AP78T10GP-HF [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP78T10GP-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP78T10GP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
100V
14mΩ
68A
▼ Low On-resistance
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
TO-220(P)
D
S
The TO-220 package is widely preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
100
+20
68
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
A
43
A
240
138.8
2
A
PD@TC=25℃
PD@TA=25℃
TSTG
Total Power Dissipation
W
W
℃
℃
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
0.9
62
Rthj-a
Data and specifications subject to change without notice
1
201006071
AP78T10GP-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=30A
VGS=0V, ID=250uA
100
-
-
-
-
14
5
V
mΩ
V
-
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
gfs
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VDS=10V, ID=30A
VDS=80V, VGS=0V
VGS= +20V, VDS=0V
ID=30A
-
-
-
-
-
-
-
-
-
-
-
-
-
-
40
-
-
S
IDSS
IGSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
25
-
+100
Qg
54
15
25
14
60
25
10
86
-
Qgs
Qgd
td(on)
tr
VDS=80V
VGS=10V
-
VDS=50V
-
ID=30A
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=0.5Ω
-
VGS=10V
-
Ciss
Coss
Crss
Rg
Input Capacitance
VGS=0V
2600 4160
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=25V
430
175
1.6
-
-
-
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Reverse Recovery Time2
Test Conditions
IS=30A, VGS=0V
IS=10A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
V
VSD
trr
-
-
-
-
1.3
ns
70
-
-
nC
Qrr
Reverse Recovery Charge
225
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP78T10GP-HF
240
200
160
120
80
120
100
80
60
40
20
0
T C = 25 o
C
10V
8.0V
7.0V
10V
8.0V
7.0V
T
C = 150 o
C
6.0V
V G = 5.0V
6.0V
40
V G = 5.0V
0
0
8
16
24
32
0
4
8
12
16
20
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
1.1
1
2.4
I D =30A
V
G =10V
2.0
1.6
1.2
0.8
0.4
0.9
0.8
-50
0
50
100
150
-50
0
50
100
150
T
, Junction Temperature ( o C)
T j , Junction Temperature ( o C)
j
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
30
20
10
0
1.4
1.2
1
0.8
0.6
0.4
0.2
T j =150 o
C
T j =25 o
C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j ,Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP78T10GP-HF
f=1.0MHz
12
4000
3000
2000
1000
0
I D = 30 A
10
V DS = 50 V
V
DS = 60 V
DS = 80 V
8
6
4
2
0
C iss
V
C oss
C rss
0
20
40
60
80
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
10
1
Duty factor=0.5
Operation in this
area limited by
RDS(ON)
0.2
0.1
0.1
100us
1ms
0.05
PDM
0.02
t
0.01
T
10ms
Duty factor = t/T
Single Pulse
T c =25 o
C
Peak Tj = PDM x Rthjc + TC
100ms
DC
Single Pulse
0.01
1
0.00001
0.0001
0.001
0.01
0.1
1
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGD
QGS
10%
VGS
tr
td(on)
td(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
相关型号：
©2020 ICPDF网 联系我们和版权申明