5SDA07D3806 [ABB]

Avalanche Rectifier Diode; 雪崩整流二极管


型号：	5SDA07D3806
厂家：	THE ABB GROUP
描述：	Avalanche Rectifier Diode 雪崩整流二极管整流二极管局域网
文件：	总2页 (文件大小：33K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Key Parameters

Avalanche Rectifier Diode

V_RRM

I_FAVM

I_FSM

V_F0

3800 V

790 A

7.6 kA

1.01 V

5SDA 07D3806

r_F

0.72

Doc. No. 5SYA 1123 - 01 Apr-98

Features

· Optimized for line frequency rectifiers

· Low on-state voltage, narrow V_F-bands for parallel operation

· Self protected against transient overvoltages

· Guaranteed maximum avalanche power dissipation

· Industry standard housing

Blocking

Part number

5SDA 07D3806

3800

5SDA 0763206

3200

Condition

V_RRM

= 50 Hz

t_P= 10 ms

T_j= 160°C

V_RSM

4180

3520

t_P= 10 ms

V_RRM

I_RRM

50 mA

P_RSM

70 kW

50 kW

t_P= 20 µs

T_j

45°C

T_j= 160°C

Mechanical data

F_M

Mounting force

min.

10 kN

12 kN

max.

Acceleration

Device unclamped

Device clamped

Weight

50 m/s²

200 m/s²

0.25 kg

D_S

D_a

Surface creepage distance

Air strike distance

30 mm

20.5 mm

ABB Semiconductors AG

5SDA 07D3806

On-state

I_FAVM

I_FRMS

I_FSM

Max. average on-state current

790 A

1240 A

7.6 kA

8.2 kA

Half sine wave, T_C= 85°C

Max. RMS on-state current

Max. peak non-repetitive

surge current

I_F

10 ms

8.3 ms

T_j=

160°C

After surge:

I²t

Limiting load integral

A²s

10 ms

V_D= V_R= 0V

290×10³

280×10³

8.3 ms

V_F0

Threshold voltage

Slope resistance

On-state voltage

1.01 V

800 - 2400 A

T_j=

160°C

25°C

r_F

0.72

V_{F min}

V_{F max}

1.70 V

2.00 V

I_F

1800 A

Thermal

T_j

Storage and operating

-40...160°C

junction temperature range

Thermal resistance

junction to case

R_thJC

80 K/kW Anode side cooled

80 K/kW Cathode side cooled

40 K/kW Double side cooled

16 K/kW Single side cooled

8 K/kW Double side cooled

R_thCH

Thermal resistance case to

heat sink

Analytical function for transient thermal impedance:

F_m=10...12 kN

Double Side Cooling

Z_th

[K/kW]

thJC(t) = R

(1-e^{-t/t i})

i=1

R _(K/kW)

t _i(s)

20.95

0.396

10.57

0.072

7.15

1.33

10^-3

^{5 6 7}10^-2

^{5 6 7}10^-1

^{5 5 6}10⁰

^{5 6 7}10¹

0.009

0.0044

t [s]

For a given case temperature T_cat ambient temperature T_athe

maximum on-state current can be calculated as follows:

-VF0 + (VF0)²+ 4*f²*r

I_FAVM(A)

T _max(°C)

R_thja(K/kW)

P (W)

T_c(°C)

R_thJC(K/kW)

V_F0(V)

T_a(°C)

r_F(W)

FAVM

2*f²*r

f²=

for DC current

J max - T

2.5

3.1

for half-sine wave

for 120°el., sine

for 60° el., sine

where P =

or P =

Rthjc

Rthja

Doc. No. 5SYA 1123 - 01 Apr-98

ABB Semiconductors AG

Fabrikstrasse 3

CH-5600 Switzerland

Telephone +41 (0)62 888 6419

Fax

+41 (0)62 888 6306

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