AP42T03GP [A-POWER]
Simple Drive Requirement Low Gate Charge; 简单的驱动要求低栅极电荷
| 型号： | AP42T03GP |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | Simple Drive Requirement Low Gate Charge |
| 文件： | 总5页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP42T03GP
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
30V
22mΩ
30A
▼ Low Gate Charge
▼ Fast Switching Characteristic
G
S
Description
AdvancedPowerMOSFETsfromAPECprovidethe
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
TO-220(P)
D
S
The TO-220 package is widely preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
30
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
30
V
Continuous Drain Current, VGS @ 10V
ID@Tc=25℃
ID@Tc=100℃
IDM
A
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
18
A
120
27.8
A
PD@Tc=25℃
TSTG
Total Power Dissipation
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
4.5
62
Rthj-a
Data and specifications subject to change without notice
1
200811271
AP42T03GP
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=18A
VGS=0V, ID=250uA
30
-
-
-
-
-
V
22
35
mΩ
mΩ
V
GS=4.5V, ID=14A
-
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=18A
VDS=30V, VGS=0V
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20
-
3
V
gfs
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=125oC) VDS=24V ,VGS=0V
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
1
-
25
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS= +20V
ID=18A
-
+100
8
13
Qgs
Qgd
td(on)
tr
VDS=20V
2.5
4.5
7.5
55
17
5.5
615
150
100
-
VGS=4.5V
VDS=15V
-
-
ID=18A
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=0.83Ω
VGS=0V
-
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
980
VDS=25V
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Reverse Recovery Time2
Test Conditions
Min. Typ. Max. Units
V
VSD
trr
IS=18A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.3
23
17
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. operating area.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP42T03GP
100
80
60
40
20
0
80
60
40
20
0
10V
7.0V
T C =25 o C
T C =150 o C
10V
7.0V
6.0V
5.0V
6.0V
5.0V
V G =4.0V
V G = 4. 0V
0.0
1.0
2.0
3.0
4.0
5.0
0.0
2.0
4.0
6.0
8.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
32
28
24
20
16
12
8
I D =14A
I D =18A
T
C =25 ℃
V
G =10V
1.4
0.8
0.2
Ω
-50
0
50
100
150
2
4
6
8
10
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
16
12
8
1.6
1.2
0.8
0.4
0.0
T j =150 o C
T j =25 o C
4
0
-50
0
50
100
150
0
0.4
0.8
1.2
1.6
T j , Junction Temperature ( o C )
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP42T03GP
f=1.0MHz
1000
800
600
400
200
0
12
I D =18A
9
V
DS =15V
DS =18V
DS =24V
V
C iss
V
6
3
0
C oss
C rss
0
4
8
12
16
1
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
10
1
1
Duty factor = 0.5
0.2
0.1
100us
0.1
0.05
PDM
1ms
10ms
100ms
t
0.02
T
0.01
Duty Factor = t/T
T C =25 o C
Peak Tj = PDM x Rthjc + TC
DC
Single Pulse
Single Pulse
0
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS
VG
90%
QG
4.5V
QGD
QGS
10%
VGS
td(off)
tr
td(on)
tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220
E1
A
E
Millimeters
SYMBOLS
MIN
4.25
0.65
1.15
0.40
1.00
9.70
---
NOM
4.48
0.80
1.38
0.50
1.20
MAX
φ
L1
L5
L2
A
b
4.70
0.90
1.60
0.60
1.40
c1
b1
c
c1
E
10.00 10.40
E1
e
---
11.50
----
D
L4
----
2.54
L
12.70 13.60 14.50
L1
L2
L3
L4
L5
φ
D
2.60
1.00
2.60
2.80
1.40
3.10
3.00
1.80
3.60
b1
L3
14.70 15.50 16.00
6.30
3.50
8.40
6.50
3.70
8.90
6.70
3.90
9.40
L
c
b
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-220
meet Rohs requirement
Part Number
for low voltage MOSFET only
Package Code
42T03GP
LOGO
YWWSSS
Date Code (ywwsss)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
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