AP3987P [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP3987P |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总5页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP3987P
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
BVDSS
RDS(ON)
ID
600V
1Ω
7A
D
S
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
G
Description
AP3987 series are specially designed as main switching devices for universal
90~265VAC off-line AC/DC converter applications. The TO-220 type provide
high blocking voltage to overcome voltage surge and sag in the toughest
power system with the best combination of fast switching,ruggedized design
and cost-effectiveness.
G
TO-220(P)
D
S
The TO-220 package is widely preferred for commercial-industrial applications.
The device is suited for switch mode power supplies, DC-AC converters and
high current high speed switching circuits.
Absolute Maximum Ratings
Symbol
Parameter
Rating
600
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
±30
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
7
A
ID@TC=100℃
4.4
A
IDM
28
A
PD@TC=25℃
Total Power Dissipation
104
W
mJ
℃
℃
EAS
TSTG
TJ
Single Pulse Avalanche Energy2
Storage Temperature Range
Operating Junction Temperature Range
27
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
Unit
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
1.2
62
Rthj-a
Data & specifications subject to change without notice
1
200804181
AP3987P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance3 VGS=10V, ID=5A
VGS=0V, ID=1mA
600
-
-
-
-
V
Ω
V
-
1
4
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
gfs
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
VDS=10V, ID=5A
VDS=480V, VGS=0V
VGS=±30V
ID=7A
-
-
-
-
-
-
-
-
-
-
-
-
-
5
-
-
S
IDSS
IGSS
Qg
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
100
-
±100
55
9
90
-
Qgs
Qgd
td(on)
tr
VDS=480V
VGS=10V
16
15
15
100
32
-
VDD=300V
ID=7A
-
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=10Ω,VGS=10V
RD=43Ω
-
-
Ciss
Coss
Crss
Input Capacitance
VGS=0V
2750 4400
Output Capacitance
Reverse Transfer Capacitance
VDS=25V
160
6
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage3
Reverse Recovery Time3
IS=7A, VGS=0V
IS=7A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.5
V
530
8.6
-
-
ns
uC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1.0mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP3987P
20
16
12
8
12
10
8
T C =25 o
C
10V
7.0V
6.0V
5.0V
T C =150 o
C
10V
7 .0V
6 .0V
5.0V
V G =4.0 V
6
V G =4.0V
4
4
2
0
0
0
8
16
24
32
0
4
8
12
16
20
24
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.2
2.8
2.4
2
1.3
1.2
1.1
1
I D =5A
V
G =10V
1.6
1.2
0.8
0.4
0
0.9
0.8
-50
0
50
100
150
-50
0
50
100
150
T j , Junction Temperature ( o C )
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.4
1.2
1
T j = 150 o
C
T j = 25 o
C
1
0.8
0.6
0.4
0.1
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP3987P
f=1.0MHz
3200
2400
1600
800
0
12
10
8
I D =10A
V DS =480V
C iss
6
4
2
C oss
C rss
25
0
0
20
40
60
80
1
5
9
13
17
21
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
10
1
1
Duty factor=0.5
0.2
0.1
100us
0.1
0.05
PDM
1ms
t
0.02
T
10ms
100ms
DC
0.01
T c =25 o
Single Pulse
C
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.1
0.00001
0.0001
0.001
0.01
0.1
1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGD
QGS
10%
VGS
t
td(on) tr
d(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220
E
A
E1
Millimeters
SYMBOLS
φ
MIN
NOM
4.60
0.88
8.80
0.43
MAX
A
b
4.40
0.76
8.60
0.36
4.80
1.00
9.00
0.50
L5
L1
c1
D
c
E
9.80 10.10 10.40
14.70 15.00 15.30
D1
L4
L5
D1
c1
b1
L
6.20
6.40
5.10 REF.
1.35
6.60
D
L4
1.25
1.17
1.45
1.47
1.32
13.25 13.75 14.25
2.54 REF.
b1
e
L1
φ
E1
2.60
3.71
2.75
3.84
2.89
3.96
L
7.4 REF,
c
b
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-220
Part Number
Package Code
3987P
LOGO
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
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