5962R9863602VPX [ADI]

IC OP-AMP, 2500 uV OFFSET-MAX, CDIP8, CERAMIC, DIP-8, Operational Amplifier;
5962R9863602VPX
型号: 5962R9863602VPX
厂家: ADI    ADI
描述:

IC OP-AMP, 2500 uV OFFSET-MAX, CDIP8, CERAMIC, DIP-8, Operational Amplifier

放大器 CD
文件: 总13页 (文件大小:76K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
REVISIONS  
LTR  
A
DESCRIPTION  
Make change to input offset current test as specified in table I. - ro  
DATE (YR-MO-DA)  
99-10-25  
APPROVED  
R. MONNIN  
REV  
SHEET  
REV  
SHEET  
REV STATUS  
OF SHEETS  
REV  
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
A
A
SHEET  
10  
11  
12  
PMIC N/A  
PREPARED BY  
RICK OFFICER  
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43216  
CHECKED BY  
RAJESH PITHADIA  
STANDARD  
MICROCIRCUIT  
DRAWING  
APPROVED BY  
RAYMOND MONNIN  
MICROCIRCUIT, LINEAR, RADIATION HARDENED  
JFET-INPUT OPERATIONAL  
THIS DRAWING IS AVAILABLE  
FOR USE BY ALL  
DEPARTMENTS  
AND AGENCIES OF THE  
DEPARTMENT OF DEFENSE  
AMPLIFIER, MONOLITHIC SILICON  
DRAWING APPROVAL DATE  
98-10-08  
AMSC N/A  
REVISION LEVEL  
A
SIZE  
A
CAGE CODE  
5962-98636  
67268  
SHEET  
1
OF  
12  
DSCC FORM 2233  
APR 97  
5962-E022-00  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  
1. SCOPE  
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)  
and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or  
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.  
1.2 PIN. The PIN is as shown in the following example:  
5962  
R
98636  
01  
V
G
X
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
Federal  
stock class  
designator  
\
RHA  
designator  
(see 1.2.1)  
Device  
type  
(see 1.2.2)  
Device  
class  
designator  
(see 1.2.3)  
Case  
outline  
(see 1.2.4)  
Lead  
finish  
(see 1.2.5)  
/
\/  
Drawing number  
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are  
marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A  
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.  
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:  
Device type  
Generic number  
PM155A  
Circuit function  
01  
02  
Radiation hardened JFET input  
operational amplifier  
Radiation hardened JFET input  
operational amplifier  
PM156A  
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows:  
Device class  
M
Device requirements documentation  
Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN  
class level B microcircuits in accordance with MIL-PRF-38535, appendix A  
Q or V  
Certification and qualification to MIL-PRF-38535  
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:  
Outline letter  
Descriptive designator  
Terminals  
Package style  
G
P
MACY1-X8  
GDIP1-T8 or CDIP2-T8  
8
8
Can  
Dual-in-line  
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,  
appendix A for device class M.  
SIZE  
STANDARD  
MICROCIRCUIT DRAWING  
5962-98636  
A
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43216-5000  
REVISION LEVEL  
SHEET  
A
2
DSCC FORM 2234  
APR 97  
1.3 Absolute maximum ratings. 1/  
Supply voltage range (±VS).....................................................±22 V  
Input voltage range (VIN) .........................................................±20 V 2/  
Differential input voltage range................................................±40 V  
Power dissipation (PD).............................................................670 mW  
Output short circuit duration....................................................Unlimited 3/  
Junction temperature (TJ) .......................................................175°C 4/  
Storage temperature range.....................................................-65°C to +150°C  
Lead temperature (soldering, 60 seconds).............................300°C  
Thermal resistance, junction-to-case (qJC)..............................See MIL-STD-1835  
Thermal resistance, junction-to-ambient (qJA):  
Case G.................................................................................150°C/W  
Case P .................................................................................120°C/W  
1.4 Recommended operating conditions.  
Supply voltage range (±VS).....................................................±5 V dc to 20 V dc  
Ambient temperature range (TA).............................................-55°C to +125°C  
1.5 Radiation features.  
Total dose................................................................................£ 100 Krads  
2. APPLICABLE DOCUMENTS  
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of  
this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue  
of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation.  
SPECIFICATION  
DEPARTMENT OF DEFENSE  
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.  
STANDARDS  
DEPARTMENT OF DEFENSE  
MIL-STD-883  
MIL-STD-973  
-
-
Test Method Standard Microcircuits.  
Configuration Management.  
MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines.  
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the  
maximum levels may degrade performance and affect reliability.  
2/ The absolute maximum negative input voltage is equal to the negative power supply voltage.  
3/ Short circuit may be to ground or either supply. Rating applies to +125°C case temperature or +75°C ambient temperature.  
4/ For short term test (in the specific burn-in and life test configuration when required and up to 168°C hours maximum),  
TJ = 275°C.  
SIZE  
STANDARD  
MICROCIRCUIT DRAWING  
5962-98636  
A
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43216-5000  
REVISION LEVEL  
SHEET  
A
3
DSCC FORM 2234  
APR 97  
HANDBOOKS  
DEPARTMENT OF DEFENSE  
MIL-HDBK-103 - List of Standard Microcircuit Drawings (SMD's).  
MIL-HDBK-780 - Standard Microcircuit Drawings.  
(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization  
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)  
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of  
this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific  
exemption has been obtained.  
3. REQUIREMENTS  
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with  
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The  
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device  
class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein.  
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in  
MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.  
3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein.  
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.  
3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 2.  
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical  
performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient  
operating temperature range.  
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests  
for each subgroup are defined in table I.  
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked  
as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the  
manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator  
shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M  
shall be in accordance with MIL-PRF-38535, appendix A.  
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in  
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.  
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed  
manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of  
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see  
6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing  
shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or  
for device class M, the requirements of MIL-PRF-38535, appendix A and herein.  
SIZE  
STANDARD  
MICROCIRCUIT DRAWING  
5962-98636  
A
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43216-5000  
REVISION LEVEL  
SHEET  
A
4
DSCC FORM 2234  
APR 97  
TABLE I. Electrical performance characteristics.  
Conditions  
-55°C £ TA £ +125°C  
unless otherwise specified  
Group A  
subgroups  
Device  
type  
Limits  
Max  
Unit  
Test  
Symbol  
VIO  
Min  
-2  
Input offset voltage  
1
All  
2
mV  
±VS = ±5 V, VCM = 0 V  
2,3  
-2.5  
2.5  
±VS = ±20 V,  
VCM = ±15 V , 0 V  
M,D,P,L,R 1/  
1
-2  
2
Input offset voltage 2/  
temperature sensitivity  
1,2,3  
All  
All  
-10  
10  
DVIO  
DT  
/
±VS = ±20 V, VCM = 0 V  
±VS = ±20 V, VCM = 0 V  
mV/°C  
Input offset 3/ 4/ 5/  
current  
IIO  
1
2,3  
1
-20  
-20  
20  
20  
pA  
nA  
M,D,P,L,R 1/  
-0.3  
-100  
-10  
0.3  
3500  
60  
Input bias 3/ 4/ 5/  
current  
+IIB ,  
-IIB  
1
All  
pA  
nA  
nA  
pA  
nA  
pA  
nA  
±VS = ±20 V,  
2
VCM = +15 V, t £ 25 ms  
M,D,P,L,R 1/  
1
-3.0  
-100  
-10  
3.0  
300  
60  
1
±VS = ±15 V,  
2
VCM = +10 V, t £ 25 ms  
±VS = ±20 V,  
1
-100  
-10  
100  
50  
-15 V < VCM < 0 V,  
t £ 25 ms  
2
Adjustment for input 2/  
offset voltage  
+VIO  
ADJ,  
-VIO  
1,2,3  
All  
+8  
-8  
mV  
±VS = ±20 V  
ADJ  
VOP  
Output voltage swing 2/  
(maximum)  
1,2,3  
1,2,3  
All  
All  
V
±VS = ±20 V, RL = 10 kW  
±VS = ±20 V, RL = 2 kW  
±16  
±15  
-50  
Output short circuit 2/ 6/  
current  
+IOS  
-IOS  
mA  
±VS = ±15 V, t £ 25 ms,  
short circuit to ground  
50  
See footnotes at end of table.  
SIZE  
STANDARD  
MICROCIRCUIT DRAWING  
5962-98636  
A
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43216-5000  
REVISION LEVEL  
SHEET  
A
5
DSCC FORM 2234  
APR 97  
TABLE I. Electrical performance characteristics - Continued.  
Conditions  
-55°C £ TA £ +125°C  
unless otherwise specified  
Group A  
subgroups  
Device  
type  
Limits  
Max  
Unit  
Test  
Symbol  
Min  
Supply current  
IS  
1,2  
3
01  
02  
01  
02  
01  
02  
All  
4
mA  
±VS = ±15 V  
7
6
11  
4
M,D,P,L,R 1/  
1
7
Open loop voltage 7/  
gain (single ended)  
4
50  
25  
V/mV  
V/mV  
±AVS  
±VS = ±20 V, RL = 2 kW  
VOUT = ±15 V  
5,6  
M,D,P,L,R 1/  
VS = ±5 V, RL = 2 kW,  
VOUT = ±2 V  
4
50  
10  
Open loop voltage 2/ 7/  
gain (single ended)  
AVS  
4,5,6  
All  
Noise (referred to input) 2/  
broadband  
NI(BB)  
NI(PC)  
±SR  
4
4
4
All  
All  
10  
40  
±VS = 20V,  
mVrms  
mVPK  
V/ms  
bandwidth = 5 kHz  
Noise (referred to input) 2/  
popcorn  
±VS = 20 V,  
bandwidth = 5 kHz  
Slew rate 2/  
01  
02  
01  
02  
All  
3
10  
1.5  
7
±VS = ±15 V, VIN = ±5 V,  
AV = 1  
5,6  
Power supply rejection 2/  
ratio  
+PSRR  
-PSRR  
CMR  
+VS = 10 V, -VS = -20 V  
+VS = 20 V, -VS = -10 V  
±VS = ±20 V, VIN = ±15 V  
4,5,6  
4,5,6  
85  
85  
85  
dB  
dB  
Input voltage common 2/ 8/  
mode rejection  
All  
See footnotes at end of table.  
SIZE  
STANDARD  
MICROCIRCUIT DRAWING  
5962-98636  
A
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43216-5000  
REVISION LEVEL  
SHEET  
A
6
DSCC FORM 2234  
APR 97  
TABLE I. Electrical performance characteristics - Continued.  
Conditions  
-55°C £ TA £ +125°C  
unless otherwise specified  
Group A  
subgroups  
Device  
type  
Limits  
Max  
Unit  
Test  
Symbol  
Min  
Transient response 2/  
rise time  
TR(tr)  
9,10,11  
01  
150  
ns  
±VS = ±15 V, RL = 2 kW,  
CL = 100 pF, VIN = 50 mV,  
AV = 1  
02  
100  
40  
Transient response 2/  
overshoot  
TR(os)  
9,10,11  
9
01,02  
%
±VS = ±15 V, RL = 2 kW,  
CL = 100 pF, VIN = 50 mV,  
AV = 1  
Settling time 2/  
+ts,  
-ts  
All  
1500  
ns  
±VS = ±15 V, 0.1 % error,  
AV = -1  
1/ Devices supplied to this drawing have been characterized through all levels M, D, P, L, and R of irradiation. However,  
this device is only tested at the "R" level. Pre and Post irradiation values are identical unless otherwise specified  
in table I. When performing post irradiation electrical measurements for any RHA level, TA = +25°C. ±VS = ±15 V.  
2/ This parameter is not tested to post irradiation.  
3/ Bias and offset currents are actually junction leakage currents which double (approximately) for each 10°C increase in  
junction temperature (TJ). Measurement of bias and offset current is specified at TJ rather than TA, since normal warmup  
thermal transients will affect the bias and offset currents. The measurements for bias currents must be made within  
25 ms or 5 loop time constants which ever is greater, after power is first applied to the device for test. Measurement at  
TA = -55°C is not necessary since expected values are too small for typical test systems.  
4/ Bias current is sensitive to power supply voltage, common mode voltage and temperature.  
5/ Negative IIB minimum limits reflect the characteristics of devices with bias current compensation.  
6/ Continuous limits shall be considerably lower. Protection for shorts to either supply exists providing  
that TJ(maximum) £ 175°C.  
7/ Because of thermal feedback effects from output to input, open loop gain is not guaranteed to be linear or positive over  
the operating range. These requirements, if needed, should be specified by the user in additional procurement  
documents.  
8/ CMR is calculated from VIO measurements at VCM = +15 V and -15 V.  
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for  
device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.  
3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein)  
involving devices acquired to this drawing is required for any change as defined in MIL-STD-973.  
3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain the  
option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made available  
onshore at the option of the reviewer.  
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in  
microcircuit group number 61 (see MIL-PRF-38535, appendix A).  
SIZE  
STANDARD  
MICROCIRCUIT DRAWING  
5962-98636  
A
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43216-5000  
REVISION LEVEL  
SHEET  
A
7
DSCC FORM 2234  
APR 97  
Device types  
Case outlines  
Terminal number  
All  
G and P  
Terminal symbol  
BALANCE  
-INPUT  
+INPUT  
-VS  
1
2
3
4
5
6
7
8
BALANCE  
OUTPUT  
+VS  
NC  
NC = No connection  
FIGURE 1. Terminal connections.  
SIZE  
STANDARD  
MICROCIRCUIT DRAWING  
5962-98636  
A
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43216-5000  
REVISION LEVEL  
SHEET  
A
8
DSCC FORM 2234  
APR 97  
FIGURE 2. Radiation exposure circuit.  
SIZE  
STANDARD  
MICROCIRCUIT DRAWING  
5962-98636  
A
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43216-5000  
REVISION LEVEL  
SHEET  
A
9
DSCC FORM 2234  
APR 97  
4. QUALITY ASSURANCE PROVISIONS  
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-  
PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not  
affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance  
with MIL-PRF-38535, appendix A.  
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on  
all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with  
method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.  
4.2.1 Additional criteria for device class M.  
a. Burn-in test, method 1015 of MIL-STD-883.  
(1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level  
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify  
the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test  
method 1015.  
(2) TA = +125°C, minimum.  
b. Interim and final electrical test parameters shall be as specified in table IIA herein.  
4.2.2 Additional criteria for device classes Q and V.  
a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device  
manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document  
revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with  
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall  
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test  
method 1015 of MIL-STD-883.  
b. Interim and final electrical test parameters shall be as specified in table IIA herein.  
c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in  
MIL-PRF-38535, appendix B.  
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in  
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups  
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).  
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with  
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein except where option 2 of  
MIL-PRF-38535 permits alternate in-line control testing. Quality conformance inspection for device class M shall be in accordance  
with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for device class M shall be those specified  
in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).  
4.4.1 Group A inspection.  
a. Tests shall be as specified in table IIA herein.  
b. Subgroups 7 and 8 in table I, method 5005 of MIL-STD-883 shall be omitted.  
SIZE  
STANDARD  
MICROCIRCUIT DRAWING  
5962-98636  
A
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43216-5000  
REVISION LEVEL  
SHEET  
A
10  
DSCC FORM 2234  
APR 97  
TABLE IIA. Electrical test requirements.  
Subgroups  
Test requirements  
Subgroups  
(in accordance with  
MIL-STD-883,  
(in accordance with  
MIL-PRF-38535, table III)  
method 5005, table I)  
Device  
class M  
Device  
class Q  
Device  
class V  
Interim electrical  
1
1
1
parameters (see 4.2)  
Final electrical  
parameters (see 4.2)  
1,2,3,4, 1/  
5,6  
1,2,3,4, 1/  
5,6  
1,2,3,4, 1/ 2/  
5,6  
Group A test  
requirements (see 4.4)  
1,2,3,4,5,6,  
9,10,11  
1
1,2,3,4,5,6,  
9,10,11  
1
1,2,3,4,5,6,  
9,10,11  
Group C end-point electrical  
parameters (see 4.4)  
1,2,3 2/  
Group D end-point electrical  
parameters (see 4.4)  
1
1
1,2,3  
---  
Group E end-point electrical  
parameters (see 4.4)  
---  
---  
1/ PDA applies to subgroup 1.  
2/ See table IIB for delta measurement parameters.  
TABLE IIB. 240 hour burn-in and group C end point electrical parameters. (TA = +25°C)  
Parameter  
Device type  
Limits  
Delta  
Units  
Min  
-2  
-100  
-100  
Max  
2
100  
100  
Min  
-0.5  
-50  
-50  
Max  
+0.5  
+50  
+50  
VIO  
+IIB  
-IIB  
All  
All  
All  
mV  
pA  
pA  
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.  
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:  
a. Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control  
and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs,  
outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-  
STD-883.  
b. TA = +125°C, minimum.  
c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.  
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature, or  
approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The test  
circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with  
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the  
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-  
STD-883.  
SIZE  
STANDARD  
MICROCIRCUIT DRAWING  
5962-98636  
A
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43216-5000  
REVISION LEVEL  
SHEET  
A
11  
DSCC FORM 2234  
APR 97  
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.  
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured  
(see 3.5 herein). RHA levels for device classes M, Q, and V shall be as specified in MIL-I-38535. End-point electrical parameters  
shall be as specified in table IIA herein.  
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883 method  
1019 and as specified herein.  
4.4.4.1.1 Accelerated aging test. Accelerated aging tests shall be performed on all devices requiring a RHA level greater than 5k  
rads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be the pre-irradiation  
end-point electrical parameter limit at 25°C ±5°C. Testing shall be performed at initial qualification and after any design or process  
changes which may affect the RHA response of the device.  
4.4.4.2 Dose rate burnout. When required by the customer test shall be performed on devices, SEC, or approved test structures  
at technology qualifications and after any design or process changes which may effect the RHA capability of the process. Dose rate  
burnout shall be performed in accordance with test method 1023 of MIL-STD-883 and as specified herein.  
5. PACKAGING  
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes Q  
and V or MIL-PRF-38535, appendix A for device class M.  
6. NOTES  
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original  
equipment), design applications, and logistics purposes.  
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor prepared  
specification or drawing.  
6.1.2 Substitutability. Device class Q devices will replace device class M devices.  
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for the  
individual documents. This coordination will be accomplished in accordance with MIL-STD-973 using DD Form 1692, Engineering  
Change Proposal.  
6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus when a system application  
requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users and this list will  
be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC  
5962) should contact DSCC-VA, telephone (614) 692-0525.  
6.4 Comments. Comments on this drawing should be directed to DSCC-VA , Columbus, Ohio 43216-5000, or telephone  
(614) 692-0674.  
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in  
MIL-PRF-38535 and MIL-HDBK-1331.  
6.6 Sources of supply.  
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535. The  
vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have agreed to this  
drawing.  
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103. The  
vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to  
and accepted by DSCC-VA.  
SIZE  
STANDARD  
MICROCIRCUIT DRAWING  
5962-98636  
A
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43216-5000  
REVISION LEVEL  
SHEET  
A
12  
DSCC FORM 2234  
APR 97  
STANDARD MICROCIRCUIT DRAWING BULLETIN  
DATE: 99-10-25  
Approved sources of supply for SMD 5962-98636 are listed below for immediate acquisition information only and shall  
be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised  
to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of  
compliance has been submitted to and accepted by DSCC-VA. This bulletin is superseded by the next dated revision of  
MIL-HDBK-103 and QML-38535.  
Standard  
microcircuit drawing  
PIN 1/  
Vendor  
CAGE  
number  
Vendor  
similar  
PIN 2/  
5962R9863601VGA  
5962R9863601VPA  
5962R9863602VGA  
5962R9863602VPA  
24355  
24355  
24355  
24355  
PM155AJ/QMLR  
PM155AZ/QMLR  
PM156AJ/QMLR  
PM156AZ/QMLR  
1/ The lead finish shown for each PIN representing  
a hermetic package is the most readily available  
from the manufacturer listed for that part. If the  
desired lead finish is not listed, contact the vendor  
to determine its availability.  
2/ Caution. Do not use this number for item  
acquisition. Items acquired to this number may not  
satisfy the performance requirements of this drawing.  
Vendor CAGE  
number  
Vendor name  
and address  
24355  
Analog Devices  
RT 1 Industrial Park  
P.O. Box 9106  
Norwood, MA 02062  
Point of contact: 1500 Space Park Drive  
P.O. Box 58020  
Santa Clara, CA 95050-8020  
The information contained herein is disseminated for convenience only and the  
Government assumes no liability whatsoever for any inaccuracies in the  
information bulletin.  

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