AP3R303GMT-HF [A-POWER]
Simple Drive Requirement SO-8 Compatible with Heatsink; 简单的驱动要求SO- 8兼容散热器![AP3R303GMT-HF](http://pdffile.icpdf.com/pdf2/p00210/img/icpdf/AP3R30_1189132_icpdf.jpg)
型号: | AP3R303GMT-HF |
厂家: | ![]() |
描述: | Simple Drive Requirement SO-8 Compatible with Heatsink |
文件: | 总4页 (文件大小:101K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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AP3R303GMT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
30V
3.3mΩ
105A
D
S
▼ SO-8 Compatible with Heatsink
▼ Low On-resistance
▼ RoHS Compliant
G
D
D
Description
D
D
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK 5x6 package is special for DC-DC converters application
and the foot print is compatible with SO-8 with backside heat sink and
lower profile.
S
S
S
G
PMPAK 5x6
Absolute Maximum Ratings
Symbol
Parameter
Rating
30
Units
VDS
VGS
Drain-Source Voltage
V
V
Gate-Source Voltage
+20
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current (Chip)
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
105
A
31
A
25
A
250
A
PD@TC=25℃
PD@TA=25℃
EAS
Total Power Dissipation
56.8
5
W
W
mJ
℃
℃
Total Power Dissipation
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
28.8
-55 to 150
-55 to 150
TSTG
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
2.2
25
Rthj-a
Data & specifications subject to change without notice
1
200810171
AP3R303GMT-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=30A
VGS=0V, ID=250uA
30
-
-
-
-
-
3.3
5
V
mΩ
mΩ
V
GS=4.5V, ID=20A
-
VGS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VDS=VGS, ID=250uA
VDS=10V, ID=20A
VDS=30V, VGS=0V
VGS=+20V
ID=30A
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
60
-
3
-
V
gfs
S
IDSS
IGSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
1
-
+100
21
Qg
13.3
2.5
7.2
8
Qgs
Qgd
td(on)
tr
VDS=15V
VGS=4.5V
VDS=15V
-
-
-
-
ID=1A
5.5
25
17
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=15Ω
Ciss
Coss
Crss
Rg
Input Capacitance
VGS=0V
1400 2240
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=25V
440
170
1.4
-
-
f=1.0MHz
f=1.0MHz
2.1
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=30A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.2
V
35
32
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 60oC/W at steady state.
4.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω , IAS=24A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP3R303GMT-HF
250
200
150
100
50
160
120
80
T C =25 o
C
T C =150 o
C
10V
7.0V
6.0V
5.0V
10V
7.0V
6.0V
5.0V
V G =4.0V
V
G = 4.0 V
40
0
0
0.0
1.0
2.0
3.0
4.0
0.0
2.0
4.0
6.0
8.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1.6
1.2
0.8
0.4
5.2
4.4
3.6
2.8
2
I D =30A
I D =20A
T
C =25 o
C
V
G =10V
Ω
-50
0
50
100
150
2
4
6
8
10
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.2
0.8
0.4
0.0
30
20
10
0
T j =150 o
C
T j =25 o
C
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP3R303GMT-HF
f=1.0MHz
8
2000
1600
1200
800
400
0
I D =30A
6
V
DS =15V
DS =18V
C iss
V
V
DS =24V
4
2
0
C oss
C rss
1
5
9
13
17
21
25
29
0
4
8
12
16
20
24
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
100
10
Duty factor = 0.5
0.2
100us
0.1
0.1
0.05
PDM
1ms
t
T
0.02
Duty factor = t/T
T C =25 o
Single Pulse
C
10ms
100ms
DC
Peak Tj = PDM x Rthjc + Tc
0.01
Single Pulse
1
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
t
td(on) tr
d(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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