AD5290YRMZ50-RL7 [ADI]

Compact +30V/【15V 256-Position Digital Potentiometer; 小巧+ 30V / 15V 【 256位数字电位计
AD5290YRMZ50-RL7
型号: AD5290YRMZ50-RL7
厂家: ADI    ADI
描述:

Compact +30V/【15V 256-Position Digital Potentiometer
小巧+ 30V / 15V 【 256位数字电位计

数字电位计
文件: 总11页 (文件大小:165K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Compact +30V/± ±1V ꢀ156-oꢁstsoꢂ ꢃsistaꢄ  
-oteꢂtsometer  
-reꢄsmsꢂary Techꢂscaꢄ ꢃata  
Aꢃ1ꢀ90  
MSOP-±0 package. AD5290 can be operated from a single  
supply +2.7 V to +30 V or dual supply ±2.7 V to ±±5 V. All  
parts are guaranteed to operate over the automotive  
temperature range of -40°C to +±05°C.  
FEATURES  
256-position  
+2.7V to +30V Single Supply Operation  
2.7V to 15V Dual Supply Operation  
End-to-end resistance 10 kΩ, 50 kΩ, 100 kΩ  
Low temperature coefficient 35 ppm/°C  
Power-on preset to midscale  
SPI compatible interface  
Automotive temperature range –40°C to +105°C  
Compact MSOP-10 (3 mm × 4.9 mm) package  
FUNCTIONAL BLOCK DIAGRAM  
AD5290  
APPLICATIONS  
V
DD  
Programmable Gain and Offset  
Programmable Power Supply  
Industrial Actuator Control  
LED Array Driver  
Audio Volume Control  
General Purpose DAC Replacement  
Mechanical Potentiometer Replacement  
Q
SDO  
A
8-Bit  
8
8-Bit  
8
SERIAL  
REG  
W
B
LATCH  
D
SDI  
CLK  
CS  
RS  
CK  
V
SS  
POR  
GENERAL OVERVIEW  
The AD5290 is a low cost, compact 2.9 mm × 3 mm  
+30V/±±5V, 256-position digital potentiometer. This device  
performs the same electronic adjustment function as  
mechanical potentiometers or variable resistors, with enhanced  
resolution, solid-state reliability, and superior low temperature  
coefficient performance.  
DGND  
Figure 1.  
The wiper settings are controllable through an SPI compatible  
digital interface. The resistance between the wiper and either  
end point of the fixed resistor varies linearly with respect to the  
digital code transferred into the RDAC latch.  
Note:  
The terms digital potentiometer and RDAC are used interchangeably.  
The AD5290 is available in ±0k, 50k, and ±00kin compact  
Rev. PrC  
Information furnished by Analog Devices is believed to be accurate and reliable.  
However, no responsibility is assumed by Analog Devices for its use, nor for any  
infringements of patents or other rights of third parties that may result from its use.  
Specifications subject to change without notice. No license is granted by implication  
or otherwise under any patent or patent rights of Analog Devices. Trademarks and  
registered trademarks are the property of their respective companies.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700  
Fax: 781.326.8703  
www.analog.com  
© 2004 Analog Devices, Inc. All rights reserved.  
-reꢄsmsꢂary Techꢂscaꢄ ꢃata  
Aꢃ1ꢀ90  
ELECTRICAL CHARACTERISTICS—±0 kΩ, 10 kΩ, ±00 kΩ VERSIONS  
(VDD/VSS = ±1ꢀV±1±ꢁ or ±ꢀV±1±ꢁꢂ VA = +VDDꢂ VB = VSS/±Vꢂ -4±°C < TA < +1±ꢀ°C unless otherwise noted)  
Table 1.  
Parameter  
Symbol  
Conditions  
Min Typ1  
Max  
Unit  
DC CHARACTERISTICS—RHEOSTAT MODE  
Resistor Differential Nonlinearity2  
Resistor Integral Nonlinearity2  
Nominal Resistor Tolerance3  
Resistance Temperature Coefficient  
R-DNL  
R-INL  
∆RAB  
RWBꢂ VA = no connect  
RWBꢂ VA = no connect  
TA = 2ꢀ°C  
–1  
–2  
–3±  
±±.1  
±±.2ꢀ  
+1  
+2  
+3±  
LSB  
LSB  
(∆RAB/RAB)/∆T*1±6 VAB = VDDꢂ  
Wiper = no connect  
VDD = 3± V  
3ꢀ  
ppm/°C  
Wiper Resistance  
RW  
ꢀ±  
2±±  
12±  
4±±  
VDD = ꢀ V  
DC CHARACTERISTICS—POTENTIOMETER DIVIDER MODE  
Resolution  
N
8
Bits  
Differential Nonlinearity4  
Integral Nonlinearity4  
Voltage Divider Temperature Coefficient  
Full-Scale Error  
DNL  
INL  
(∆VW/VW)/∆T*1±6  
VWFSE  
–1  
–1  
±±.1  
±±.3  
–1  
1
+1  
+1  
LSB  
LSB  
ppm/°C  
LSB  
LSB  
Code = ±x8±  
Code = ±xFF  
Code = ±x±±  
–3  
±
±
3
Zero-Scale Error  
VWZSE  
RESISTOR TERMINALS  
Voltage Rangeꢀ  
VAꢂBꢂW  
CAꢂB  
VSS  
VDD  
V
pF  
Capacitance6 Aꢂ B  
f = 1 MHzꢂ measured to  
GNDꢂ Code = ±x8±  
f = 1 MHzꢂ measured to  
GNDꢂ Code = ±x8±  
4ꢀ  
6±  
1
Capacitance6 W  
CW  
ICM  
pF  
Common-Mode Leakage  
DIGITAL INPUTS AND OUTPUTS  
Input Logic High  
VA = VB = VW  
nA  
VIH  
VIL  
2.4  
4.9  
V
V
V
V
V
DD = +5V or +15V  
DD = +5V or +15V  
Input Logic Low  
Output Logic High  
Output Logic Low  
±.8  
V
VOH  
VOL  
RL = 2.2 kto +5 V  
±.4  
±1  
IOL = 1.6mA, VLOGIC = +5V,  
VDD = +15V  
Input Current  
II  
CI  
VIN = ± V or +1ꢀ V  
µA  
pF  
Input Capacitance  
POWER SUPPLIES  
Power Supply Range  
Dual Supply Range  
±2.ꢃ  
±16.ꢀ  
+3±  
V
V
VDD/VSS  
Power Supply Range  
VDD  
Single Supply Rangeꢂ VSS = +2.ꢃ  
± V  
Supply Current6  
IDD  
IDD  
ISS  
VIH = ꢀ V or VIL = ± Vꢂ VDD  
+ꢀ V  
VIH = ꢀ V or VIL = ± Vꢂ VDD  
+1ꢀ V  
VIH = ꢀ V or VIL = ± Vꢂ VSS = -  
ꢀ V or –1ꢀ V  
=
±.1  
1±  
2
µA  
Supply Current  
Supply Current  
=
±.ꢃꢀ  
±.±2  
mA  
mA  
mW  
±.1  
3±  
Power Dissipationꢃ  
PDISS  
PSS  
VIH = ꢀ V or VIL = ± Vꢂ VDD  
+1ꢀ Vꢂ VSS = -1ꢀ V  
=
11  
Power Supply Sensitivity  
±±.±1  
±±.±2 ꢁ/ꢁ  
VDD = +1ꢀV ±1±ꢁꢂ or  
VSS = -1ꢀV ±1±ꢁꢂ Code =  
Midscale  
DYNAMIC CHARACTERISTICS6ꢂ 8  
Bandwidth –3dB  
BW  
RAB = 1± kΩ/ꢀ± kΩ/1±± kΩꢂ  
Code = ±x8±  
ꢀ2ꢀ/12ꢀ/6±  
kHz  
Rev. Pr C | Page 2 of 11  
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Aꢃ1ꢀ90  
Total Harmonic Distortion  
THDW  
tS  
VA =1 V rmsꢂ VB = ± Vꢂ  
f = 1 kHzꢂ RAB = 1± kΩ  
VA = ꢀ Vꢂ VB = ± Vꢂ  
±1 LSB error band  
±.±ꢀ  
4
VW Settling Time (1± kΩ/ꢀ± kΩ/1±± kΩ)  
Resistor Noise Voltage Density  
µs  
eN_WB  
RWB = 2ꢀ kΩ  
14  
nV/√Hz  
Rev. Pr C | Page 3 of 11  
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Aꢃ1ꢀ90  
TIMING CHARACTERISTICS— ±0 kΩ, 10 kΩ, ±00 kΩ VERSIONS  
(VDD/VSS = ±1ꢀV±1±ꢁ or ±ꢀV±1±ꢁꢂ VA = +VDDꢂ VB = ±Vꢂ -4±°C < TA < +1±ꢀ°C unless otherwise noted.)  
Table 2.  
Parameter  
Symbol  
Conditions  
Min Typ1 Max Unit  
SPI INTERFACE TIMING CHARACTERISTICS6ꢂ 8ꢂ9 (Specifications Apply to All Parts)  
Clock Frequency  
Input Clock Pulsewidth  
Data Setup Time  
fCLK  
tCHꢂ tCL  
tDS  
4
MHz  
ns  
ns  
Clock level high or low  
12±  
3±  
Data Hold Time  
tDH  
2±  
ns  
CLK to SDO Propagation Delay  
tPD  
1±  
1±±  
ns  
R
PU = 1Kꢂ CL < 2±pF  
CS  
tCSS  
12±  
1ꢀ±  
TBD  
12±  
12±  
ns  
ns  
ns  
ns  
ns  
Setup Time  
CS  
tCSW  
tCSH±  
tCSH1  
tCS1  
High Pulsewidth  
CS  
CS  
CLK Fall to  
CLK Fall to  
CS  
Fall Hold Time  
Rise Hold Time  
Rise to Clock Rise Setup  
NOTES  
1.  
2.  
Typical specifications represent average readings at +2ꢀ°C and VDD = ꢀ V.  
Resistor position nonlinearity error R-INL is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper  
positions. R-DNL measures the relative step change from ideal between successive tap positions. Parts are guaranteed monotonic.  
3.  
4.  
ꢀ.  
6.  
ꢃ.  
8.  
9.  
VAB = VDDꢂ Wiper (VW) = no connect.  
INL and DNL are measured at VW with the RDAC configured as a potentiometer divider similar to a voltage output D/A converter. VA=VDD and VB=± V.  
Resistor terminals Aꢂ Bꢂ W have no limitations on polarity with respect to each other.  
Guaranteed by design and not subject to production test.  
P
DISS is calculated from (IDD × VDD+ ISS × VSS) CMOS logic level inputs result in minimum power dissipation.  
All dynamic characteristics use VDD / VSS = ±ꢀ V.  
See timing diagram for location of measured values. All input control voltages are specified with tR = tF = 2 ns (1±ꢁ to 9±ꢁ of 3 V) and timed from a voltage level  
of 1.ꢀ V.  
Rev. Pr C | Page 4 of 11  
-reꢄsmsꢂary Techꢂscaꢄ ꢃata  
Aꢃ1ꢀ90  
ABSOLUTE MAXIMUM RATINGS±  
(TA = +25°C, unless otherwise noted.)  
Table 3.  
Storage Temperature  
–6ꢀ°C to +1ꢀ±°C  
Lead Temperature (Solderingꢂ 1± – 3± sec) 24ꢀ°C  
Thermal Resistance2 θJA: MSOP-1±  
23±°C/W  
Parameter  
Value  
NOTES  
1 Maximum terminal current is bounded by the maximum current handling  
of the switchesꢂ maximum power dissipation of the packageꢂ and maximum  
applied voltage across any two of the Aꢂ Bꢂ and W terminals at a given  
resistance.  
VDD to VSS  
–±.3 V to +33 V  
–±.3 V to +33 V  
+±.3 V to –16.ꢀ V  
VSS ꢂ VDD  
VDD to GND  
VSS to GND  
2 Package power dissipation = (TJMAX – TA)/θJA  
.
VAꢂ VBꢂ VW to GND  
Maximum Current  
Stresses above those listed under Absolute Maximum Ratings  
may cause permanent damage to the device. This is a stress  
rating only and functional operation of the device at these or  
any other conditions above those indicated in the operational  
section of this specification is not implied. Exposure to  
absolute maximum rating conditions for extended periods  
may affect device reliability.  
I
I
WBꢂ IWA Pulsed  
WB Continuous (RWB ≤ 1 kΩꢂ A open)1  
±2± mA  
±ꢀ mA  
IWA Continuous (RWA ≤ 1 kΩꢂ B open)1  
Digital Inputs Voltage to GND  
Digital Output Voltage to GND  
Operating Temperature Range  
±ꢀ mA  
VDD + ±.3 V  
± Vꢂ +3± V  
–4±°C to +1±ꢀ°C  
1ꢀ±°C  
Maximum Junction Temperature (TJMAX  
)
Rev. Pr C | Page ꢀ of 11  
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Aꢃ1ꢀ90  
-IN CONFIGURATION ANꢃ FUNCTION ꢃESCRI-TIONS  
1
2
3
4
5
10  
A
W
VDD  
9
B
AD5290  
TOP VIEW  
8
VSS  
SDO  
SDI  
GND  
CS  
7
CLK  
6
Figure 2. AD5290 Pin Configuration  
Table 7. AD5290 Pin Function Descriptions  
Pin  
Menmonic  
Description  
1
A
A Terminal. VSS VA VDD  
2
B
B Terminal. VSS VB VDD  
3
4
VSS  
Negative Supply. Connect to zero volts for single supply applications.  
GND  
CS  
Digital Ground.  
CS  
Chip Select Inputꢂ Active Low. When returns highꢂ data will be loaded into the Wiper  
Register  
6
8
CLK  
SDI  
Serial Clock Input. Positive edge triggered  
Serial Data Input Pin. Shifts in one bit at a time on positive clock CLK edges. MSB loaded first.  
SDO  
Serial Data Output Pin. Internal N-Ch FET with open-drain output that requires external pull-  
up resistor. It shifts out the previous 8 SDI bits that allows daisy-chain operation of multiple  
packages  
9
VDD  
W
Positive Power Supply  
1±  
W Terminal. VSS VW VDD  
Rev. Pr C | Page 6 of 11  
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Aꢃ1ꢀ90  
S-I Iꢂterface  
1
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
SDI  
CLK  
CS  
0
1
Table 4. AD5290 Serial Data-Word Format  
0
1
B7  
Dꢃ  
MSB  
2ꢃ  
B6 B5 B4 B3 B2 B1 B0  
RDAC REGISTER LOAD  
0
1
0
D6 Dꢀ D4 D3 D2 D1 D±  
LSB  
2±  
VOUT  
Figure 3. AD5290 SPI Interface Timing Diagram  
(VA = VDD, VB = 0 V, VW = VOUT  
)
1
SDI  
(DATA IN)  
0
Dx  
Dx  
tDS  
tCH  
tCS1  
tCH  
1
CLK  
0
tCSH1  
tCL  
tCSHO  
tCSS  
1
CS  
tCSW  
tS  
0
VDD  
VOUT  
±1LSB  
0
Figure 2. SPI Interface Detailed Timing Diagram (VA = VDD, VB = 0 V, VW = VOUT  
)
Rev. Pr C | Page ꢃ of 11  
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O-ERATION  
Aꢃ1ꢀ90  
The AD5290 is a 256-position digitally controlled variable  
resistor device that can be controlled digitally through SPI  
interface.  
Since a finite wiper resistance of 60 Ω is present in the zero-  
scale condition, care should be taken to limit the current flow  
between W and B in this state to a maximum pulse current of  
no more than 20 mA. Otherwise, degradation or possible  
destruction of the internal switch contact can occur.  
An internal power-on preset places the wiper at midscale  
during power-on, which simplifies the fault condition recovery  
at power-up.  
Similar to the mechanical potentiometer, the resistance of the  
RDAC between the wiper W and terminal A also produces a  
complementary resistance RWA. When these terminals are used,  
the B terminal can be opened or shorted to W. Setting the  
resistance value for RWA starts at a maximum value of resistance  
and decreases as the data loaded in the latch increases in value.  
The general equation for this operation is  
DETERMINING THE VARIABLE RESISTANCE  
AND VOLTAGE  
Rheostat Mode Operation  
If only the W-to-B or W-to-A terminals are used as variable  
resistors, the unused terminal can be opened or shorted with W.  
This operation is called rheostat mode (Figure 3).  
256 D  
256  
(2)  
RWA (D) =  
×RAB + RW  
A
A
A
W
W
W
Table 2. RWA vs. Codes; RAB =10 kΩ and  
B Terminal Is Opened  
B
B
B
D (Dec)  
RWA (Ω)  
Output State  
Full-Scale  
Midscale  
1 LSB  
Figure 3. Rheostat Mode Configuration  
2ꢀꢀ  
128  
1
6±  
ꢀ±6±  
1±±2±  
1±±6±  
The nominal resistance (RAB) of the RDAC has 256 contact  
points accessed by the wiper terminal, plus the B terminal  
contact if RWB is considered. The 8-bit data in the RDAC latch is  
decoded to select one of the 256 settings. Assuming that a ±0  
kΩ part is used, the wipers first connection starts at the B  
terminal for data 0x00. Such connection yields a minimum of  
60 Ω resistance between terminals W and B because of the 60 Ω  
wiper contact resistance. The second connection is the first tap  
point, which corresponds to 99 Ω (RWB = (±) × RAB/256 + RW)  
for data 0x0±, and so on. Each LSB data value increase moves  
the wiper up the resistor ladder until the last tap point is reached  
at ±0020 Ω ((255) × RAB/256 + RW). Figure 6 shows a simplified  
diagram of the equivalent RDAC circuit. The general equation  
determining RWB is  
±
Zero-Scale  
The typical distribution of the resistance tolerance from device  
to device is process lot dependent, and it is possible to have  
±30ꢀ tolerance.  
A
RS  
D7  
D6  
D5  
RS  
D4  
D3  
D2  
D1  
RS  
D
D0  
W
RWB (D) =  
× RAB + RW  
(±)  
256  
RDAC  
RW  
where:  
LATCH  
RS  
AND  
B
D is the decimal equivalent of the 8-bit binary code.  
DECODER  
R
R
AB is the end-to-end resistance.  
W is the wiper resistance contributed by the on-resistance of  
Figure 6. AD5290 Equivalent RDAC Circuit  
the internal switch.  
Table 1. RWB vs. Codes; RAB = 10 kΩ and  
the A Terminal Is Opened  
Potentiometer Mode Operation  
If all three terminals are used, the operation is called the  
potentiometer mode. The most common configuration is the  
voltage divider operation (Figure 7).  
D (Dec)  
RWB (Ω)  
1±±2±  
ꢀ±6±  
99  
Output State  
2ꢀꢀ  
128  
1
Full-Scale (RAB + RW)  
Midscale  
1 LSB  
±
6±  
Zero-Scale (Wiper Contact Resistance)  
Rev. Pr C | Page 8 of 11  
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Aꢃ1ꢀ90  
The data setup and data hold times in the specification table  
determine the valid timing requirements. The AD5290 uses an  
8-bit serial input data register word that is transferred to the  
V
I
A
B
CS  
internal RDAC register when the  
returns to logic high. If  
W
V
O
dataword contains more than 8-bit, the extra MSB bits will be  
ignored.  
Figure 7. Potentiometer Mode Configuration  
Ignoring the effect of the wiper resistance, the transfer function  
is simply  
ESD PROTECTION  
All digital inputs are protected with a series input resistor and  
parallel Zener ESD structures shown in 8 and Figure 9. This  
applies to the digital input pins SDI, CLK, and  
D
VW (D) =  
VA  
(3)  
CS  
.
256  
340Ω  
LOGIC  
A more accurate calculation, which includes the wiper  
resistance effect, yields  
V
SS  
D
Figure 8. ESD Protection of Digital Pins  
RAB + RW  
256  
RAB + 2RW  
(4)  
VW (D) =  
VA  
A,B,W  
If there is an applied voltage at the B terminal, then the transfer  
function becomes  
V
SS  
Figure 9. ESD Protection of Resistor Terminals  
D
256  
256 D  
256  
VW (D) =  
VA  
+
VB  
(5)  
TERMINAL VOLTAGE OPERATING RANGE  
Unlike in rheostat mode operation where the absolute tolerance  
is high, potentiometer mode operation yields an almost ratio-  
metric function of D/256 with a relatively small error contributed  
by the RW terms, and therefore the tolerance effect is almost  
cancelled. Although the thin film step resistor RS and CMOS  
switches resistance RW have very different temperature coeffi-  
cients, the ratiometric adjustment also reduces the overall  
temperature coefficient effect to 5 ppm/°C, except at low value  
codes where RW dominates.  
The AD5290 VDD and GND power supply defines the boundary  
conditions for proper 3-terminal digital potentiometer  
operation. Supply signals present on terminals A, B, and W that  
exceed VDD or GND will be clamped by the internal forward  
biased diodes (see Figure ±0).  
V
DD  
A
W
B
Potentiometer mode operations include others such as op amp  
input, feedback resistor networks, and other voltage scaling  
applications. A, W, and B terminals can in fact be input or  
output terminals provided that |VA|, |VW|, and |VB| do not  
exceed |VDD| and |VSS|.  
V
SS  
Figure 10. Maximum Terminal Voltages Set by VDD and VSS  
SPI COMPATIBLE 3-WIRE SERIAL BUS  
The AD5290 contains a 3-wire SPI compatible digital interface  
POWER-UP SEQUENCE  
CS  
(SDI, , and CLK). The 8-bit serial word must be loaded MSB  
Since the ESD protection diodes limit the voltage compliance at  
terminals A, B, and W (see Figure ±0), it is important to power  
VDD–to-GND and VSS-to-GND before applying any voltage to  
terminals A, B, and W; otherwise, the diode will be forward  
biased such that VDD will be powered unintentionally and may  
affect the rest of the users circuit. The ideal power-up sequence  
is in the following order: GND, VSS,VDD, digital inputs, and then  
first. The format of the word is shown in Table .  
The positive-edge sensitive CLK input requires clean transitions  
to avoid clocking incorrect data into the serial input register.  
CS  
Standard logic families work well.  
should start high, when it  
goes low, the clock loads data into the serial register on each  
positive clock edge (see Figure 3).  
Rev. Pr C | Page 9 of 11  
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Aꢃ1ꢀ90  
VA/B/W. The relative order of powering VA, VB, VW, and the  
digital inputs is not important as long as they are powered after  
VDD and VSS with respect to GND.  
m
V
DD  
AD5290  
U1  
AD5290  
U2  
SDO  
LAYOUT AND POWER SUPPLY BYPASSING  
R
p
2.2K  
It is a good practice to employ compact, minimum lead length  
layout design. The leads to the inputs should be as direct as  
possible with a minimum conductor length. Ground paths  
should have low resistance and low inductance.  
uC  
MOSI  
SDI  
SDO  
SDI  
SCLK SS  
CS  
CLK  
CS  
CLK  
Similarly, it is also a good practice to bypass the power supplies  
with quality capacitors for optimum stability. Supply leads to  
the device should be bypassed with disc or chip ceramic  
capacitors of 0.0± µF to 0.± µF. Low ESR ± µF to ±0 µF tantalum  
or electrolytic capacitors should also be applied at the supplies  
to minimize any transient disturbance and low frequency ripple  
(see Figure 4). Note that the digital ground should also be  
joined remotely to the analog ground at one point to minimize  
the ground bounce.  
Figure 12. Daisy Chain Configuration  
AD5290  
Figure 4. Power Supply Bypassing  
DAISY CHAIN OPERATION  
The serial data output pin (SDO) can be used to daisy chain  
multiple devices for simultaneous operations, see Figure ±2. The  
SDO pin contains an open drain N-Ch FET and requires a pull-  
up resistor. Users need to tie the SDO pin of one package to the  
SDI pin of the next package. If many devices are daisy-chained,  
users may need to increase the clock period to accommodate  
the time delay introduced by the pull-up resistors and the  
capacitive loading at the SDO-SDI interface, see Figure ±2.  
If two AD5290 are daisy chained, this requires total ±6 bits of  
data. The first 8 bits goes to U2 and the second 8 bits goes to  
CS  
U±. The  
should be kept low until all ±6 bits are clocked into  
CS  
their respective serial registers. The  
complete the operation.  
is then pulled high to  
Rev. Pr C | Page 1± of 11  
-reꢄsmsꢂary Techꢂscaꢄ ꢃata  
OUTLINE ꢃIMENSIONS  
Aꢃ1ꢀ90  
3.00 BSC  
10  
6
4.90 BSC  
3.00 BSC  
PIN 1  
1
5
0.50 BSC  
0.95  
0.85  
0.75  
1.10 MAX  
0.80  
0.60  
0.40  
8°  
0°  
0.15  
0.00  
0.27  
0.17  
SEATING  
PLANE  
0.23  
0.08  
COPLANARITY  
0.10  
COMPLIANT TO JEDEC STANDARDS MO-187BA  
Figure 5. 10-Lead Mini Small Outline Package [MSOP]  
(RM-10)  
Dimensions shown in millimeters  
Ordering Guide  
Model1  
RAB (kΩ)  
1±  
1±  
ꢀ±  
ꢀ±  
Temperature Range  
–4±°C to +1±ꢀ°C  
–4±°C to +1±ꢀ°C  
–4±°C to +1±ꢀ°C  
–4±°C to +1±ꢀ°C  
–4±°C to +1±ꢀ°C  
–4±°C to +1±ꢀ°C  
Package Description  
MSOP-1±  
MSOP-1±  
MSOP-1±  
MSOP-1±  
Package Option  
RM-1±  
RM-1±  
RM-1±  
RM-1±  
Branding  
D4U  
D4U  
D4T  
D4T  
ADꢀ29±YRMZ1±  
ADꢀ29±YRMZ1±-RLꢃ  
ADꢀ29±YRMZꢀ±  
ADꢀ29±YRMZꢀ±-RLꢃ  
ADꢀ29±YRMZ1±±  
ADꢀ29±YRMZ1±±-RLꢃ  
1±±  
1±±  
MSOP-1±  
MSOP-1±  
RM-1±  
RM-1±  
D4V  
D4V  
ADꢀ29±EVAL  
Evaluation Board  
NOTES:  
1. Z in Model Number denotes Lead Free Package  
Purchase of licensed I2C components of Analog Devices or one of its sublicensed Associated Companies conveys a license for the purchaser under the Philips I2C Patent  
Rights to use these components in an I2C systemꢂ provided that the system conforms to the I2C Standard Specification as defined by Philips.  
ESD CAUTION  
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4±±± V readily accumulate on the  
human body and test equipment and can discharge without detection. Although this product features  
proprietary ESD protection circuitryꢂ permanent damage may occur on devices subjected to high energy  
electrostatic discharges. Thereforeꢂ proper ESD precautions are recommended to avoid performance  
degradation or loss of functionality.  
Rev. Pr C | Page 11 of 11  

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