0

3.1

3.2

3.3

1800 1825 1850 1875 1900 1925 1950 1975 2000 2025 2050

SUPPLY VOLTAGE (V)

RF FREQUENCY (MHz)

Figure 38. Noise Figure vs. Supply Voltage

Figure 41. Input IP3 vs. RF Frequency

Rev. 0 | Page 13 of 24

ADL5350

Supply voltage = 3 V, RF frequency = 1950 MHz, IF frequency = 190 MHz, RF level = −10 dBm, LO level = 6 dBm, T_A= 25°C,

unless otherwise noted.

23

22

21

20

19

18

17

16

9

8

7

6

5

4

3

2

1

0

+85°C

+25°C

–40°C

+25°C

+85°C

50 75 100 125 150 175 200 225 250 275 300 325 350 375

1800 1825 1850 1875 1900 1925 1950 1975 2000 2025 2050

IF FREQUENCY (MHz)

RF FREQUENCY (MHz)

Figure 45. Conversion Loss vs. IF Frequency

Figure 42. Input P1dB vs. RF Frequency

28

10

9

8

7

6

5

4

3

2

27

26

25

24

23

22

+85°C

+25°C

–40°C

1

50 75 100 125 150 175 200 225 250 275 300 325 350 375

1800 1825 1850 1875 1900 1925 1950 1975 2000 2025 2050

IF FREQUENCY (MHz)

RF FREQUENCY (MHz)

Figure 46. Input IP3 vs. IF Frequency

Figure 43. Noise Figure vs. RF Frequency

23

22

+25°C

22

21

20

19

18

17

16

20

18

16

14

12

10

8

+85°C

–40°C

+25°C

+85°C

50 75 100 125 150 175 200 225 250 275 300 325 350 375

IF FREQUENCY (MHz)

Figure 47. Input P1dB vs. IF Frequency

Figure 44. Supply Current vs. IF Frequency

Rev. 0 | Page 14 of 24

ADL5350

Supply voltage = 3 V, RF frequency = 1950 MHz, IF frequency = 190 MHz, RF level = −10 dBm, LO level = 6 dBm, T_A= 25°C,

unless otherwise noted.

12

27

25

23

21

19

17

15

13

+25°C

10

8

+85°C

–40°C

6

4

2

0

50

100

150

200

250

300

350

–6

–4

–2

0

2

4

6

8

10

12

10

IF FREQUENCY (MHz)

LO LEVEL (dBm)

Figure 48. Noise Figure vs. IF Frequency

Figure 51. Input IP3 vs. LO Level

22

25

24

23

22

21

20

19

18

17

16

15

14

13

12

20

18

16

14

12

10

8

–40°C

+25°C

+85°C

–40°C

+25°C

+85°C

6

4

2

0

–6

–4

–2

0

2

4

6

8

10

12

–6

–4

–2

0

2

4

6

8

10

LO LEVEL (dBm)

Figure 49. Supply Current vs. LO Level

Figure 52. Input P1dB vs. LO Level

20

18

16

14

12

10

8

12

11

10

9

–40°C

+25°C

+85°C

8

7

6

5

6

–6

4

–2

–4

–2

0

2

4

6

8

10

12

0

2

4

6

8

LO LEVEL (dBm)

Figure 50. Conversion Loss vs. LO Level

Figure 53. Noise Figure vs. LO Level

Rev. 0 | Page 15 of 24

ADL5350

Supply voltage = 3 V, RF frequency = 1950 MHz, IF frequency = 190 MHz, RF level = −10 dBm, LO level = 6 dBm, T_A= 25°C,

unless otherwise noted.

–8

0

–9

–2

–10

–11

–12

–13

–14

–15

–4

–6

–40°C

–8

–10

–12

–14

+25°C

+85°C

1800 1825 1850 1875 1900 1925 1950 1975 2000 2025 2050

1560

1610

1660

1710

1760

1810

1860

1910

1960

RF FREQUENCY (MHz)

LO FREQUENCY (MHz)

Figure 54. IF Feedthrough vs. RF Frequency

Figure 56. RF Leakage vs. LO Frequency

–8

–9

–10

–11

–12

–13

–14

–15

–16

–17

–18

–40°C

+85°C

+25°C

1610 1635 1660 1685 1710 1735 1760 1785 1810 1835 1860

LO FREQUENCY (MHz)

Figure 55. IF Feedthrough vs. LO Frequency

Rev. 0 | Page 16 of 24

ADL5350

FUNCTIONAL DESCRIPTION

CIRCUIT DESCRIPTION

IMPLEMENTATION PROCEDURE

The ADL5350 is a GaAs pHEMT, single-ended, passive

mixer with an integrated LO buffer amplifier. The device

relies on the varying drain to source channel conductance

of a FET junction to modulate an RF signal. A simplified

schematic is shown in Figure 57.

The ADL5350 is a simple single-ended mixer that relies

on off-chip circuitry to achieve effective RF dynamic

performance. The following steps should be followed

to achieve optimum performance (see Figure 58 for

component designations):

RF

V

S

V

S

INPUT

OR OUTPUT

IF

C4

L4

C6

C2

L2

VPOS

RF

IF

8

7

6

5

OUTPUT

OR INPUT

RF/IF

NC

VPOS GND1

LOIN

LO

INPUT

ADL5350

RF/IF

1

GND2

LOIN

3

NC

4

2

GND1

GND2

RF

L3

C3

Figure 57. Simplified Schematic

L1 C1

The LO signal is applied to the gate contact of a FET-based

buffer amplifier. The buffer amplifier provides sufficient

gain of the LO signal to drive the resistive switch. Additionally,

feedback circuitry provides the necessary bias to the FET

buffer amplifier and RF/IF ports to achieve optimum

modulation efficiency for common cellular frequencies.

LO

Figure 58. Reference Schematic

1. Table 7 shows the recommended LO bias inductor

values for a variety of LO frequencies. To ensure efficient

commutation of the mixer, the bias inductor needs to

be properly set. For other frequencies within the range

shown, the values can be interpolated. For frequencies

outside this range, see the Applications Information section.

The mixing of RF and LO signals is achieved by switching

the channel conductance from the RF/IF port to ground at

the rate of the LO. The RF signal is passed through an external

band-pass network to help reject image bands and reduce

the broadband noise presented to the mixer. The band-

limited RF signal is presented to the time-varying load of

the RF/IF port, which causes the envelope of the RF signal

to be amplitude modulated at the rate of the LO. A filter

network applied to the IF port is necessary to reject the

RF signal and pass the wanted mixing product. In a down-

conversion application, the IF filter network is designed to

pass the difference frequency and present an open circuit

to the incident RF frequency. Similarly, for an upconversion

application, the filter is designed to pass the sum frequency

and reject the incident RF. As a result, the frequency response

of the mixer is determined by the response characteristics

of the external RF/IF filter networks.

Table 7. Recommended LO Bias Inductor

Recommended LO Bias

Desired LO Frequency (MHz) Inductor, L4¹(nH)

380

750

1000

1750

2000

68

24

18

3.8

2.1

¹The bias inductor should have a self-resonant frequency greater than

the intended frequency of operation.

Rev. 0 | Page 17 of 24

ADL5350

2. Tune the LO port input network for optimum return

loss. Typically, a band-pass network is used to pass the

LO signal to the LOIN pin. It is recommended to block

high frequency harmonics of the LO from the mixer

core. LO harmonics cause higher RF frequency images

to be downconverted to the desired IF frequency and

result in sensitivity degradation. If the intended LO

source has poor harmonic distortion and spectral purity,

it may be necessary to employ a higher order band-pass

filter network. Figure 58 illustrates a simple LC band-

pass filter used to pass the fundamental frequency of the

LO source. Capacitor C3 is a simple dc block, while the

Series Inductor L3, along with the gate-to-source

If a better than −10 dB return loss is desired, it may be

necessary to add a shunt resistor to ground before the

coupling capacitor (C3) to present a lower loading

impedance to the LO source. In doing so, a slightly

greater LO drive level may be required.

3. Design the RF and IF filter networks. Figure 58 depicts

simple LC tank filter networks for the IF and RF port

interfaces. The RF port LC network is designed to pass

the RF input signal. The series LC tank has a resonant

frequency at 1/(2π√LC). At resonance, the series reactances

are canceled, which presents a series short to the RF

signal. A parallel LC tank is used on the IF port to reject

the RF and LO signals. At resonance, the parallel LC tank

presents an open circuit.

capacitance of the buffer amplifier, form a low-pass

network. The native gate input of the LO buffer (FET)

alone presents a rather high input impedance. The gate

bias is generated internally using feedback that can result

in a positive return loss at the intended LO frequency.

It is necessary to account for the board parasitics, finite

Q, and self-resonant frequencies of the LC components

when designing the RF, IF, and LO filter networks. Table 8

provides suggested values for initial prototyping.

Table 8. Suggested RF, IF, and LO Filter Networks for Low-Side LO Injection

RF Frequency (MHz)

L1 (nH)¹

8.3

C1 (pF)

L2 (nH)

C2 (pF)

10

L3 (nH)

10

C3 (pF)

100

450

10

850

6.8

4.7

5.6

8.2

100

1950

2400

1.7

0.67

1.5

1

1.7

1.5

1.2

0.7

3.5

3.0

100

¹The inductor should have a self-resonant frequency greater than the intended frequency of operation. L1 should be a high Q inductor for optimum NF performance.

Rev. 0 | Page 18 of 24

ADL5350

APPLICATIONS INFORMATION

LOW FREQUENCY APPLICATIONS

HIGH FREQUENCY APPLICATIONS

The ADL5350 can be used at extended frequencies with

some careful attention to board and component parasitics.

Figure 61 is an example of a 2560 MHz to 2660 MHz down-

conversion using a low-side LO. The performance of this circuit

is depicted in Figure 62. Note that the inductor and capacitor

values are very small, especially for the RF and IF ports. Above

2.5 GHz, it is necessary to consider alternate solutions to avoid

unreasonably small inductor and capacitor values.

3V

The ADL5350 can be used in low frequency applications. The

circuit in Figure 59 is designed for an RF of 136 MHz to 176 MHz

and an IF of 45 MHz using a high-side LO. The series and

parallel resonant circuits are tuned for 154 MHz, which is

the geometric mean of the desired RF frequencies. The

performance of this circuit is depicted in Figure 60.

3V

4.7µF

100nF

4.7µF

IF

10nF

100pF

IF

100nH

1nF

36nH

27pF

1.5nH

0.7pF

2.1nH

8

7

6

5

RF/IF

NC

VPOS GND1

ALL INDUCTORS

ARE 0603CS

SERIES FROM

COILCRAFT

8

7

6

5

ADL5350

RF/IF

NC

VPOS GND1

ALL INDUCTORS

ARE 0302CS

SERIES FROM

COILCRAFT

RF/IF

1

GND2

2

LOIN

3

NC

4

ADL5350

RF/IF

1

GND2

2

LOIN

3

NC

4

36nH

RF

1nF

27pF

0.67nH

RF

3.0nH

LO

1pF

100pF

Figure 59. 136 MHz to 176 MHz RF Downconversion Schematic

LO

40

35

30

25

20

15

10

12

10

8

Figure 61. 2560 MHz to 2660 MHz RF Downconversion Schematic

IIP3

35

30

25

20

15

10

5

14

13

12

11

10

9

IIP3

6

LOSS

IP1dB

4

2

0

176

LOSS

136

146

156

RF FREQUENCY (MHz)

166

8

0

2560

7

2660

Figure 60. Measured Performance for Circuit in Figure 59

Using High-Side LO Injection and 45 MHz IF

2580

2600

2620

2640

RF FREQUENCY (MHz)

Figure 62. Measured Performance for Circuit in Figure 61

Using Low-Side LO Injection and 374 MHz IF

The typical networks used for cellular applications below

2.6 GHz use band-select and band-reject networks on the RF

and IF ports. At higher RF frequencies, these networks are not

easily realized by using lumped element components. As a result, it

is necessary to consider alternate filter network topologies to

allow more reasonable values for inductors and capacitors.

Rev. 0 | Page 19 of 24

ADL5350

Figure 63 depicts a crossover filter network approach to provide

isolation between the RF and IF ports for a downconverting

application. The crossover network essentially provides a high-

pass filter to allow the RF signal to pass to the RF/IF node (Pin 1

and Pin 8), while presenting a low-pass filter (which is actually

a band-pass filter when considering the dc blocking capacitor,

Classic audio crossover filter design techniques can be applied

to help derive component values. However, some caution must be

applied when selecting component values. At high RF frequencies,

the board parasitics can significantly influence the final optimum

inductor and capacitor component selections. Some empirical

testing may be necessary to optimize the RF and IF port filter

networks. The performance of the circuit depicted in Figure 63

is provided in Figure 64.

C_AC). This allows the difference component (f_RF− f_LO) to be

passed to the desired IF load.

30

3V

4.7µF

14

IF

IIP3

C

100pF

AC

25

20

15

10

5

12

10

8

C2

1.8pF

100pF

L2

1.5nH

3.8nH

IP1dB

8

7

6

5

ALL

RF/IF

NC

VPOS GND1

INDUCTORS

ARE 0302CS

SERIES FROM

COILCRAFT

LOSS

ADL5350

6

RF/IF

1

GND2

2

LOIN

3

NC

4

RF

2.2nH

100pF

C1

1.2pF

0

3300

2

3800

L1

3.5nH

3400

3500

3600

3700

RF FREQUENCY (MHz)

LO

Figure 64. Measured Performance for Circuit in Figure 63

Using Low-Side LO Injection and 800 MHz IF

Figure 63. 3.3 GHz to 3.8 GHz RF Downconversion Schematic

When designing the RF port and IF port networks, it is

important to remember that the networks share a common

node (the RF/IF pins). In addition, the opposing network presents

some loading impedance to the target network being designed.

Rev. 0 | Page 20 of 24

ADL5350

EVALUATION BOARD

An evaluation board is available for the ADL5350. The evaluation board has two halves: a low band board designated as Board A

and a high band board designated as Board B. The schematic for the evaluation board is shown in Figure 65.

VPOS-A

VPOS-B

C5-A

C5-B

IF-A

IF-B

C4-A

L4-A

C4-B

L4-B

C6-A

C2-A

C6-B

C2-B

L2-A

L2-B

8

7

6

5

8

7

6

5

RF/IF

NC

VPOS GND1

RF/IF

NC

VPOS GND1

U1-A

U1-B

ADL5350

RF/IF

1

GND2

2

LOIN

3

NC

4

RF/IF

1

GND2

2

LOIN

3

NC

4

RF-A

RF-B

L3-A

C3-A

L3-B

C3-B

L1-A C1-A

L1-B C1-B

LO-A

LO-B

Figure 65. Evaluation Board

Table 9. Evaluation Board Configuration Options

Component Function

Default Conditions

C4-A, C4-B,

C5-A, C5-B

Supply Decoupling. C4-A and C4-B provide local bypassing of the supply.

C5-A and C5-B are used to filter the ripple of a noisy supply line. These are not

always necessary.

C4-A = C4-B = 100 pF,

C5-A = C5-B = 4.7 μF

L1-A, L1-B,

C1-A, C1-B

RF Input Network. Designed to provide series resonance at the intended

RF frequency.

L1-A = 6.8 nH (0603CS from Coilcraft),

L1-B = 1.7 nH (0302CS from Coilcraft),

C1-A = 4.7 pF, C1-B = 1.5 pF

L2-A, L2-B,

C2-A, C2-B,

C6-A, C6-B

IF Output Network. Designed to provide parallel resonance at the geometric mean

of the RF and LO frequencies.

L2-A = 4.7 nH (0603CS from Coilcraft),

L2-B = 1.7 nH (0302CS from Coilcraft),

C2-A = 5.6 pF, C2-B = 1.2 pF,

C6-A = C6-B = 1 nF

L3-A, L3-B,

C3-A, C3-B

LO Input Network. Designed to block dc and optimize LO voltage swing at LOIN.

L3-A = 8.2 nH (0603CS from Coilcraft),

L3-B = 3.5 nH (0302CS from Coilcraft),

C3-A = C3-B = 100 pF

L4-A, L4-B

LO Buffer Amplifier Choke. Provides bias and ac loading impedance to LO buffer

amplifier.

L4-A = 24 nH (0603CS from Coilcraft),

L4-B = 3.8 nH (0302CS from Coilcraft)

Rev. 0 | Page 21 of 24

ADL5350

OUTLINE DIMENSIONS

1.89

1.74

1.59

3.25

3.00

2.75

0.55

0.40

0.30

0.60

0.45

0.30

5

4

8

*

2.25

2.00

1.75

BOTTOM VIEW

1.95

1.75

1.55

TOP VIEW

EXPOSED PAD

0.15

0.10

0.05

1

2.95

2.75

2.55

PIN 1

INDICATOR

0.25

0.20

0.15

0.50 BSC

12° MAX

0.80 MAX

0.65 TYP

1.00

0.85

0.80

0.05 MAX

0.02 NOM

0.30

0.23

0.18

SEATING

PLANE

0.20 REF

Figure 66. 8-Lead Lead Frame Chip Scale Package [LFCSP_VD]

2 mm × 3 mm Body, Very Thin, Dual Lead

(CP-8-1)

Dimensions shown in millimeters

ORDERING GUIDE

Package

Option

Ordering

Branding Quantity

Model

ADL5350ACPZ-R7¹

Temperature Range Package Description

−40°C to +85°C

8-Lead Lead Frame Chip Scale Package [LFCSP_VD]

Evaluation Board

CP-8-1

08

3000, Reel

50, Waffle Pack

ADL5350ACPZ-WP¹−40°C to +85°C

ADL5350-EVALZ¹

¹Z = RoHS Compliant Part.

Rev. 0 | Page 22 of 24

ADL5350

NOTES

Rev. 0 | Page 23 of 24

ADL5350

NOTES

registered trademarks are the property of their respective owners.

D05615-0-2/08(0)

Rev. 0 | Page 24 of 24


型号：	ADL5350ACPZ
厂家：	ADI
描述：	LF to 4 GHz High Linearity Y-Mixer 低频至4 GHz高线性度Y型混频器
文件：	总24页 (文件大小：409K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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