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5STP34H1601

更新时间：2024-09-18 05:28:59
品牌：ABB
描述：Phase Control Thyristor

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5STP34H1601 概述

Phase Control Thyristor 相位控制晶闸管 可控硅整流器

5STP34H1601 规格参数

生命周期：Active包装说明：DISK BUTTON, O-CXDB-X4
Reach Compliance Code：compliantHTS代码：8541.30.00.80
风险等级：5.75配置：SINGLE
最大直流栅极触发电流：250 mAJESD-30 代码：O-CXDB-X4
元件数量：1端子数量：4
最高工作温度：125 °C最低工作温度：-40 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：ROUND
封装形式：DISK BUTTON认证状态：Not Qualified
最大均方根通态电流：5292 A断态重复峰值电压：1600 V
重复峰值反向电压：1600 V表面贴装：YES
端子形式：UNSPECIFIED端子位置：UNSPECIFIED
触发设备类型：SCRBase Number Matches：1

5STP34H1601 数据手册

通过下载5STP34H1601数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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VDRM = 1600  
IT(AV)M = 3370  
IT(RMS) = 5292  
V
A
A
A
V
Phase Control Thyristor  
ITSM  
V(T0)  
rT  
= 49×103  
= 0.94  
5STP 34H1601  
= 0.066  
mW  
Doc. No. 5SYA1065-01 March 05  
·
·
·
Low on-state and switching losses  
Designed for traction, energy and industrial applications  
Optimum power handling capability  
Blocking  
Maximum rated values 1)  
Symbol Conditions  
VDRM, VRRM f = 50 Hz, tp = 10 ms  
5STP 34H1601 5STP 34H1401 5STP 34H1201  
1600 V  
1400 V  
1200 V  
dV/dtcrit  
Exp. to 1070 V, Tvj = 125°C  
1000 V/µs  
Characteristic values  
Parameter  
Symbol Conditions  
IDRM VDRM, Tvj = 125°C  
IRRM VRRM, Tvj = 125°C  
min  
typ  
max  
200  
200  
Unit  
Forward leakage current  
Reverse leakage current  
mA  
mA  
Mechanical data  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
min  
typ  
50  
max  
Unit  
Mounting force  
Acceleration  
FM  
45  
55  
50  
kN  
a
a
Device unclamped  
Device clamped  
m/s2  
m/s2  
Acceleration  
Characteristic values  
Parameter  
100  
Symbol Conditions  
typ  
max  
0.93  
Unit  
Weight  
m
kg  
Surface creepage distance  
Air strike distance  
DS  
Da  
36  
15  
mm  
mm  
1) Maximum rated values indicate limits beyond which damage to the device may occur  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5STP 34H1601  
On-state  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
A
Average on-state current  
RMS on-state current  
IT(AV)M  
IT(RMS)  
ITSM  
Half sine wave, Tc = 70°C  
3370  
5292  
49×103  
A
Peak non-repetitive surge  
current  
tp = 10 ms, Tvj = 125 °C,  
VD = VR = 0 V  
A
Limiting load integral  
I2t  
12.01×106 A2s  
52.3×103  
Peak non-repetitive surge  
current  
ITSM  
tp = 8.3 ms, Tvj = 125 °C,  
VD = VR = 0 V  
A
Limiting load integral  
Characteristic values  
Parameter  
I2t  
11.35×106 A2s  
Symbol Conditions  
min  
typ  
max  
1.2  
Unit  
V
On-state voltage  
Threshold voltage  
Slope resistance  
Holding current  
VT  
V(T0)  
rT  
IT = 4000 A, Tvj = 125 °C  
IT = 4200 A - 12500 A, Tvj= 125 °C  
0.94  
V
0.066  
mW  
mA  
mA  
mA  
mA  
IH  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
170  
90  
Latching current  
IL  
1500  
1000  
Switching  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
Critical rate of rise of on-  
state current  
di/dtcrit  
Tvj = 125 °C,  
Cont.  
200  
A/µs  
ITRM = A,  
f = 50 Hz  
Cont.  
Critical rate of rise of on-  
state current  
di/dtcrit  
1000  
A/µs  
µs  
VD £ 2950 V,  
f = 1 Hz  
IFG = 2 A, tr = 0.3 µs  
Circuit-commutated turn-off tq  
time  
Tvj = 125°C, ITRM = 4000 A,  
VR = 100 V, diT/dt = -12.5 A/µs,  
200  
VD £ 0.67×VDRM, dvD/dt = 50V/µs  
Characteristic values  
Parameter  
Symbol Conditions  
min  
typ  
2800  
max  
Unit  
Recovery charge  
Qrr  
Tvj = 125°C, ITRM = 4000 A,  
VR = 100 V,  
µAs  
diT/dt = -12.5 A/µs  
Gate turn-on delay time  
tgd  
2
µs  
VD = 0.4×VRM, IFG = 2 A,  
tr = 0.3 µs, Tvj = 25 °C  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1065-01 March 05  
page 2 of 6  
5STP 34H1601  
Triggering  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
min  
typ  
typ  
max  
Unit  
Peak forward gate voltage VFGM  
Peak forward gate current IFGM  
Peak reverse gate voltage VRGM  
12  
10  
10  
5
V
A
V
Mean forward gate power  
Characteristic values  
Parameter  
PG(AV)  
W
Symbol Conditions  
max  
Unit  
Gate-trigger voltage  
VGT  
Tvj = -40 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = -40 °C  
Tvj = 25 °C  
Tvj = 125 °C  
4
3
V
0.25  
2
Gate-trigger current  
IGT  
500  
250  
150  
mA  
10  
Thermal  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
Operating junction  
temperature range  
Tvj  
-40  
125  
°C  
Storage temperature range Tstg  
-40  
125  
°C  
Characteristic values  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
Thermal resistance junction Rth(j-c)  
to case  
Double-side cooled  
Fm = 45...55 kN  
10  
K/kW  
Rth(j-c)A Anode-side cooled  
Fm = 45...55 kN  
16  
26.5  
3
K/kW  
K/kW  
K/kW  
K/kW  
Rth(j-c)C Cathode-side cooled  
Fm = 45...55 kN  
Thermal resistance case to Rth(c-h)  
heatsink  
Double-side cooled  
Fm = 45...55 kN  
Rth(c-h)  
Single-side cooled  
Fm = 45...55 kN  
6
Analytical function for transient thermal  
impedance:  
n
-t/ti  
Z
(t) = R (1-e )  
å
th(j-c)  
th i  
i=1  
i
1
2
3
4
Rth i(K/kW)  
6.730  
0.4871  
1.440  
0.1468  
0.650  
0.0677  
1.160  
0.0079  
ti(s)  
Fig. 1 Transient thermal impedance junction-to case.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1065-01 March 05  
page 3 of 6  
5STP 34H1601  
22000  
20000  
18000  
16000  
14000  
12000  
10000  
8000  
6000  
4000  
2000  
0
80  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
18  
25°C  
125°C  
I TSM  
i2dt  
ò
17  
16  
15  
14  
13  
12  
11  
10  
9
8
0
0,5  
1
1,5  
2
2,5  
3
1
10  
100  
t ( ms )  
VT ( V )  
Fig. 2 Max. on-state voltage characteristics  
Fig. 3 Surge forward current vs. pulse length. Half  
sine wave, single pulse, VR = 0 V  
14  
7
VFGM  
12  
6
5
4
3
2
1
0
DC = P GAVm  
500µs  
1ms  
10  
8
-40 °C  
+25 °C  
6
+125 °C  
4
10ms  
DC = P GAVm  
2
VGTmin  
0
0
2
4
6
8
10  
I G ( A )  
12  
0
0,5  
1
I
G ( A )  
Fig. 4 Gate trigger characteristics  
Fig. 5 Gate trigger characteristics  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1065-01 March 05  
page 4 of 6  
5STP 34H1601  
6000  
5000  
4000  
3000  
2000  
1000  
0
6000  
5000  
4000  
3000  
2000  
1000  
0
= 30° 60° 90° 120°  
= 30° 60° 90° 120°  
y
y
180°  
DC  
180°  
270°  
DC  
0
1000  
2000  
3000  
4000  
0
1000  
2000  
3000  
4000  
ITAV ( A )  
ITAV ( A )  
Fig. 6 Forward power loss vs. average forward  
Fig. 7 Forward power loss vs. average forward  
current, sine waveform, f = 50 Hz, T = 1/f  
current, square waveform, f = 50 Hz, T = 1/f  
130  
120  
110  
100  
90  
130  
120  
110  
100  
90  
80  
80  
DC  
DC  
70  
60  
70  
270°  
60°  
= 30°  
90° 120° 180°  
y
= 30° 60° 90° 120°  
180°  
y
60  
0
1000  
2000  
3000  
4000  
ITAV ( A )  
0
1000  
2000  
3000  
4000  
ITAV ( A )  
Fig. 8 Max. case temperature vs.average forward  
Fig. 9 Max. case temperature vs.average forward  
current, sine waveform, f = 50Hz, T = 1/f  
current, square waveform, f = 50Hz, T = 1/f  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1065-01 March 05  
page 5 of 6  
5STP 34H1601  
RED  
WHITE  
Fig. 10 Device Outline Drawing.  
Related application notes:  
Doc. Nr  
Titel  
5SYA2020  
5SYA2034  
5SYA 2036  
Design of RC-Snubber for Phase Control Applications  
Gate-drive Recommendations for PCT's  
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors  
Please refer to http://www.abb.com/semiconductors for actual versions.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA1065-01 March 05  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
Email  
Internet  
abbsem@ch.abb.com  
www.abb.com/semiconductors  

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