AD8599TRZ-EP-R7 [ADI]
Ultralow Distortion, Ultralow Noise Op Amp (Dual);型号: | AD8599TRZ-EP-R7 |
厂家: | ADI |
描述: | Ultralow Distortion, Ultralow Noise Op Amp (Dual) 放大器 光电二极管 |
文件: | 总8页 (文件大小:227K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Dual, Ultralow Distortion,
Ultralow Noise Op Amp
Enhanced Product
AD8599-EP
FEATURES
PIN CONFIGURATION
Low voltage noise density: 1.15 nV/√Hz at 1 kHz
Low distortion: −120 dB total harmonic distortion plus noise
(THD + N) at 1 kHz
OUT A
–IN A
+IN A
–V
1
2
3
4
8
7
6
5
+V
AD8599-EP
OUT B
–IN B
+IN B
TOP VIEW
(Not to Scale)
Peak-to-peak noise: 76 nV p-p at 0.1 Hz to 10 Hz
Slew rate: 15 V/μs at VSY
= 15 V
Figure 1.
Wide gain bandwidth product: 10 MHz
Supply current per amplifier: 5.0 mA typical at VSY
= 15 V
Low offset voltage: 10 μV typical at VSY
= 15 V
Common-mode rejection ratio (CMRR): 120 dB minimum
Unity-gain stable
Dual-supply operation: 15 V
ENHANCED PRODUCT FEATURES
Supports defense and aerospace applications (AQEC standard)
Extended temperature range: −55°C to +125°C
Controlled manufacturing baseline
One assembly/test site
One fabrication site
Enhanced product change notification
Qualification data available on request
APPLICATIONS
Professional audio preamplifiers
ATE/precision testers
Imaging systems
Medical/physiological measurements
Precision detectors/instruments
Precision data conversions
GENERAL DESCRIPTION
The AD8599-EP is a very low noise, low distortion op amp ideal
for use as a preamplifier. The low noise of 1.15 nV/√Hz and low
harmonic distortion of −120 dB (or better) at audio bandwidths
give the AD8599-EP the wide dynamic range necessary for
preamplifiers in audio, medical, and instrumentation
applications. The excellent slew rate of 15 V/μs and 10 MHz
gain bandwidth product make the AD8599-EP highly suitable
for medical applications. The low distortion and fast settling
time make the AD8599-EP ideal for buffering high resolution
data converters.
The AD8599-EP is available in an 8-lead SOIC package. It is
specified over a −55°C to +125°C temperature range.
Additional application and technical information can be found
in the AD8599 data sheet.
Rev. 0
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registeredtrademarks arethe property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
Technical Support
©2015 Analog Devices, Inc. All rights reserved.
www.analog.com
AD8599-EP
Enhanced Product
TABLE OF CONTENTS
Features .............................................................................................. 1
Absolute Maximum Ratings ............................................................4
Thermal Resistance.......................................................................4
Power Sequencing .........................................................................4
ESD Caution...................................................................................4
Typical Performance Characteristics ..............................................5
Outline Dimensions..........................................................................8
Ordering Guide .............................................................................8
Enhanced Product Features ............................................................ 1
Applications....................................................................................... 1
Pin Configuration............................................................................. 1
General Description......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
REVISION HISTORY
8/15—Revision 0: Initial Version
Rev. 0 | Page 2 of 8
Enhanced Product
SPECIFICATIONS
AD8599-EP
VSY
= 15 V, VCM = 0 V, V O = 0 V, T A = 25°C, unless otherwise specified.
Table 1.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
10
120
300
2.5
200
350
200
350
+12.5
µV
µV
µV/°C
nA
nA
nA
nA
V
dB
dB
dB
dB
−55°C ≤ TA ≤ +125°C
−55°C ≤ TA ≤ +125°C
Offset Voltage Drift
Input Bias Current
ΔVOS/ΔT
IB
0.8
25
−55°C ≤ TA ≤ +125°C
−55°C ≤ TA ≤ +125°C
Input Offset Current
IOS
50
Input Voltage Range
Common-Mode Rejection Ratio
IVR
CMRR
−12.5
120
115
110
106
−12.5 V ≤ VCM ≤ +12.5 V
−55°C ≤ TA ≤ +125°C
RL ≥ 600 Ω, VO = −11 V to +11 V
−55°C ≤ TA ≤ +125°C
135
116
Large Signal Voltage Gain
AVO
Input Capacitance
Differential Capacitance
Common-Mode Capacitance
OUTPUT CHARACTERISTICS
Output Voltage
CDIFF
CCM
12.1
5.1
pF
pF
High
VOH
RL = 600 Ω
−55°C ≤ TA ≤ +125°C
RL = 2 kΩ
−55°C ≤ TA ≤ +125°C
RL = 600 Ω
−55°C ≤ TA ≤ +125°C
RL = 2 kΩ
13.1
12.8
13.5
13.2
13.4
V
V
V
V
V
V
V
V
13.7
Low
VOL
−13.2
−13.5
−12.9
−12.8
−13.4
−13.3
−55°C ≤ TA ≤ +125°C
Output Short-Circuit Current
Closed-Loop Output Impedance
POWER SUPPLY
ISC
ZOUT
52
5
mA
Ω
At 1 MHz, AVO = 1
Power Supply Rejection Ratio
PSRR
ISY
VSY = 18 V to 4.5 V
−55°C ≤ TA ≤ +125°C
120
118
140
5.0
dB
dB
mA
mA
Supply Current per Amplifier
5.7
6.75
−55°C ≤ TA ≤ +125°C
DYNAMIC PERFORMANCE
Slew Rate
SR
AVO = −1, RL = 2 kΩ
AVO = 1, RL = 2 kΩ
To 0.01%, step = 10 V
16
15
2
V/µs
V/µs
µs
Settling Time
tS
Gain Bandwidth Product
Phase Margin
GBP
ΦM
10
65
MHz
Degrees
NOISE PERFORMANCE
Peak-to-Peak Noise
Voltage Noise Density
nV p-p
nV/√Hz
nV/√Hz
pA/√Hz
pA/√Hz
pA/√Hz
pA/√Hz
dB
en p-p
en
0.1 Hz to 10 Hz
f = 1 kHz
f = 10 Hz
f = 1 kHz
f = 10 Hz
f = 1 kHz
f = 10 Hz
76
1.07
1.15
1.5
Correlated Current Noise
1.9
4.3
2.3
5.3
−120
−120
Uncorrelated Current Noise
Total Harmonic Distortion + Noise
Channel Separation
THD + N
CS
G = 1, RL ≥ 1 kΩ, f = 1 kHz, VRMS = 3 V
f = 10 kHz
dB
Rev. 0 | Page 3 of 8
AD8599-EP
Enhanced Product
ABSOLUTE MAXIMUM RATINGS
Table 2.
THERMAL RESISTANCE
θJA is specified with the device soldered on a circuit board with
its exposed paddle soldered to a pad (if applicable) on a 4-layer
JEDEC standard PCB with zero air flow.
Parameter
Rating
Supply Voltage
Input Voltage
18 V
−V ≤ VIN ≤ +V
1 V
Indefinite
−65°C to +150°C
−55°C to +125°C
300°C
Differential Input Voltage1
Output Short-Circuit to GND
Storage Temperature Range
Operating Temperature Range
Lead Temperature (Soldering 60 sec)
Junction Temperature
Table 3.
Package Type
θJA
θJC
Unit
8-Lead SOIC (R-8)
120
36
°C/W
POWER SEQUENCING
150°C
Apply the op amp supplies simultaneously. The op amp supplies
must be stable before any input signals are applied. In any case,
the input current must be limited to 5 mA.
1 If the differential input voltage exceeds 1 V, limit the current to 5 mA.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
Rev. 0 | Page 4 of 8
Enhanced Product
AD8599-EP
TYPICAL PERFORMANCE CHARACTERISTICS
250
250
200
150
100
50
V
= ±5V
V
= ±15V
SY
SY
–55°C ≤ T ≤ +125°C
–55°C ≤ T ≤ +125°C
A
A
200
150
100
50
MEAN + 3σ
MEAN + 3σ
MEAN
MEAN
0
0
MEAN – 3σ
–50
–100
–150
–200
–250
–50
–100
–150
–200
–250
MEAN – 3σ
–75
–50
–25
0
25
50
75
100
125
–75
–50
–25
0
25
50
75
100
125
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 2. Input Offset Voltage (VOS) Distribution, VSY
=
5 V
Figure 5. Input Offset Voltage (VOS) Distribution, VSY
=
15 V
35
30
V
= ±5V
V
= ±15V
SY
SY
–55°C ≤ T ≤ +125°C
–55°C ≤ T ≤ +125°C
A
A
30
25
20
15
10
5
25
20
15
10
5
0
0
TCV (µV/°C)
TCV (µV/°C)
OS
OS
Figure 3. Input Offset Voltage Drift (TCVOS) Distribution, VSY
=
5 V
Figure 6. Input Offset Voltage Drift (TCVOS) Distribution, VSY = 15 V
8
7
6
5
4
3
2
1
0
7
+125°C
6
5
4
3
2
1
0
+85°C
V
= ±15V
= ±5V
SY
+25°C
–40°C
–55°C
V
SY
–75
–50
–25
0
25
50
75
100
125
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
(V)
TEMPERATURE (°C)
V
SY
Figure 4. Supply Current (ISY) vs. Temperature
Figure 7. Supply Current (ISY) vs. Supply Voltage (VSY)
Rev. 0 | Page 5 of 8
AD8599-EP
Enhanced Product
250
200
150
100
50
250
200
150
100
50
V
= ±5V
V
= ±15V
SY
SY
0
0
–50
–100
–150
–200
–250
–50
–100
–150
–200
–250
–75
–50
–25
0
25
50
75
100
125
–75
–50
–25
0
25
50
75
100
125
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 8. Input Bias Current (IB) vs. Temperature, VSY
=
5 V
Figure 11. Input Bias Current (IB) vs. Temperature, VSY
=
15 V
300
60
50
40
250
200
150
100
50
–55°C
–40°C
+25°C
V
= ±5V
SY
0
30
20
10
0
+85°C
–50
–100
–150
–200
–250
–300
V
= ±15V
SY
+125°C
–12 –10 –8 –6 –4 –2
0
2
4
6
8
10 12
–75
–50
–25
0
25
50
75
100
125
V
(V)
TEMPERATURE (°C)
CM
Figure 12. Input Offset Current (IOS) vs. Temperature
Figure 9. Input Bias Current (IB) vs. Common-Mode Voltage (VCM
)
120
118
116
114
112
110
114
V
= ±15V
SY
V
= ±5V
SY
R
= 2kΩ
L
112
110
108
106
104
102
100
R
= 2kΩ
L
R
= 600Ω
L
R
= 600Ω
L
–75
–50
–25
0
25
50
75
100
125
–75
–50
–25
0
25
50
75
100
125
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 13. Large Signal Voltage Gain (AVO) vs. Temperature
Figure 10. Large Signal Voltage Gain (AVO) vs. Temperature, VSY
= 5 V
Rev. 0 | Page 6 of 8
Enhanced Product
AD8599-EP
100
100
80
V
= ±5V
SY
V
= ±15V
SY
80
+I
SC
+I
SC
60
40
60
40
20
20
0
0
–20
–40
–20
–40
–60
–80
–I
–I
SC
SC
–60
–80
–75
–50
–25
0
25
50
75
100
125
–75
–50
–25
0
25
50
75
100
125
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 14. Output Short-Circuit Current (ISC) vs. Temperature, VSY
=
5 V
Figure 17. Output Short-Circuit Current (ISC) vs. Temperature, VSY
=
15 V
2.5
2.5
V
= ±5V
V
= ±15V
SY
SY
2.0
1.5
1.0
0.5
0
2.0
1.5
1.0
0.5
0
R
= 600Ω
= 2kΩ
L
R
= 600Ω
= 2kΩ
L
R
L
R
L
–75
–50
–25
0
25
50
75
100
125
–75
–50
–25
0
25
50
75
100
125
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 15. Output Saturation Voltage (VCC − VOH) vs. Temperature, VSY
=
5 V
Figure 18. Output Saturation Voltage (VCC − VOH) vs. Temperature, VSY = 15 V
0
0
V
= ±5V
V
= ±15V
SY
SY
–0.5
–1.0
–1.5
–2.0
–2.5
–0.5
–1.0
–1.5
–2.0
–2.5
R
= 2kΩ
L
R
= 2kΩ
L
R
= 600Ω
L
R
= 600Ω
L
–75
–50
–25
0
25
50
75
100
125
–75
–50
–25
0
25
50
75
100
125
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 16. Output Saturation Voltage (VEE − VOL) vs. Temperature, VSY
=
5 V
Figure 19. Output Saturation Voltage (VEE − VOL) vs. Temperature, VSY = 15 V
Rev. 0 | Page 7 of 8
AD8599-EP
Enhanced Product
OUTLINE DIMENSIONS
5.00 (0.1968)
4.80 (0.1890)
8
1
5
4
6.20 (0.2441)
5.80 (0.2284)
4.00 (0.1574)
3.80 (0.1497)
0.50 (0.0196)
0.25 (0.0099)
1.27 (0.0500)
BSC
45°
1.75 (0.0688)
1.35 (0.0532)
0.25 (0.0098)
0.10 (0.0040)
8°
0°
0.51 (0.0201)
0.31 (0.0122)
COPLANARITY
0.10
1.27 (0.0500)
0.40 (0.0157)
0.25 (0.0098)
0.17 (0.0067)
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MS-012-AA
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
Figure 20. 8-Lead Standard Small Outline Package [SOIC_N]
Narrow Body
(R-8)
Dimensions shown in millimeters and (inches)
ORDERING GUIDE
Model1
Temperature Range
Package Description
Package Option
AD8599TRZ-EP
AD8599TRZ-EP-R7
−55°C to +125°C
−55°C to +125°C
8-Lead Standard Small Outline Package [SOIC_N]
8-Lead Standard Small Outline Package [SOIC_N]
R-8
R-8
1 Z = RoHS Complaint Part.
©2015 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D13065-0-8/15(0)
Rev. 0 | Page 8 of 8
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