AP16N50W-HF [A-POWER]
TRANSISTOR POWER, FET, FET General Purpose Power;
| 型号： | AP16N50W-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | TRANSISTOR POWER, FET, FET General Purpose Power |
| 文件： | 总4页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP16N50I-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Low On-resistance
BVDSS
RDS(ON)
ID
500V
0.4Ω
16A
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
G
D
S
TO-220CFM(I)
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
Absolute Maximum Ratings
Symbol
Parameter
Rating
500
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
V
Continuous Drain Current, VGS @ 10V
ID@TC=25℃
ID@TC=100℃
IDM
16
A
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
11
A
60
A
PD@TC=25℃
Total Power Dissipation
52
W
Linear Derating Factor
0.42
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
2.4
65
Rthj-a
Data and specifications subject to change without notice
1
200912163
AP16N50I-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=6.5A
VGS=0V, ID=1mA
500
-
-
-
-
0.4
4
V
Ω
V
-
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
gfs
Forward Transconductance
VDS=10V, ID=8A
VDS=500V, VGS=0V
VGS=+20V
ID=16A
-
-
-
-
-
-
-
-
-
-
-
-
-
8
-
-
S
IDSS
IGSS
Drain-Source Leakage Current
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
25
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
+100
Qg
33
11
9
53
-
Qgs
Qgd
td(on)
tr
VDS=400V
VGS=10V
-
VDD=200V
ID=8A
55
50
141
40
-
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=50Ω,VGS=10V
RD=25Ω
-
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
1950 3120
VDS=15V
630
20
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=16A, VGS=0V
IS=16A, VGS=0V
dI/dt=100A/µs
-
-
-
-
1.3
V
ns
uC
495
10
-
-
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP16N50I-HF
30
20
10
0
16
12
8
T C =25 o C
16V
12V
10V
16V
12V
10V
7.0V
T C =150 o C
7.0V
V G =6.0V
V G =6.0V
4
0
0.0
4.0
8.0
12.0
16.0
20.0
0.0
4.0
8.0
12.0
16.0
20.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
1.1
1
2.8
2.4
2.0
1.6
1.2
0.8
0.4
I D =6.5A
V
G =10V
0.9
0.8
-50
0
50
100
150
-50
0
50
100
150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
1.3
1.1
0.9
0.7
0.5
10
8
T j =25 o C
T j =150 o
C
6
4
2
0
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
T j , Junction Temperature ( o C )
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP16N50I-HF
f=1.0MHz
10000
1000
100
10
12
10
C iss
I D =16A
DS =400V
V
8
6
4
2
0
C oss
C rss
1
1
5
9
13
17
21
25
29
0
10
20
30
40
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
10
1
1
Duty factor = 0.5
0.2
0.1
0.1
100us
0.05
0.02
1ms
10ms
0.01
PDM
0.01
t
Single Pulse
T
100ms
1s
DC
T C =25 o C
0
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.001
0
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGD
QGS
10%
VGS
t
td(on) tr
d(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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